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2-27 2 power amplifiers

rf micro devices, inc. 7625 thorndike road greensboro, nc 27409, usa tel (336) 664 1233 fax (336) 664 0454 http://www.rfmd.com si bjt gaas mesfet gaas hbt si bi-cmos sige hbt si cmos
bias 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 vcc nc rf in gnd gnd gnd gnd pc gnd rf out rf out gnd gnd rf out rf out gnd RF2108
? 4.8v amps cellular handsets 4.8v cdma/amps cellular handsets driver amplifier in cellular base stations portable battery powered equipment the RF2108 is a high power, high efficiency linear ampli- fier ic. the device is manufactured on an advanced gal- lium arsenide heterojunction bipolar transistor (hbt) process, and has been designed for use as the final rf amplifier in dual-mode 4-cell cdma/amps hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800mhz to 950mhz band. the device is self-contained with 50 ? input and the output can be easily matched to obtain optimum power, effi- ciency, and linearity characteristics. single 4.2v to 6.0v supply 28dbm linear output power 29db gain with analog gain control 45% linear efficiency on-board power down mode 800mhz to 950mhz operation RF2108 linear power amplifier RF2108 pcba fully assembled evaluation board rev b3 991129 .392 .386 .244 .230 .158 .150 .009 .004 .059 .054 .050 .020 .014 8max 0min .035 .016 .010 .008 .069 .064 1 !" #
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absolute maximum ratings parameter rating unit supply voltage (no rf) -0.5 to +8.0 v dc supply voltage (p out <31dbm) -0.5 to +6.0 v dc power control voltage (v pc ) -0.5 to +6.0 or v cc v dc supply current 800 ma input rf power +12 dbm output load vswr 10:1 storage temperature -40 to +150 c junction temperature 200 c parameter specification unit condition min. typ. max. overall t=25c, v cc =4.8v, v pc =3.3v, freq=824mhz to 849mhz usable frequency range 800 824 to 849 950 mhz linear gain 27 29 31 db total linear efficiency 40 45 % efficiency at max output 50 55 % off isolation 23 27 db v pc =0v,p in =+6dbm second harmonic -30 dbc including second harmonic trap maximum linear output power 28.5 29 is-95a cdma modulation adjacent channel power rejec- tion @ 885 khz -46 -44 dbc pout = 28 dbm acpr can be improved by trading off effi- ciency. adjacent channel power rejec- tion @ 1.98 mhz -58 -56 dbc pout = 28 dbm maximum cw output power 31.5 32 dbm operating case temperature -30 110 c pout = 31 dbm, efficiency = 55% ambient operating temperature -30 100 c junction to case thermal resis- tance 85 c/w input vswr <2:1 output load vswr 10:1 no oscillations power down turn on/off time 100 ns total current 10 a ?off? state v pc ?off? voltage 0.2 0.5 v v pc ?on? voltage 3.0 3.3 vcc v power supply power supply voltage 4.2 4.8 6.0 v operating voltage idle current 40 160 ma v pc =3.3v current into vpc pin 15 20 ma ?on? state caution! esd sensitive device. rf micro devices believes the furnished information is correct and accurate at the time of this printing. however, rf micro devices reserves the right to make changes to its products without notice. rf micro devices does not assume responsibility for the use of the described product(s).
2-29 RF2108 rev b3 991129 2 power amplifiers

pin function description interface schematic 1vcc power supply for the driver stage, and interstage matching. shunt inductance is required on this pin, which can be achieved by an induc- tor to v cc , with a decoupling capacitor on the v cc side. the value of the inductor is frequency dependent, 3.3nh is required for 830mhz, and 1.2nh for 950mhz. instead of an inductor, a high impedance microstrip line can be used. 2nc not connected. 3rf in rf input. this is a 50 ? input, but the actual input impedance depends on the interstage matching network connected to pin 1. an external dc blocking capacitor is required if this port is connected to a dc path to ground or a dc voltage. see pin 1. 4gnd ground connection. keep traces physically short and connect immedi- ately to the ground plane for best performance. 5gnd same as pin 4. 6gnd same as pin 4. 7gnd same as pin 4. 8pc power control. when this pin is "low", all circuits are shut off. a "low" is typically 0.5v or less at room temperature. during normal operation this pin is the power control. control range varies from about 2v for 0dbm to v cc for +31dbm rf output power. the maximum power that can be achieved depends on the actual output matching. pc should never exceed 6.0v or v cc , whichever is the lowest. 9gnd same as pin 4. 10 rf out rf output and power supply for the output stage. the four output pins are combined, and bias voltage for the final stage is provided through these pins. the external path must be kept symmetric until combined to ensure stability. an external matching network is required to provide the optimum load impedance; see the application schematics for details. 11 rf out same as pin 10. see pin 10. 12 gnd same as pin 4. 13 gnd same as pin 4. 14 rf out same as pin 10. see pin 10. 15 rf out same as pin 10. see pin 10. 16 gnd same as pin 4. rf in vcc from bias sta g es pc to rf transistors rf out from bias sta g es
2-30 RF2108 rev b3 991129 2 power amplifiers

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! (download bill of materials from www.rfmd.com.) bias l5 1.8 nh c24 100 pf c1 33 pf 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 vpc c3 100 pf c25 1 nf c26 3.3 f l2 3.3 nh c8 12 pf c9 4.3 pf c11 100 pf c2 3 pf l1 6.8 nh c6 100 pf c7 1 nf c10 10 f c5 100 nf c15 1 f v cc rf in rf out bias l5 1.8 nh c24 100 pf c1 33 pf rf in 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 vpc c3 100 pf c25 1 nf c26 3.3 f z0=50, l=200 l2 3.3 nh z0=50, l=200 c8 11 pf c9 4.3 pf c11 100 pf rf out c2 3 pf l1 6.8 nh c6 100 pf c7 1 nf c10 10 f c5 100 nf c15 1 f vcc 2108400a rev -
2-31 RF2108 rev b3 991129 2 power amplifiers

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