very low conduction losses negligible switching losses low forward and reverse recovery times features and benefits low voltage drop and rectifier suited for switching mode base drive and transistor circuits. description symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i frm repetitive peak forward current * tp=5 m s f=1khz 110 a i f (av) average forward current* ta = 75c d = 0.5 3a i fsm surge non repetitive forward current t p = 10ms sinusoidal 70 a t stg storage temperature range - 65 to + 150 c tj maximum operating junction temperature 150 c t l maximum lead temperature for soldering during 10s at 4mm from case 230 c * on infinite heatsink with 10mm lead length. absolute ratings (limiting values) i f(av) 3a v rrm 200 v tj (max) 150 c v f (max) 0.85 v trr (max) 35 ns main product characteristics BYW98-200 high efficiency fast recovery rectifier diodes dimensions in inches and (millimeters) do-201ad http://www.luguang.cn mail:lge@luguang.cn
symbol parameter test conditions min. typ. max. unit i r * reverse leakage current t j = 25 cv r = v rrm 10 m a t j = 100 c 0.5 ma v f ** forward voltage drop t j = 25 ci f = 9a 1.2 v t j = 100 ci f = 3a 0.78 0.85 pulse test : * tp = 5 ms, d < 2 % ** tp = 380 m s, d < 2 % to evaluate the conduction losses use the following equations: p = 0.75 x i f(av) + 0.04 i f 2 (rms) static electrical characteristics symbol test conditions min. typ. max. unit t rr t j = 25 ci f = 1a di f /dt = - 50a/ m s v r = 30v 35 ns q rr t j = 25 ci f = 3a di f /dt = - 20a/ m s v r 30v 15 nc t fr t j = 25 ci f = 3a di f /dt = - 50a/ m s measured at 1.1 x v f max 20 ns v fp t j = 25 ci f = 3a di f /dt = - 50a/ m s 5v recovery characteristics symbol parameter value unit rth (j-a) junction-ambient * 25 c/w * on infinite heatsink with 10mm lead length. thermal resistance BYW98-200 high efficiency fast recovery rectifier diodes http://www.luguang.cn mail:lge@luguang.cn
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 pf(av)(w) d = 0.2 d = 0.5 d = 1 d = 0.05 d = 0.1 if(av) (a) t d =tp/t tp fig. 1: average forward power dissipation versus average forward current. 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 if(av)(a) rth(j-a)=75c/w rth(j-a)=rth(j-l) tamb(c) t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d =0.5). 5 1 01 52 02 5 0 10 20 30 40 50 60 70 80 90 rth(c/w) rth(j-a) rth(j-l) lleads(mm) fig. 3: thermal resistance versus lead length. 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.10 1.00 zth(j-a)/rth(j-a) tp(s) t d =tp/t tp d = 0.5 d = 0.2 d = 0.1 single pulse fig. 4: variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, epoxy fr4, e(cu)=35 m m). 1 10 100 200 10 20 50 100 c(pf) f=1mhz tj=25c vr(v) fig. 6: junction capacitance versus reverse voltage applied (typical values). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.10 1.00 10.00 70.00 ifm(a) tj=100c (typical values) tj=25c tj=100c vfm(v) fig. 5: forward voltage drop versus forward current (maximum values). BYW98-200 high efficiency fast recovery rectifier diodes http://www.luguang.cn mail:lge@luguang.cn
1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 irm(a) if=3a 90% confidence tj=100c tj=25c tj=100c dif/dt(a/s) fig. 8: peak reverse recovery current versus di f /dt. 1 10 100 0 20 40 60 80 100 trr(ns) if=3a 90% confidence tj=100c tj=25c tj=100c dif/dt(a/s) fig. 7: reverse recovery time versus di f /dt. 25 50 75 100 125 150 100 150 200 250 % irm qrr trr if=3a dif/dt=50a/s vr=30v tj(c) fig. 9: dynamic parameters versus junction temperature. BYW98-200 high efficiency fast recovery rectifier diodes http://www.luguang.cn mail:lge@luguang.cn
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