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high speed, dual, 4 a mosfet driver adp3654 rev. 0 information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 781.329.4700 www.analog.com fax: 781.461.3113 ?2010 analog devices, inc. all rights reserved. features industry-standard-compatible pinout high current drive capability precise uvlo comparator with hysteresis 3.3 v-compatible inputs 10 ns typical rise time and fall time at 2.2 nf load matched propagation delays between channels fast propagation delay 4.5 v to 18 v supply voltage parallelable dual outputs rated from ?40c to +125c junction temperature thermally enhanced packages, 8-lead soic_n_ep and 8-lead mini_so_ep applications ac-to-dc switch mode power supplies dc-to-dc power supplies synchronous rectification motor drives general description the adp3654 high current and dual high speed driver is capable of driving two independent n-channel power mosfets. the driver uses the industry-standard footprint but adds high speed switching performance. the wide input voltage range allows the driver to be compatible with both analog and digital pwm controllers. digital power controllers are powered from a low voltage supply, and the driver is powered from a higher voltage supply. the adp3654 driver adds uvlo and hysteresis functions, allowing safe startup and shutdown of the higher voltage supply when used with low voltage digital controllers. the driver is available in thermally enhanced soic_n_ep and mini_so_ep packaging to maximize high frequency and current switching in a small printed circuit board (pcb) area. functional block diagram 7 6 5 adp3654 outa vdd outb 8 nc v dd uvlo 2 3 4 ina pgnd inb 1 nc 09054-001 figure 1.
adp3654 rev. 0 | page 2 of 12 table of contents features .............................................................................................. 1 ? applications....................................................................................... 1 ? general description ......................................................................... 1 ? functional block diagram .............................................................. 1 ? revision history ............................................................................... 2 ? specifications..................................................................................... 3 ? timing diagrams.......................................................................... 3 ? absolute maximum ratings............................................................ 4 ? esd caution.................................................................................. 4 ? pin configuration and function descriptions............................. 5 ? typical performance characteristics ............................................. 6 ? test circuit .........................................................................................8 ? theory of operation .........................................................................9 ? input drive requirements (ina and inb)................................9 ? low-side drivers (outa, outb) .............................................9 ? supply capacitor selection ..........................................................9 ? pcb layout considerations.........................................................9 ? parallel operation ...................................................................... 10 ? thermal considerations............................................................ 10 ? outline dimensions ....................................................................... 12 ? ordering guide .......................................................................... 12 ? revision history 8/10revision 0: initial version
adp3654 rev. 0 | page 3 of 12 specifications v dd = 12 v, t j = ?40c to +125c, unless otherwise noted. 1 table 1. parameter symbol test conditions/comments min typ max unit supply supply voltage range v dd 4.5 18 v supply current i dd no switching 1.2 3 ma uvlo turn-on threshold voltage v uvlo_on v dd rising, t j = 25c, see figure 3 3.8 4.2 4.5 v turn-off threshold voltage v uvlo_off v dd falling, t j = 25c, see figure 3 3.5 3.9 4.3 v hysteresis 0.3 v digital inputs (ina, inb) input voltage high v ih see figure 2 2.0 v input voltage low v il see figure 2 0.8 v input current i in 0 v < v in < v dd ?20 +20 a internal pull-up/pull-down current 6 a outputs (outa, outb) output resistance, unbiased vdd = pgnd 80 k peak source current see figure 14 4 a peak sink current see figure 14 ?4 a switching time outa and outb rise time t rise c load = 2.2 nf, see figure 2 10 25 ns outa and outb fall time t fall c load = 2.2 nf, see figure 2 10 25 ns outa and outb rising propagation delay t d1 c load = 2.2 nf, see figure 2 14 30 ns outa and outb falling propagation delay t d2 c load = 2.2 nf, see figure 2 22 35 ns delay matching between channels 2 ns 1 all limits at temperature extremes guar anteed via correlation using standard st atistical quality control (sqc) methods. timing diagrams ina, inb outa, outb t d1 t rise 10% 90% 10% 90% v ih v il t d2 t fall 09054-002 figure 2. output timing diagram normal operation uvlo mode outputs disabled v dd v uvlo_on v uvlo_off uvlo mode outputs disabled 0 9054-003 figure 3. uvlo function
