specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 1 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 3 volt, general purpose low noise high f t silicon transistor mp4t6325 series features ? low voltage operation (3 - 5v) ? high ft (11 ghz) ? low noise figure with 1-5 ma current ? inexpensive ? available on tape and reel description the mp4t6325 series of low voltage silicon bipolar transistors provide low noise figure at a bias of 3-5 volts and collector current of 1 to 5 ma. these inexpensive surface mount transistors are useful for low noise amplifiers and vcos in portable battery operated rf systems from vhf through 2.5 ghz. the mp4t6325 series has high f t (11 ghz) and provides 1.5 db noise figure with 1-5 ma current and 3 volts bias at 1 ghz. these transistors also have low phase noise when used in 3-5 volt low power battery operated vcos through 2.5 ghz. the mp4t6325 series are inexpensive transistors useful for portable battery operated rf systems that require low current drain from 3-5 volts dc supplies. the mp4t6325 family of transistors is available in chip (mp4t632500), sot-23 (mp4t632533), sot-143 (mp4t632539) and in micro-x (MP4T632535) packages. surface mount packages are available on tape and reel. sot-23 sot-143 chip
3 volt, general purpose low noise high f t silicon transistor specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 2 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 mp4t6325 series electrical specifications at 25 c symbol parameters test conditions units mp4t632500 chip mp4t632533 sot-23 MP4T632535 micro-x mp4t632539 sot-143 f t gain bandwidth product v ce = 3v i c = 10 ma ghz 11 typ. 10 typ. 11 typ. 11 typ. |s 21e | 2 insertion power gain v ce = 3v i c = 10 ma f = 1 ghz f = 2 ghz db 12 typ. 8 typ. 11 typ. 7 typ. 12 typ. 8 typ. 11 typ. 7 typ. nf noise figure v ce = 3v i c = 2 ma f = 1 ghz db 1.5 typ. 1.6 typ. 1.5 typ. 1.6 typ. gtu (max) unilateral gain v ce = 3v i c = 10 ma f = 1 ghz f = 2 ghz db 14.5 typ. 9 typ. 13 typ. 8 typ. 14.5 typ. 9 typ. 13 typ. 8 typ. mag maximum available gain v ce = 3v i c = 10 ma f = 2 ghz db 10 typ. 9 typ. 10 typ. 9 typ. p 1db power out at 1db compression v ce = 3v i c = 15 ma f = 900mhz dbm 8 typ. 8 typ. 8 typ. 8 typ. r th (j-a) thermal resistance junction/ ambient c/w ? 650 typ. 500 typ. 625 typ. r th (j-c) thermal resistance junction/ case c/w 70 max. 1 200 typ. 200 typ. 200 typ. 1. junction/heat sink r th (j-c) maximum ratings at 25 c parameter symbol maximum rating collector base voltage v cbo 8 v collector-emitter voltage v ceo 6 v emitter-base voltage v ebo 1.5 v collector current i c 25 ma junction temperature t j 200 c storage temperature chips or ceramic packages t stg -65 c to +200 c plastic packages -65 c to +125 c power dissiapation p d 150mw 1 1. see typical performance curves for power derating. electrical specifications at 25 c parameters conditions symbol min. typ. max. units collector cut-off current v cb = 5 v i e = 0 i cbo ? ? 100 na emitter cut-off current v eb = 1 v i c = 0 i ebo ? ? 1 a forward current gain v ce = 3 v i c = 3 ma h fe 20 90 200 ? collector base junction capacitance v cb = 3 v i e = 0 f = 1 mhz c ob ? 0.52 0.70 pf
