smd type ic www.kexin.com.cn 1 smd type ic mos field effect transistor KPA1792 features low on-state resistance n-channel r ds(on)1 =26m max. (v gs =10v,i d =3.4a) r ds(on)2 =36m max. (v gs =4.5v,i d =3.4a) r ds(on)3 =42m max. (v gs =4.0v,i d =3.4a) p-channel r ds(on)1 =36m max. (v gs =-10v,i d =-2.9a) r ds(on)2 =54m max. (v gs =-4.5v,i d =-2.9a) r ds(on)3 =65m max. (v gs =-4.0v,i d =-2.9a) low input capacitance n-channel c iss = 760 pf typ. p-channel c iss = 900 pf typ. built-in gate protection diode small and surface mount package absolute maximum ratings ta = 25 parameter symbol n-channel p- channel unit drain to source voltage (v gs =0v) v dss 30 -30 v gate to source voltage (v ds =0v) v gss 20 20 v drain current (dc) i d(dc) 6.8 5.8 a drain current (pulse) *1 i d(pulse) 27.2 23.2 a total power dissipation (1 unit) *2 p t w total power dissipation (2 units) *2 p t w channel temperature t ch storage temperature t stg *1 pw 10 s, duty cycle 1% *2 mounted on ceramic substrate of 2000 mm 2 x1.6mm 1.7 2 150 -55to+150
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol min typ max unit v ds =30v,v gs =0v n-ch 10 v ds =-30v,v gs =0v p-ch -1 v gs = 16 v, v ds =0v n-ch 10 v gs = 16 v, v ds =0v p- ch 10 v ds =10v,i d = 1 ma n-ch 1.5 2.1 2.5 v ds =-10v,i d = -1 ma p- ch -1.5 -2.0 -2.5 v ds =10v,i d = 3.4 a n-ch 3.0 7.5 v ds =-10v,i d = -2.9a p- ch 3.5 8.0 r ds(on)1 v gs =10v,i d =3.4a 20.5 26 m r ds(on)2 v gs =4.5v,i d =3.4a 27 36 m r ds(on)3 v gs =4.0v,i d =3.4a 31 42 m r ds(on)1 v gs =-10v,i d = -2.9 a 30 36 m r ds(on)2 v gs =-4.5v,i d = -2.9 a 43 54 m r ds(on)3 v gs =-4.0v,i d = -2.9 a 49 65 m n-channel n-ch 760 v ds =10v,v gs = 0 v,f = 1 mhz p- ch 900 n-ch 250 p- channel p- ch 300 v ds =-10v,v gs = 0 v,f = 1 mhz n-ch 95 p- ch 120 n-channel n-ch 20 v dd =15v,i d =3.4a,v gs =10v p- ch 23 r g =10 n-ch 140 p- ch 220 p- channel n-ch 50 v dd =-15v,i d =-2.9a,v gs =-10v p- ch 90 r g =10 n-ch 30 p- ch 70 n-channel n-ch 14 i d =6.8a,v dd =24v,v gs =10v p-ch 17 n-ch 2 p- channel p- ch 2.5 i d =-5.8a,v dd =-24v,v gs =-10v n-ch 5 p- ch 4.0 i f =6.8a,v gs =0v n-ch 0.86 i f =5.8a,v gs =0v p-ch 0.85 n-channel n-ch 30 i f =6.8a,v gs =0v,d i /d t = 100 a/ s p- ch 40 p-channel n-ch 20 i f =5.8a,v gs =0v,d i /d t = 100 a/ s p- ch 30 testconditons pf n-ch p- ch nc nc pf pf a a v s q rr reverse recovery charge nc ns nc ns ns ns ns v v f(s-d) body diode forward voltage note t rr reverse recovery time q gs gate to source charge q gd gate to drain charge t f q g fall time total gate charge reverse transfer capacitance turn-on delay time rise time turn-off delay time c rss t d(on) t r t d(off) c iss c oss input capacitance output capacitance |y fs | forward transfer admittance drain to source on-state resistance i dss zero gate voltage drain current i gss gate leakage current v gs(off) gate cut-off voltage KPA1792
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