adp3654 rev. 0 | page 4 of 12 absolute maximum ratings table 2. parameter rating vdd ?0.3 v to +20 v outa, outb dc ?0.3 v to v dd + 0.3 v <200 ns ?2 v to v dd + 0.3 v ina, inb ?0.3 v to v dd + 0.3 v esd human body model (hbm) 3.5 kv field induced charged device model (ficdm) soic_n_ep 1.5 kv mini_so_ep 1.0 kv ja , jedec 4-layer board soic_n_ep 1 59c/w mini_so_ep 1 43c/w junction temperature range ?40c to +150c storage temperature range ?65c to +150c lead temperature soldering (10 sec) 300c vapor phase (60 sec) 215c infrared (15 sec) 260c 1 ja is measured per jedec standards, jesd51-2, jesd51-5, and jesd51-7, as appropriate with the exposed pad soldered to the pcb. stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. esd caution
adp3654 rev. 0 | page 5 of 12 pin configuration and fu nction descriptions nc 1 ina 2 pgnd 3 inb 4 nc 8 outa 7 vdd 6 outb 5 adp3654 top view (not to scale) notes 1. nc = no connect. 2 . the exposed pad of the p ackage is not directly connected to any pin of the package, but it is electrically and thermally connected to the die substrate, which is the ground of the device. it is recommended to have the exposed pad and the pgnd pin connected on the pcb. 09054-004 figure 4. pin configuration table 3. pin function descriptions pin o. neonic description 1 nc no connect. 2 ina input pin for channel a gate driver. 3 pgnd ground. this pin should be closely co nnected to the source of the power mosfet. 4 inb input pin for channel b gate driver. 5 outb output pin for channel b gate driver. 6 vdd power supply voltage. bypass this pin to pgnd with a ~1 f to 5 f ceramic capacitor. 7 outa output pin for channel a gate driver. 8 nc no connect. 9 epad exposed pad. the exposed pad of the package is not dire ctly connected to any pin of the package, but it is electrically and thermally connected to the die substrate, which is the ground of the device. it is recommended to have the exposed pad and the pgnd pin connected on the pcb.
adp3654 rev. 0 | page 6 of 12 typical performance characteristics v dd = 12 v, t j = 25c, unless otherwise noted. 3 4 5 6 7 8 9 ?50 ?30 ?10 10 30 50 70 90 110 130 temperature (c) uvlo (v) v uvlo_on v uvlo_off 09054-005 figure 5. uvlo vs. temperature 0 2 4 6 8 10 12 14 ?50 ?30 ?10 10 30 50 70 90 110 130 temperature (c) t fall t rise time (ns) 0 9054-006 figure 6. rise and fall times vs. temperature 0 10 20 30 40 50 60 ?50 ?30 ?10 10 30 50 70 90 110 130 temperature (c) time (ns) v dd = 12v t d2 t d1 0 9054-007 figure 7. propagation delay vs. temperature 0 5 10 15 20 25 0 5 10 15 20 v dd (v) time (ns) t fall t rise 09054-008 figure 8. rise and fall times vs. v dd 0 10 20 30 40 50 60 70 0 5 10 15 20 t d2 t d1 v dd (v) time (ns) 0 9054-009 figure 9. propagation delay vs. v dd 1 2 outa/outb ina/inb v dd = 12v time = 20ns/div 09054-010 figure 10. typical rise propagation delay
adp3654 rev. 0 | page 7 of 12 1 2 v dd = 12v time = 20ns/div outa/outb ina/inb 09054-011 figure 11. typical fall propagation delay 1 2 v dd = 12v time = 20ns/div outa/outb ina/inb 09054-012 figure 12. typical rise time 1 2 v dd = 12v time = 20ns/div outa/outb ina/inb 09054-013 figure 13. typical fall time
adp3654 rev. 0 | page 8 of 12 test circuit ina vdd v dd pgnd adp3654 outa outb inb nc nc 1 3 8 7 6 5 a b 2 4 c load 100nf ceramic 4.7f ceramic scope probe 0 9054-014 figure 14. test circuit
adp3654 rev. 0 | page 9 of 12 theory of operation the adp3654 dual driver is optimized for driving two independent enhancement n-channel mosfets or insulated gate bipolar transistors (igbts) in high switching frequency applications. these applications require high speed, fast rise and fall times, as well as short propagation delays. the capacitive nature of the aforementioned gated devices requires high peak current capability as well. ina vdd v dd pgnd adp3654 outa outb inb nc nc 1 3 8 7 6 5 a b 2 4 v ds v ds 09054-015 figure 15. typical application circuit input drive requirements (ina and inb) the adp3654 is designed to meet the requirements of modern digital power controllers; the si gnals are compatible with 3.3 v logic levels. at the same time, the input structure allows for input voltages as high as v dd . an internal pull-down resistor is present at the input, which guarantees that the power device is off in the event that the input is left floating. low-side drivers (outa, outb) the adp3654 dual drivers are designed to drive ground referenced n-channel mosfets. the bias is internally connected to the v dd supply and pgnd. when adp3654 is disabled, both low-side gates are held low. internal impedance is present between the outa pin and gnd and between the outb pin and gnd; this feature ensures that the power mosfet is normally off when bias voltage is not present. when interfacing adp3654 to external mosfets, the designer should consider ways to make a robust design that minimizes stresses on both the