symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 28 40 54 75 r q jl 21 30 w junction and storage temperature range a p d c 3.1 2 -55 to 150 t a =70c i d continuous drain current af maximum units parameter t a =25c t a =70c 30 maximum junction-to-ambient a steady-state 13.7 9.7 60 avalanche current b 20 c/w absolute maximum ratings t a =25c unless otherwise noted v v 12 pulsed drain current b power dissipation t a =25c gate-source voltage drain-source voltage maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w a repetitive avalanche energy l=0.3mh b 60 mj AO4420A 30v n-channel mosfet v ds (v) = 30v i d = 13.7a (v gs = 10v) r ds(on) < 10.5m w (v gs = 10v) r ds(on) < 12m w (v gs = 4.5v) the AO4420A uses advanced trench technology to provide excellent r ds(on) , shoot-through immunity and body diode characteristics. this device is suitable for use as a synchronous switch in pwm applications. soic-8 g d s www.freescale.net.cn 1/4 general description features
symbol min typ max units bv dss 30 v 0.004 1 t j =55c 5 i gss 100 na v gs(th) 0.6 1.1 2 v i d(on) 40 a 8.3 10.5 t j =125c 12.5 15 9.7 12 m w g fs 30 37 s v sd 0.76 1 v i s 5 a dynamic parameters c iss 3656 4050 pf c oss 256 pf c rss 168 pf r g 0.86 1.1 w switching parameters q g (4.5v) 30.5 36 nc q gs 4.6 nc q gd 8.6 nc t d(on) 5.5 9 ns t r 3.4 7 ns t d(off) 49.8 75 ns t f 5.9 11 ns t rr 22.5 28 ns q rr 12.5 16 nc gate source charge gate resistance reverse transfer capacitance v ds =5v, i d =13.7a output capacitance maximum body-diode continuous current v gs =0v, v ds =15v, f=1mhz r ds(on) static drain-source on-resistance m w v gs =4.5v, i d =12.7a v gs =10v, id=13.7a i dss m a gate threshold voltage drain-source breakdown voltage i d =250 m a, v gs =0v zero gate voltage drain current gate-body leakage current v ds =v gs i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs = 12v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions input capacitance i f =13.7a, di/dt=100a/ m s on state drain current forward transconductance diode forward voltage i s =1a,v gs =0v v gs =4.5v, v ds =5v turn-on delaytime v gs =4.5v, v ds =15v, i d =13.7a gate drain charge body diode reverse recovery charge i f =13.7a, di/dt=100a/ m s v gs =0v, v ds =0v, f=1mhz turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.1 w , r gen =3 w turn-off fall time body diode reverse recovery time total gate charge a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. f.the current rating is based on the t 10s thermal resistance rating. rev 1 : nov. 2010 www.freescale.net.cn 2/4 AO4420A 30v n-channel mosfet
typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =2.0v v gs =2.5v 4.5v 10v 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v gs =5v 6 7 8 9 10 11 12 0 5 10 15 20 25 30 i d( a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) v gs =10v v gs =4.5v 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalize on-resistance v gs =4.5v i d =13.7a v gs =10v 0 5 10 15 20 25 30 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c i d =13.7a 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c www.freescale.net.cn 3/4 AO4420A 30v n-channel mosfet
typical electrical and thermal characteristics 0 1 2 3 4 5 0 10 20 30 40 qg (nc) figure 7: gate-charge characteristics v gs (volt s) v ds =15v i d =13.7a 100 1000 10000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf ) c iss c rss c oss 0.1 1 10 100 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note e) i d (a) t j(max) =150c t a =25c r ds(on) limited 10 m s 10ms 1ms 0.1s 1s 10s dc 100 m s 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edence z q q q q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =40c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d www.freescale.net.cn 4/4 AO4420A 30v n-channel mosfet
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