st st st st p p p p 943 943 943 943 7 7 7 7 p channel enhancement mode mosfet - 5. 7 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. st p9437 20 10 . v1 description description description description st p9437 is the p-channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application , notebook computer power management , and other battery powered circuits where higt-side switching . pin pin pin pin configuration configuration configuration configuration sop-8 sop-8 sop-8 sop-8 part part part part marking marking marking marking sop-8 sop-8 sop-8 sop-8 y: y: y: y: year year year year code code code code a: a: a: a: date date date date code code code code feature feature feature feature ? -30v/-5. 7 a, r ds(on) = 45 m (typ.) @v gs = -10v ? -30v/-5. 0 a, r ds(on) = 50 m @v gs = - 4.5 v ? -30v/-4. 4 a, r ds(on) = 6 5m @v gs = - 2 .5v ? super high density cell design for extremely low r ds(on) ? exceptional on-resistance and maximum dc current capability ? sop-8 package design
st st st st p p p p 943 943 943 943 7 7 7 7 p channel enhancement mode mosfet - 5. 7 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. st p9437 20 10 . v1 absoulte absoulte absoulte absoulte maximum maximum maximum maximum ratings ratings ratings ratings (ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol typical typical typical typical unit unit unit unit drain-source voltage vdss -30 v gate-source voltage vgss 12 v continuous drain current (tj=150 ) ta=25 ta=70 id - 6. 8 -4.6 a pulsed drain current idm -30 a continuous source current (diode conduction) is -2.3 a power dissipation ta=25 ta=70 pd 2. 8 1. 8 w operation junction temperature tj -55/ 150 storgae temperature range tstg -55/150 thermal resistance-junction to ambient r ja 70 /w
st st st st p p p p 943 943 943 943 7 7 7 7 p channel enhancement mode mosfet - 5. 7 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. st p9437 20 10 . v1 electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol condition condition condition condition min min min min typ typ typ typ max max max max uni uni uni uni t t t t static static static static drain-source breakdown voltage v (br)dss v gs =0v,id=-250ua -30 v gate threshold voltage v gs(th) v ds =v gs ,id=- 2 50ua - 0.4 - 1.0 v gate leakage current i gss v ds =0v,v gs = 20v 100 na zero gate voltage drain current i dss v ds =- 24 v,v gs =0v -1 ua v ds =- 24 v,v gs =0v t j =85 -5 on-state drain current i d(on) v ds = -5v,v gs =-4.5v - 10 a drain-source on- resistance r ds(on) v gs =-10v,i d = - 5. 7 a v gs =- 4.5 v,i d =-5.0a v gs =- 2.5 v,i d =-4.4a 0.0 35 0.0 40 0.0 50 0.045 0.050 0.065 forward transconductance gfs v ds =-15v,i d =-5.7v 13 s diode forward voltage v sd i s =-2.3a,v gs =0v -0.8 -1.2 v dynamic dynamic dynamic dynamic total gate charge q g v ds =-15v,v gs =-10v i d -3.5a 16 24 nc gate-source charge q gs 2.3 gate-drain charge q gd 4.5 input capacitance c iss v ds ==-15v,vgs=0v f=1mhz 680 pf output capacitance c oss 120 reverse transfer c apacitance c rss 75 turn-on time t d(on) tr v dd =-15v,r l =15 i d =-1a,v gen =-10v r g =6 14 25 ns 16 26 turn-off time t d(off) tf 4 2 70 30 5 0
st st st st p p p p 943 943 943 943 7 7 7 7 p channel enhancement mode mosfet - 5. 7 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. st p9437 20 10 . v1 typical typical typical typical characterictics characterictics characterictics characterictics
st st st st p p p p 943 943 943 943 7 7 7 7 p channel enhancement mode mosfet - 5. 7 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. st p9437 20 10 . v1 typical typical typical typical characterictics characterictics characterictics characterictics
st st st st p p p p 943 943 943 943 7 7 7 7 p channel enhancement mode mosfet - 5. 7 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. st p9437 20 10 . v1 package package package package outline outline outline outline sop-8p sop-8p sop-8p sop-8p
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