driver and the mosfets. these stresses include exceeding the short time duration voltage ratings on the outa and outb pins, as well as the external mosfet. power mosfets are usually selected to have a low on resistance to minimize conduction losses, which usually implies a large input gate capacitance and gate charge. supply capacitor selection for the supply input (v dd ) of the adp3654, a local bypass capacitor is recommended to reduce the noise and to supply some of the peak currents that are drawn. an improper decoupling can dramatically increase the rise times because excessive resonance on the outa and outb pins can, in some extreme cases, damage the device, due to inductive overvoltage on the vdd, outa, or outb pin. the minimum capacitance required is determined by the size of the gate capacitances being driven, but as a general rule, a 4.7 f, low esr capacitor should be used. multilayer ceramic chip (mlcc) capacitors provide the best combination of low esr and small size. use a smaller ceramic capacitor (100 nf) with a better high frequency characteristic in parallel to the main capacitor to further reduce noise. keep the ceramic capacitor as close as possible to the adp3654 device and minimize the length of the traces going from the capacitor to the power pins of the device. pcb layout considerations use the following general guidelines when designing pcbs: ? trace out the high current paths and use short, wide (>40 mil) traces to make these connections. ? minimize trace inductance between the outa and outb outputs and mosfet gates. ? connect the pgnd pin of the adp3654 device as closely as possible to the source of the mosfets. ? place the v dd bypass capacitor as close as possible to the vdd and pgnd pins. ? use vias to other layers, when possible, to maximize thermal conduction away from the ic.
adp3654 rev. 0 | page 10 of 12 figure 16 shows an example of the typical layout based on the preceding guidelines. 09054-016 figure 16. external component placement example note that the exposed pad of the package is not directly con- nected to any pin of the package, but it is electrically and thermally connected to the die substrate, which is the ground of the device. parallel operation the two driver channels present in the adp3654 device can be combined to operate in parallel to increase drive capability and minimize power dissipation in the driver. the connection scheme is shown in figure 17 . in this configura- tion, ina and inb are connected together, and outa and outb are connected together. particular attention must be paid to the layout in this case to optimize load sharing between the two drivers. ina vdd v dd pgnd adp3654 outa outb inb nc nc 1 3 8 7 6 5 a b 2 4 v ds 0 9054-017 figure 17. parallel operation thermal considerations when designing a power mosfet gate drive, the maximum power dissipation in the driver must be considered to avoid exceeding maximum junction temperature. data on package thermal resistance is provided in table 2 to help the designer with this task. there are several equally important aspects that must be considered, such as the following: ? gate charge of the power mosfet being driven ? bias voltage value used to power the driver ? maximum switching frequency of operation ? value of external gate resistance ? maximum ambient (and pcb) temperature ? type of package all of these factors influence and limit the maximum allowable power dissipated in the driver. the gate of a power mosfet has a nonlinear capacitance characteristic. for this reason, although the input capacitance is usually reported in the mosfet data sheet as c iss , it is not useful to calculate power losses. the total gate charge necessary to turn on a power mosfet device is usually reported on the device data sheet under q g . this parameter varies from a few nanocoulombs (nc) to several hundred nc, and is specified at a specific v gs value (10 v or 4.5 v). the power necessary to charge and then discharge the gate of a power mosfet can be calculated as: p gate = v gs q g f sw where: v gs is the bias voltage powering the driver (vdd). q g is the total gate charge. f sw is the maximum switching frequency. the power dissipated for each gate (p gate ) still needs to be multiplied by the number of drivers (in this case, 1 or 2) being used in each package, and it represents the total power dissi- pated in charging and discharging the gates of the power mosfets. not all of this power is dissipated in the gate driver because part of it is actually dissipated in the external gate resistor, r g . the larger the external gate resistor is, the smaller the amount of power that is dissipated in the gate driver. in modern switching power applications, the value of the gate resistor is kept at a minimum to increase switching speed and minimize switching losses. in all practical applications where the external resistor is in the order of a few ohms, the contribution of the external resistor can be neglected, and the extra loss is assumed in the driver, providing a good guard band to the power loss calculations.
