s mhop microelectronics c orp. a stb/p432s symbolv ds v gs i dm e as w a p d c 62.5 -55 to 150 i d units parameter 40 60 240 vv 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj product summary v dss i d r ds(on) (m ) max 40v 60a 11 @ vgs=4.5v 9 @ vgs=10v n-channel logic enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg ver 1.0 www.samhop.com.tw jun,24,2008 1 details are subject to change without notice. t c =25 c 50 c/w thermal resistance, junction-to-ambient r ja 2 c/w thermal resistance, junction-to-case r jc 130 s t b s e r ie s t o-263(dd-p ak ) g s d s t p s e r ie s t o-220 s d g features super high dense cell design for extremely low rds(on). high power and current handling capability. to-220 & to-263 package.
4 symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) 1 v g fs s v sd c iss 1600 pf c oss 280 pf c rss 150 pf q g 20 nc 21 nc q gs 45 nc q gd 16 t d(on) 32 ns t r 3.5 ns t d(off) 7.3 ns t f ns gate-drain charge v ds =15v,v gs =0v switching characteristics gate-source charge v dd =15v i d =30a v gs =10v r gen =3.3 ohm total gate charge rise time turn-off delay time v ds =15v,i d =30a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =30a v ds =10v , i d =30a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =28a m ohm c f=1.0mhz c v ds =15v,i d =30a, v gs =10v drain-source diode characteristics c v gs =0v,i s =30a 0.95 1.3 v notes stb/p432s ver 1.0 www.samhop.com.tw jun,24,2008 2 nc v ds =15v,i d =28a,v gs =4.5v 15 a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=1.25mh,r g =25 ,v dd = 20v.(see figure13) _ _ _ 1.7 7 9 9 11 26 i s maximum continuous drain-source diode forward current a 30
stb/p432s ver 1.0 www.samhop.com.tw jun,24,2008 3 t j ( c ) v g s = 1 0v v g s = 4.5 v i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 50 40 30 20 10 0 2.0 1.8 1.6 1.4 1.2 1.0 0 0 25 50 125 100 75 v g s =10v i d =30a v g s =4.5v i d =28a 150 60 0 0.5 1 1.5 2 2.5 3 12 96 3 1 12 24 36 48 60 1 15 20 15 10 5 0 0 t j =1 25 c 3.2 4.0 2.4 1.6 0.8 4.8 -55 c 25 c v g s =3 v v g s = 2.5 v v g s =4 v v g s = 4 .5v v g s = 1 0v 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =250ua
stb/p432s ver 1.0 www.samhop.com.tw jun,24,2008 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 30 25 20 15 10 5 0 2 4 6 8 10 0 25 c 125 c i d =30a 75 c 20.0 10.0 1.0 0 1.2 25 c 75 c 125 c 0.96 0.72 0.48 0.24 5.0 switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 0 5 10 15 20 25 30 2400 2000 1600 1200 800 400 0 c is s c os s c rs s 100 10 1 1 6 10 60 100 60 600 300 220 t d(off) t f v ds =15v ,id=30a v g s =10v t d(on) t r 10 86 4 2 0 0 5 10 15 20 25 30 35 40 v ds =15v i d =30a 100 10 0.1 1 1000 1 10 100 1 0 0us r ds (o n ) l im i t 1 ms 10ms d c v g s =10v s ingle p uls e t c=25 c
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r i v e r a 15v 20v 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r j c (t)=r (t) * 2. =s ee datas heet 3. t j m- t c = p * (t ) 4. duty c ycle, d=t1/t2 r j c r j c r j c 10 s ingle p uls e 0.02 0.05 0.1 0.2 d=0.5 0.01 stb/p432s ver 1.0 www.samhop.com.tw jun,24,2008 5 unclamped inductive test circuit unclamped inductive wave forms figure 13a. figure 13b. square wave pulse duration (msec) figure 14. normalized thermal transient impedance curve r(t),normalized effective transient thermal impedance
stb/p432s ver 1.0 www.samhop.com.tw jun,24,2008 6
stb/p432s ver 1.0 www.samhop.com.tw jun,24,2008 7
to-220/263ab tube stb/p432s ver 1.0 www.samhop.com.tw jun,24,2008 8
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