p-channel 60 v (d-s) mosfet feature s ? halogen-free acc ording to iec 61249-2-21 definition ? trenchfet ? power mosfet ? high-side switching ? low on-resistance: 6 ? ? low threshold: - 2 v (typ.) ? fast swtiching speed: 20 ns (typ.) ? low input capacitance: 20 pf (typ.) ? 1 200 v esd protection ? compliant to rohs directive 2002/95/ec applications ? drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. ? battery operated systems ? power supply converter circuits ? solid-state relays ben e fits ? ease in driving switches ? low offset (error) voltage ? low-voltage operation ? high-speed circuits ? easily driven without buffer notes: a. surface mounted on fr4 board. b. pulse width limited by ma ximum junctio n tempera ture. p r oduct summary v ds (v) r d s (on) ( ? )v gs(t h) (v) i d (m a) - 60 6 at v gs = - 10 v - 1 to - 3 - 185 absolu t e maximum ratings t a = 25 c, unless otherwise noted pa rameter symb ol l imit un it d rain-source voltage v ds - 60 v gate-source v o ltage v gs 20 c ontin uous drain current a t a = 25 c i d - 185 ma t a = 100 c - 115 pulsed dr ain current b i dm - 800 p o wer dissipation a t a = 25 c p d 350 m w t a = 100 c 140 maxim um junction-to-ambient a r thj a 350 c / w oper ating junction and storage temperature range t j, t st g - 55 to 150 c s g d p-channel mosfet g t o-236 (sot -23) s d to p view 2 3 1 dts 01 1
no t es: a. p ulse test: p w ? 300 s duty cycle ? 2 %. b. s witching time is essentiall y independent of operating te mperature. st resses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecif ications t a = 25 c, unless otherwise noted p aram eter sym bol t est co nditions limits unit min. typ. a max. static drain-source breakdo wn voltage v ds v gs = 0 v, i d = - 10 a - 60 v gate-thre shold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 gate-body leakage i gss v ds = 0 v , v gs = 20 v 10 a v ds = 0 v , v gs = 10 v 20 0 na v ds = 0 v , v gs = 10 v , t j = 85 c 500 v ds = 0 v, v gs = 5 v 10 0 zero gate voltage drain current i dss v ds = - 60 v , v gs = 0 v - 25 v ds = - 60 v , v gs = 0 v , t j = 85 c - 250 on-state drain current a i d( on) v gs = - 10 v , v ds = - 4.5 v - 5 0 ma v gs = - 10 v , v ds = - 10 v - 60 0 drain-source on-resistance a r ds( on) v gs = - 4.5 v , i d = - 25 ma 10 ? v gs = - 10 v , i d = - 500 ma 6 v gs = - 10 v , i d = - 50 0 ma, t j =125 c 9 f orward transconductance a g fs v ds = - 10 v , i d = - 100 ma 80 ms diode forward voltage v sd i s = - 200 ma, v gs = 0 v - 1.4 v dy nam ic total gate charge q g v ds = - 30 v , v gs = - 15 v i d ? - 500 ma 1.7 nc gate-s o urce charge q gs 0.2 6 gate- drain charge q gd 0.4 6 inpu t capacitance c iss v ds = - 2 5 v , v gs = 0 v f = 1 mhz 23 pf output c apacitance c os s 10 re v erse transfer capacitance c rs s 5 switc h ing b tu r n - o n t i m e t d( on) v dd = - 25 v , r l = 150 ? i d ? - 200 ma, v gen = - 10 v , r g = 10 ? 20 ns t ur n-off time t d( off) 35 2
typica l c haracteristics 25 c, unless otherwise noted output cha r acteristics on-resistance vs. drain current gate charge 0.0 0.2 0.4 0.6 0.8 1.0 012345 v ds - drain-to-source voltage (v) - drain cu rrent (a) i d v gs = 10 v 5 v 4 v 6 v 7 v 8 v 0 4 8 12 16 20 0 200 400 600 8 00 1000 i d - drain cu rrent (ma) v gs = 4.5 v v gs = 10 v - o n-resistance ( ) r ds(on) v gs = 5 v 0 3 6 9 12 15 0.0 0.3 0.6 0.9 1.2 1.5 1. 8 i d = 500 ma - gate-to-so u rce v oltage (v ) q g - t otal gate charge (nc) v gs v ds = 30 v v ds = 48 v t r ansfer characteristics capacitance on-resistance vs. junction temperature 0 300 600 900 1200 02468 10 v gs - gate-to-so u rce v oltage ( v ) - drain cu rrent (ma) i d t j = - 55 c 125 c 25 c 0 8 16 24 32 40 0 5 10 15 20 25 v ds - drain-to-sou rce v oltage (v ) c - capacitance (pf) c rss c os s c is s v gs = 0 v 0.0 0.3 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction t emperat u re (c) v gs = 10 v at 500 ma v gs = 4.5 v at 25 ma r ds ( on) - on-resistance (normalized) 3
. sou r ce-drain diode forward voltage threshold voltage variance over temperature 1.2 1.5 1 100 1000 0.00 0.3 0.6 0.9 t j = 25 c t j = 125 c v sd - so u rce-to-drain v oltage (v ) - s o u rce c u rrent (a) i s 10 t j = - 55 c v gs = 0 v - 0.3 - 0.2 - 0.1 - 0.0 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 v gs(th) v ariance (v ) i d = 250 a t j - j u nction t emperat u r e (c) on -res istance vs. gate-source voltage single pulse power, junction-to-ambient 0 2 4 6 8 10 02468 10 v gs - gate-to-so u rce v oltage ( v ) i d = 500 ma i d = 200 ma r ds(on) - on-resistance ( ) 0.01 0 1 2.5 3 100 600 0.1 power (w) t ime (s) 1.5 2 0.5 1 10 t a = 25 c norm alize d thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 6 01 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pu lse d u ty cycle = 0.5 sq u are w av e p u lse du ration (s) n ormalized ef fecti v e transient thermal impedance 1. du ty cycle, d = 2. per unit base = r th j a = 350 c/w 3. t jm - t a = p dm z th j a (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm th e rm a l ratings (t a = 25 c, un le ss ot he rwi se no ted) 4
1 sot-23 ( t o-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pla ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pla ne 0.25 mm dim millimet ers inches mi n max mi n max a 0 .89 1.12 0.0 35 0.044 a 1 0 .01 0.10 0.0004 0.004 a 2 0 .88 1.02 0.0 346 0.040 b 0. 35 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3.04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1 .20 1.40 0.047 0.055 e 0.95 bsc 0.0 3 74 ref e 1 1.90 bsc 0.0 748 ref l 0 .40 0.60 0.016 0.024 l 1 0.6 4 ref 0. 025 ref s 0.50 ref 0.020 ref q 3 8 38 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479 package information www.din-tek.jp
1 application note rec ommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index r etur n to index application note www.din-tek.jp
1 disclaimer all prod uct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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