ghz technology inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory. ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 MDS400 400 watts pk, 45 volts, 32 m s, 2% avionics 1030-1090 mhz general description the MDS400 is a common base transistor capable of providing 400 watts peak, pulsed, rf output power over the band 1030-1090 mhz. the transistor includes double input prematching for full broadband capability. gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. case outline 55kt, style 1 absolute maximum ratings maximum power dissipation @ 25 c 1450 watts o maximum voltage and current bvces collector to emiter voltage 55 volts bvebo collector to base voltage 4.0 volts ic collector current 40 amps maximum temperatures storage temperature -40 to + 200 ( c operating junction temperature + 200 ( c electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units po pin pg h vswr 1 power out power input power gain efficiency load mismatch tolerance f =1030/1090 mhz vcc=45volts pulse width = 32 ) s duty factor = 2 % at rated power 400 6.5 35 90 10:1 watts watts db % bvces bvebo h fe r q jc collector to emitter breakdown emitter to base breakdown current gain thermal resistance ic = 50 ma ie = 30 ma vce = 5 v, ic = 1 a tc = 25 c o 55 3.5 10 0.12 volts volts c/w o issue september 22, 1995
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