on-state current 8 amp fs08...i standard scr these series of s ilicon c ontrolled r ectifier use a high performance pnpn technology. these parts are intended for general purpose applications where high gate sensitivity is required. dec - 02 absolute maximum ratings, according to iec publication no. 134 on-state current average on-state current non-repetitive on-state current non-repetitive on-state current fusing current peak reverse gate voltage peak gate current peak gate dissipation gate dissipation operating temperature storage temperature soldering temperature i t(rms) parameter conditions min. max. unit off-state voltage 200 v ?600 v symbol i t(av) i tsm i tsm i 2 t v grm i gm p gm p g(av) t j t stg t sld 180?conduction angle, t c = 110 ? half cycle, q = 180 ? t c = 110 ? half cycle, 60 hz half cycle, 50 hz t p = 10ms, half cycle i gr = 10 ? 20 ? max. 20 ? max. 20ms max. 10s max. -40 -40 a a a a a 2 s v a w w ? ? ? 8 5 73 70 24.5 5 4 5 1 +125 +150 260 ipak (plastic) k a g a gate trigger current > 0.5 to <15 ma repetitive peak off state voltage parameter conditions voltage unit symbol v drm v rrm r gk = 1 k w b 200 v d 400 m 600
fs08...i standard scr dec - 02 part number information fagor scr current case voltage sensitivity f s 08 08 b i 00 forming tu packaging electrical characteristics gate trigger current off-state leakage current on-state voltage gate trigger voltage gate non trigger voltage holding current parameter conditions sensitivity unit symbol i gt i drm v d = 12 v dc , r l = 33 w . t j = 25 ? ma ma ? v v v min max max max max max min max / i rrm v tm v gt v gd i h di / dt r th(j-a) critical rate of current rise thermal resistance junction-amb ?/w v d = v drm , t j = 125 ? t j = 25 ? v r = v rrm , at i t = 16 amp, tp = 380 ?, t j = 25 ? i t = 100 ma , tr 100 ns, t j = 125 ? v d = 12 v dc , r l = 33 w , t j = 25 ? v d = v drm , r l = 3.3k w , t j = 125 ? ma min a/? r d t j = 125 ? r d dynamic resistance max m w max i l ma latching current i g = 1.2 i gt v/? dv / dt critical rate of voltage rise v d = 0.67 x v drm , min r th(j-c) thermal resistance junction-case for dc ?/w v t0 t j = 125 ? threshold voltage max v gate open gate open r gk = 220 w i g = 2 x i gt 08 0.5 5 2 5 1.6 1.3 0.2 50 20 100 40 150 09 2 15 25 50 0.85 46 t j = 125 ? t j = 125 ? 5030
dec - 02 fs08...i standard scr fig. 1: maximum average power dissipation versus average on-state current. 0 2 10 8 6 4 2 0 4 6 p (w) i t(av) (a) 1 3 5 7 1.0 k = [zth(j-c) / rth (j-c)] fig. 3: relative variation of thermal impedance junction to case versus pulse duration. 1e-3 1e-2 1e-1 1e+0 tp (s) 0.5 0.2 0.1 a 360 fig. 2: average and d.c. on-state current versus case temperature. i t(av) (a) t case (?) 10 8 6 4 2 0 0 25 50 75 100 125 a = 180 d.c. i gt , i h (tj) / i gt , i h (tj = 25 ?) fig. 4: relative variation of gate trigger current, holding and latching current versus junction temperature. tj (?) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 20 60 80 100 0 40 120 140 igt ih & il 1 10 100 1000 fig. 5: non repetitive surge peak on-state current versus number of cycles. 80 70 60 50 40 30 20 10 0 i tsm (a) number of cycles tj initial = 25 c f = 50 hz 300 1 10 i tsm (a). i 2 t (a 2 s) fig. 6: non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of i 2 t. tp(ms) 2 5 100 10 i tsm 20 50 i 2 t tj initial = 25 ?
dec - 02 fs08...i standard scr 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 fig. 9: on-state characteristics (maximum values). i tm (a) 4.0 100.0 v tm (v) 4.5 10.0 1.0 0.1 5.0 tj = tj max. tj = 25 c tj max vto = 0.85 v rt = 46 m w package mechanical data ipak to 251-aa marking: type number weight: 0.2 g
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