BFP640 mar-01-2004 1 npn silicon germanium rf transistor BFP640e/l6327 and e/l7764 ? high gain low noise rf transistor ? provides outstanding performance for a wide range of wireless applications ? ideal for cdma and wlan applications ? outstanding noise figure f = 0.65 db at 1.8 ghz outstanding noise figure f = 1.3 db at 6 ghz ? high maximum stable gain g ms = 24 db at 1.8 ghz ? gold metallization for extra high reliability ? 70 ghz f t -silicon germanium technology ? l6327 and l7764 are early pb-free vps05605 4 2 1 3 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package BFP640 r4s 1=b 2=e 3=c 4=e - - sot343 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 4 v collector-emitter voltage v ces 13 collector-base voltage v cbo 13 emitter-base voltage v ebo 1.2 collector current i c 50 ma base current i b 3 total power dissipation 1) t s 90c p tot 200 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 1 t s is measured on the collector lead at the soldering point to the pcb
BFP640 mar-01-2004 2 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 300 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4 4.5 - v collector-emitter cutoff current v ce = 13 v, v be = 0 i ces - - 30 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 3 a dc current gain i c = 30 ma, v ce = 3 v h fe 100 180 320 - 1 for calculation of r thja please refer to application note thermal resistance
BFP640 mar-01-2004 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 30 ma, v ce = 3 v, f = 1 ghz f t 30 40 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz c cb - 0.09 0.2 pf collector emitter capacitance v ce = 3 v, f = 1 mhz c ce - 0.23 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 0.5 - noise figure i c = 5 ma, v ce = 3 v, f = 1.8 ghz, z s = z sopt i c = 5 ma, v ce = 3 v, f = 6 ghz, z s = z sopt f - - 0.65 1.3 - - db power gain, maximum stable 1) i c = 30 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 24 - db power gain, maximum available 1) i c = 30 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 6 ghz g ma - 12.5 - db transducer gain i c = 30 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz i c = 30 ma, v ce = 3 v, z s = z l = 50 ? , f = 6 ghz | s 21e | 2 - - 21 10.5 - - db third order intercept point at output 2) v ce = 3 v, i c = 30 ma, f = 1.8 ghz, z s = z l = 50 ? ip 3 - 26.5 - dbm 1db compression point at output i c = 30 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz p -1db - 13 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
BFP640 mar-01-2004 4 spice parameter (gummel-poon model, berkley-spice 2g.6 syntax): transitor chip data: is = 0.22 fa vaf = 1000 v ne = 2- var = 2v nc = 1.8 - rbm = 2.707 ? cje = 227.6 ff tf = 1.8 ps itf = 0.4 a vjc = 0.6 v tr = 0.2 ns mjs = 0.27 - xti = 3- af = 2 - titf1 -0.0065 - nf = 1.025 - ise = 21 fa nr = 1- isc = 400 fa irb = 1.522 ma rc = 3.061 ? mje = 0.3 - vtf = 1.5 v cjc = 67.43 ff xcjc = 1- vjs = 0.6 v eg = 1.078 ev tnom 298 k bf = 450 - ikf = 0.15 a br = 55 - ikr = 3.8 ma rb = 3.129 ? re = 0.6 - vje = 0.8 v xtf = 10 - ptf = 0 deg mjc = 0.5 - cjs = 93.4 ff xtb = -1.42 - fc = 0.8 kf = 7.291e-11 titf2 1.0e-5 all parameters are ready to use, no scalling is necessary. extracted on behalf of infineon technologies ag by: institut fr mobil- und satellitentechnik (imst) package equivalent circuit:
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" # lbc = 120 ph lcc = 120 ph lec = 20 ph lbb = 696.2 ph lcb = 682.4 ph leb = 230.6 ph cbec = 98.4 ff cbcc = 55.9 ff ces = 180 ff cbs = 79 ff ccs = 75 ff cceo = 131.2 ff cbeo = 102.5 ff ccei = 112.6 ff cbei = 180.4 ff rbs = 1200 ? rcs = 1200 ? res = 300 ? for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http//www.infineon.com/silicondiscretes valid up to 6ghz
BFP640 mar-01-2004 5 total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 20 40 60 80 100 120 140 160 180 mw 220 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 collector-base capacitance c cb = ? ( v cb ) f = 1mhz 0 2 4 6 8 10 v 14 v cb 0 0.05 0.1 0.15 pf 0.25 c cb
BFP640 mar-01-2004 6 third order intercept point ip 3 = ? ( i c ) (output, z s =z l =50 ? ) v ce = parameter, f = 1.8 ghz 0 10 20 30 40 ma 60 i c 0 3 6 9 12 15 18 21 24 dbm 30 i p3 2v 3v 4v transition frequency f t = ? ( i c ) f = 1ghz v ce = parameter 0 10 20 30 40 ma 60 i c 0 5 10 15 20 25 30 35 ghz 45 f t 3v 2v 1v 0.5v power gain g ma , g ms = ? ( i c ) v ce = 3v f = parameter 0 10 20 30 40 ma 60 i c 10 12 14 16 18 20 22 24 26 db 30 g 0.9ghz 1.8ghz 2.4ghz 3ghz 4ghz 5ghz 6ghz power gain g ma , g ms = ? ( f ), | s 21 |2 = f (f) v ce = 3v, i c = 30ma 0 1 2 3 4 ghz 6 f 10 15 20 25 30 35 40 45 db 55 g gms gma |s21|2
BFP640 mar-01-2004 7 power gain g ma , g ms = ? ( v ce ) i c = 30ma f = parameter 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v ce 0 5 10 15 20 db 30 g 0.9ghz 1.8ghz 2.4ghz 3ghz 4ghz 5ghz 6ghz noise figure f = ? ( i c ) v ce = 3v, z s = z sopt 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 f [db] i c [ma] f = 5ghz f = 0.9ghz f = 1.8ghz f = 4ghz f = 6ghz f = 2.4ghz f = 3ghz noise figure f = ? ( i c ) v ce = 3v, f = 1.8 ghz 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 i c [ma] f [db] z s = 50 ? z s = z sopt noise figure f = ? ( f ) v ce = 3v, z s = z sopt 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 f [db] f [ghz] i c = 30ma i c = 5.0ma
BFP640 mar-01-2004 8 source impedance for min. noise figure vs. frequency v ce = 3 v, i c = 5 ma/ 30 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 5 1 ?5 ?1 10 ?10 0.5 1.5 ?0.5 ?1.5 0.1 ?0.1 0.2 2 ?0.2 ?2 0.3 ?0.3 0.4 3 ?0.4 ?3 4 ?4 3ghz i c = 5.0ma 1.8ghz 6ghz 5ghz 0.9ghz i c = 30ma 4ghz 2.4ghz
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