adp3654 rev. 0 | page 11 of 12 in addition to the gate charge losses, there are also dc bias losses, due to the bias current of the driver. this current is present regardless of the switching. p dc = v dd i dd the total estimated loss is the sum of p dc and p gate . p loss = p dc + (n p gate ) where n is the number of gates driven. when the total power loss is calculated, the temperature increase can be calculated as t j = p loss ja design example for example, consider driving two irfs4310z mosfets with a v dd of 12 v at a switching frequency of 300 khz, using an adp3654 in the soic_n_ep package. the maximum pcb temperature considered for this design is 85c. from the mosfet data sheet, the total gate charge is q g = 120 nc. p gate = 12 v 120 nc 300 khz = 432 mw p dc = 12 v 1.2 ma = 14.4 mw p loss = 14.4 mw + (2 432 mw) = 878.4 mw the soic_n_ep thermal resistance is 59c/w. t j = 878.4 mw 59c/w = 51.8c t j = t a + t j = 136.8c t jmax this estimated junction temperature does not factor in the power dissipated in the external gate resistor and, therefore, provides a certain guard band. if a lower junction temperature is required by the design, the mini_so_ep package can be used, which provides a thermal resistance of 43c/w, so that the maximum junction temperature is t j = 878.4 mw 43c/w = 37.7c t j = t a + t j = 122.7c t jmax other options to reduce power dissipation in the driver include reducing the value of the v dd bias voltage, reducing switching fre- quency, and choosing a power mosfet with smaller gate charge.
adp3654 rev. 0 | page 12 of 12 outline dimensions compliant to jedec standards ms-012-a a controlling dimensions are in millimeter; inch dimensions (in parentheses) are rounded-off millimeter equivalents for reference only and are not appropriate for use in design. 072808- a 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.050) 0.40 (0.016) 0.50 (0.020) 0.25 (0.010) 45 8 0 1.75 (0.069) 1.35 (0.053) 1.65 (0.065) 1.25 (0.049) seating plane 85 4 1 5.00 (0.197) 4.90 (0.193) 4.80 (0.189) 4.00 (0.157) 3.90 (0.154) 3.80 (0.150) 1.27 (0.05) bsc 6.20 (0.244) 6.00 (0.236) 5.80 (0.228) 0.51 (0.020) 0.31 (0.012) coplanarity 0.10 top view 2.29 (0.090) bottom view (pins up) 2.29 (0.090) 0.10 (0.004) max for proper connection of the exposed pad, refer to the pin configuration and function descriptions section of this data sheet. figure 18. 8-lead standard small outlin e package, with exposed pad [soic_n_ep] narrow body (rd-8-1) dimensions shown in millimeters and (inches) 071008-a compliant to jedec standards mo-187-aa-t 0.70 0.55 0.40 8 0 0.94 0.86 0.78 seating plane 1.10 max 0.15 0.10 0.05 0.40 0.33 0.25 5.05 4.90 4.75 2.26 2.16 2.06 1.83 1.73 1.63 3.10 3.00 2.90 3.10 3.00 2.90 8 5 4 1 0.65 bsc 0.525 bsc pin 1 indicator coplanarity 0.10 0.23 0.18 0.13 top view bottom view exposed pa d for proper connection of the exposed pad, refer to the pin configuration and function descriptions section of this data sheet. figure 19. 8-lead mini small outline package with exposed pad [mini_so_ep] (rh-8-1) dimensions shown in millimeters ordering guide model 1 uvlo option temperature range package description package option ordering quantity branding adp3654ardz-rl 4.5 v ?40c to +125c 8-lead standard small outline package (soic_n_ep), 13 tape and reel rd-8-1 2,500 ADP3654ARHZ-RL 4.5 v ?40c to +125c 8-lead mini small outline package (mini_so_ep), 13 tape and reel rh-8-1 3,000 78 1 z = rohs compliant part. ?2010 analog devices, inc. all rights reserved. trademarks and registered trademarks are the prop erty of their respective owners. d09054-0-8/10(0)

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