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| inchange semiconductor isc product specification isc silicon pnp darlington power transistor bdx86/a/b/c description high dc current gain- : h fe = 750(min)@ i c = -3a collector-emitter sustaining voltage- : v ceo(sus) = -45v(min)- bdx86; -60v(min)- bdx86a -80v(min)- bdx86b; -100v(min)- BDX86C complement to type bdx85/a/b/c applications designed for use in power linear and switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit bdx86 -45 bdx86a -60 bdx86b -80 v cbo collector-base voltage BDX86C -100 v bdx86 -45 bdx86a -60 bdx86b -80 v ceo collector-emitter voltage BDX86C -100 v v ebo emitter-base voltage -5 v i c collector current-continuous -10 a i cm collector current-peak -15 a i b b base current -100 ma p c collector power dissipation @ t c =25 100 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.75 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor bdx86/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdx86 -45 bdx86a -60 bdx86b -80 v ceo(sus) collector-emitter sustaining voltage BDX86C i c = -100ma; i b = 0 -100 v v ce( sat )-1 collector-emitter saturation voltage i c = -4a; i b = -16ma b -2.0 v v ce( sat )-2 collector-emitter saturation voltage i c = -8a; i b = -40ma b -4.0 v v be( sat ) base-emitter saturation voltage i c = -8a; i b = -80ma b -4.0 v v be( on ) base-emitter on voltage i c = -4a; v ce = -3v -2.8 v bdx86 v cb = -45v; i e = 0 v cb = -45v; i e = 0; t c = 150 -0.5 -5.0 bdx86a v cb = -60v; i e = 0 v cb = -60v; i e = 0; t c = 150 -0.5 -5.0 bdx86b v cb = -80v; i e = 0 v cb = -80v; i e = 0; t c = 150 -0.5 -5.0 i cbo collector cutoff current BDX86C v cb = -100v; i e = 0 v cb = -100v; i e = 0; t c = 150 -0.5 -5.0 ma bdx86 v ce = -22v; i b = 0 b bdx86a v ce = -30v; i b = 0 b bdx86b v ce = -40v; i b = 0 b i ceo collector cutoff current BDX86C v ce = -50v; i b = 0 b -1.0 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -2.0 ma h fe-1 dc current gain i c = -3a; v ce = -3v 1000 h fe-2 dc current gain i c = -4a; v ce = -3v 750 18000 h fe-3 dc current gain i c = -8a; v ce = -4v 200 isc website www.iscsemi.cn 2 |
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