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jmnic product specification silicon npn power transistors 2SC1827 description ? with to-220 package ? complement to type 2sa769 ? collector current :i c =4a ? collector dissipation :p c =30w@t c =25 ?? applications ? for use in low frequency power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 4 a p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220) and symbol
jmnic product specification 2 silicon npn power transistors 2SC1827 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ;i b =0 80 v v (br)cbo collector-base breakdown voltage i c =0.1ma ;i e =0 80 v v (br)ebo emitter-base breakdown voltage i e =0.1ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =3a; i b =0.3a 1.0 v v besat base-emitter saturation voltage i c =3a ;i b =0.3a 1.5 v i cbo collector cut-off current v cb =80v;i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe dc current gain i c =1a ; v ce =4v 60 240 f t transition frequency i c =0.5a ; v ce =2v 8 mhz
jmnic product specification 3 silicon npn power transistors 2SC1827 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)

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