3 volt, general purpose low noise high f t silicon transistor specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 3 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 mp4t6325 series MP4T632535 typical scattering parameters in the micro-x package v ce = 3 volts, i c = 5 ma frequency s 11e s 21e s 12e s 22e (mhz) mag. angle mag. angle mag. angle mag angle 500 0.486 -80.5 7.164 119.8 0.077 56.6 0.628 -45.8 1000 0.338 -128.0 4.508 93.4 0.112 51.9 0.424 -58.8 1500 0.294 -156.3 3.219 78.1 0.144 50.2 0.345 -65.9 2000 0.284 169.8 2.533 66.1 0.179 47.8 0.305 -74.9 2500 0.283 160.9 2.123 55.5 0.210 44.7 0.280 -83.1 3000 0.281 144.6 1.835 46.3 0.240 41.8 0.266 -90.8 3500 0.290 132.5 1.678 36.8 0.272 36.7 0.256 -103.7 4000 0.320 119.4 1.546 28.3 0.301 33.2 0.254 -113.8 4500 0.333 106.6 1.434 18.9 0.323 29.0 0.245 -125.4 5000 0.358 94.9 1.354 11.5 0.349 25.1 0.241 -135.9 5500 0.382 82.7 1.290 4.0 0.375 21.4 0.246 -146.1 6000 0.405 72.7 1.238 -4.0 0.397 17.7 0.255 -158.0 v ce = 3 volts, i c = 10 ma frequency s 11e s 21e s 12e s 22e (mhz) mag. angle mag. angle mag. angle mag angle 500 0.326 -116.9 8.628 108.6 0.060 60.9 0.505 -48.5 1000 0.288 -158.6 4.808 86.7 0.098 60.0 0.351 -56.2 1500 0.288 174.6 3.337 73.4 0.135 57.7 0.302 -61.8 2000 0.305 160.8 2.608 62.3 0.170 53.7 0.275 -71.7 2500 0.319 145.8 2.172 52.2 0.204 49.7 0.256 -80.2 3000 0.330 131.0 1.863 43.2 0.234 45.8 0.245 -88.1 3500 0.335 121.4 1.696 34.5 0.268 41.0 0.245 -101.8 4000 0.372 110.2 1.559 25.9 0.299 36.8 0.245 -112.9 4500 0.385 99.4 1.444 16.9 0.322 32.7 0.240 -125.3 5000 0.417 88.6 1.361 9.4 0.350 28.3 0.237 -136.8 5500 0.445 77.1 1.294 3.2 0.379 24.1 0.242 -148.0 6000 0.468 67.4 1.236 -6.0 0.401 20.3 0.253 -160.2 v ce = 3 volts, i c = 15 ma frequency s 11e s 21e s 12e s 22e (mhz) mag. angle mag. angle mag. angle mag angle 500 0.286 -136.7 9.912 104.1 0.053 65.0 0.428 -50.5 1000 0.278 -173.6 5.355 84.5 0.092 64.6 0.295 -55.5 1500 0.287 168.5 3.679 72.6 0.132 60.8 0.263 -60.3 2000 0.317 149.8 2.875 61.7 0.165 56.6 0.236 -70.3 2500 0.334 135.8 2.377 52.0 0.200 52.2 0.222 -77.5 3000 0.354 121.6 2.029 43.0 0.230 47.7 0.215 -84.3 3500 0.355 112.4 1.834 34.6 0.265 42.7 0.218 -97.2 4000 0.382 100.2 1.653 26.7 0.290 38.9 0.220 -103.8 4500 0.408 92.3 1.552 17.3 0.317 34.1 0.218 -117.6 5000 0.440 82.1 1.456 10.0 0.344 29.7 0.213 -127.1 5500 0.471 71.3 1.377 2.2 0.372 25.2 0.212 -137.0 6000 0.492 62.2 1.312 -5.5 0.392 21.3 0.218 -147.9
3 volt, general purpose low noise high f t silicon transistor specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 4 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 mp4t6325 series typical performance curves (MP4T632535) power derating curves 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 am bient tem perature (c) power dissipation (mw) m p4t632500 (chip) on infinite heat sink m p4t632535 (m icro -x) m p4t632533, 39 (so t-23, 143) free air gain vs frequency at vce=3 v and ic = 10 ma 0 2 4 6 8 10 12 14 16 1 10 frequency (ghz) gain (db) gtu (m ax) |s 21e | 2 gain bandwidth product (f t ) vs collector current at vce=3 v 0 2 4 6 8 10 12 1 10 100 collector current (ma) gain bandwidth (ghz ) noise figure and associated gain at vce = 3 v, 1 ghz vs collector current 0 1 2 3 4 5 6 7 8 9 10 110100 collector current (ma) noise figure (db) associated gain (db ) noise figure (50 ohms) associated gain nf (opt) collector-base capacitance (c ob ) vs collector-base voltage 0.4 0.45 0.5 0.55 0.6 0.65 1 10 collector-base voltage (volts) coll.