any changing of specification will not be informed individual pzt1 94 npn transistor silicon planar medium power transistor r o h s c o m p l i a n t p r o d u c t h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e t h e p z t 194 is designed for medium power amplifier applications. d e s c r i p t i o n * 1 amps continous current * 60 volt vceo * complementary to pzt195 f e atures e l e c t r i c a l c h a r a c t e r i s t i c s t a m b = 2 5 u n l e s s o t h e r w i s e s p e c i f i e d p a r a m e t e r s y m b o l m i n t y p . m a x u n i t e s t c o n d i t i o n s c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e b v c b o - - v i c = 1 0 0 m a , i e = 0 i c = 1 0 m a , i b = 0 i e = 1 0 0 m a , i c = 0 v c b = 6 0 v , i e = 0 v e b = c = 0 i c = v c e = v , i c = v c e = v , i c = 5 0 m a , v c b = 1 0 , f = 1 m h z , i e = 0 , f = 1 0 0 m h z * b v c e o 6 0 - - v b v e b o - - v i c b o - - 1 0 0 n a i e b o - - n a * v c e ( s a t ) 1 - * v c e ( s a t ) 2 - - - * v b e ( s a t ) v * v b e ( o n ) v * h f e 1 - * h f e 2 3 0 0 * h f e 3 - * h f e 4 - f t 1 5 0 - m h c o b - - p f z c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e e m i t t e r - b a s e b r e a k d o w n v o l t a g e c o l l e c t o r - b a s e c u t o f f c u r r e n t e m i t t e r - b a s e c u t o f f c u r r e n t c o l l e c t o r s a t u r a t i o n v o l t a g e b a s e s a t u r a t i o n v o l t a g e b a s e - e m i t t e r v o l t a g e d c c u r r e n t g a i n g a i n - b a n d w i d t h p r o d u c t o u t p u t c a p a c i t a n c e t 8 0 5 1 0 0 1 0 0 8 0 3 0 1 0 0 0 . 2 5 0 . 5 1 . 1 1 . 0 1 0 v 4 v , i 5 0 0 m a , i b = 5 0 m a i c = 1 a , i b = 1 0 0 m a i c = 1 a , i b = 1 0 0 m a i c = 1 a , v c e = 5 v 5 1 m a v c e = v , i c = 5 5 0 0 m a v c e = v , i c = 5 1 a v c e = v , i c = 5 2 a 1 0 v c c o l l e c t o r - b a s e c u t o f f c u r r e n t i c e s - 1 0 0 n a - - - - - - - - - - v c e s = 6 0 v o m a x i m u m r a t i n g s * ( t a m b = 2 5 , u n l e s s o t h e r w i s e s p e c i f i e d ) c o s y m b o l p a r a m e t e r v a l u e c o l l e c t o r c u r r e n t ( d c ) 2 5 2 5 5 ~ + 1 5 0 6 0 8 0 1 i c t s t g t j , j u n c t i o n a n d t o t a l p o w e r d i s s i p a t i o n v e b o p d e m i t t e r - b a s e v o l t a g e v a w s t o r a g e t e m p e r a t u r e - c o v c e o c o l l e c t o r - e m i t t e r v o l t a g e v v c b o c o l l e c t o r - b a s e v o l t a g e v u n i t s c o l l e c t o r c u r r e n t ( p u l s e ) 5 1 . 4 0 1 . 8 0 m i l l i m e t e r m i l l i m e t e r i b b a s e c u r r e n t 2 0 0 m a sot-223 0 1 - j u n - 2 0 0 2 r e v . a page 1 of 2 ref. min. max. ref. min. max. a 6.70 7.30 b 13 c typ. c 2.90 3.10 j 2.30 ref. d 0.02 0.10 1 6.30 6.70 e 0 c 10 c 2 6.30 6.70 i 0.60 0.80 3 3.30 3.70 h 0.25 0.35 4 3.30 3.70 1 9 4 d a t e c o d e b c e * m e a s u r e d u n d e r p u l s e c o n d i t i o n . p u l s e w i d t h 3 0 0 s , d u t y c y c l e 2 % ?? ?? m
c h a r a c t e r i s t i c s c u r v e any changing of specification will not be informed individual http://www.secosgmbh.com 01-jun-2002 rev. a page 2 of 2 pzt 1 94 np n transistor silicon planar medium power transistor elektronische bauelemente
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