advanced power n-channel enhancement mode electronics corp. power mosfet fast switching performance bv dss 30v single drive requirement r ds(on) 10m full isolation package i d 53a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4.2 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice continuous drain current, v gs @ 10v 200810282 rohs-compliant product 1 53 drain-source voltage 30 gate-source voltage + 20 continuous drain current, v gs @ 10v parameter rating AP9408AGI 33 pulsed drain current 1 160 total power dissipation 29.7 thermal data parameter storage temperature range -55 to 150 operating junction temperature range -55 to 150 g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for commercial-industrial through hole applications. g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 10 m ? ? ?
ap9408ag i fig 1. typical output characteristics fig 2. typical output characteristics 0.31 t rr q rr fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 8 9 10 11 12 13 14 246810 v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics 0.31 AP9408AGI 0 200 400 600 800 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.0 2 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =20v v ds =24v i d =20a
package outline : to-220cfm millimeters min nom max a 4.30 4.70 4.90 a1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 e 9.70 10.00 10.40 l 12.00 --- 15.00 l3 2.91 3.41 3.91 l4 14.70 15.40 16.10 ---- 3.20 ---- e ---- 2.54 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220cfm symbols advanced power electronics corp. ywwsss package code 9408agi part number date code (ywwsss) y last digit of the year ww week sss sequence ywwsss logo a1 a c e b b1 e l4 c2 a1 a c e b b1 e l4 c2 l3 l meet rohs requirement for low voltage mosfet only 5
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