-base capacitance (pf ) gain vs collector current at 2 ghz, vce=3 v 0 2 4 6 8 10 12 110100 collector current (ma) gain (db) mag gtu (m ax) |s 21e | 2
3 volt, general purpose low noise high f t silicon transistor specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 5 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 mp4t6325 series typical performance curves (MP4T632535) cont. dc current gain (h fe ) vs collector current at vce = 3 v 40 50 60 70 80 90 100 0 5 10 15 20 25 collector current (ma) dc current gain output power at 1 db compression point vs collector current vce=3v 0 2 4 6 8 10 12 5 1015202530 collector current (ma) p out - 1db (dbm) f = 900 m hz f = 2 gh z
3 volt, general purpose low noise high f t silicon transistor specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 6 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 mp4t6325 series case styles chip - mp4t632500 base emitter d thickness a c 2 plcs. b sot-23 - mp4t632533 f d h j a g l c e b k n m collector emitter base mp4t632500 dim. inches (nominal) mm (nominal) a 0.013 0.35 b 0.013 0.35 c 0.0016 0.040 d 0.0045 0.11 mp4t632533 inches millimeters dim. min. max. min. max. a ? 0.048 ? 1.22 b ? 0.008 ? 0.20 c ? 0.040 ? 1.00 d 0.013 0.020 0.35 0.50 e 0.003 0.006 0.08 0.15 f 0.110 0.119 2.80 3.00 g 0.047 0.056 1.20 1.40 h 0.037 typical 0.95 typical j 0.075 typical 1.90 typical k ? 0.103 ? 2.60 l ? 0.024 ? 0.60 dim. gradient m 10 max. 1 n 2 . . . 30 note: 1. applicable on all sides
3 volt, general purpose low noise high f t silicon transistor specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 7 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 mp4t6325 series case styles (con?t) micro-x - MP4T632535 collector emitter b e f 4 plcs. c g base h emitter d a sot-143 - mp4t632539 g j e k a h m c f b l p n collector emitter emitter base d MP4T632535 inches millimeters dim. min. max. min. max. a 0.092 0.108 2.34 2.74 b 0.079 0.087 2.01 2.21 c ? 0.070 ? 1.78 d 0.019 0.025 0.48 0.64 e 0.018 0.022 0.046 0.56 f 0.150 ? 3.81 ? g 0.003 0.006 0.08 0.15 h 45 45 mp4t632539 inches millimeters dim. min. max. min. max. a ? 0.044 ? 1.10 b ? 0.044 ? 1.10 c ? 0.040 ? 1.00 d 0.030 0.035 0.75 0.90 e 0.013 0.020 0.35 0.50 f 0.003 0.006 0.08 0.15 g 0.110 0.119 2.80 3.00 h 0.047 0.056 1.20 1.40 j 0.075 typical 1.90 typical k 0.075 typical 1.90 typical l ? 0.103 ? 2.6 m ? 0.024 ? 0.6 dim. gradient n 10 max. 1 p 2 . . . 30 note: 1. applicable on all sides
3 volt, general purpose low noise high f t silicon transistor specification subject to change without notice m-pulse microwave____________________________________________________________________________________ 8 576 charcot avemue, san jose, california 95131 tel (408) 432-1480 fax (408)) 432-3440 mp4t6325 series
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