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1. product pro?le 1.1 general description pnp low v cesat transistor in a sot457 (sc-74) plastic package. 1.2 features n sot457 package n low collector-emitter saturation voltage v cesat n high collector current capability i c and i cm n high ef?ciency leading to less heat generation. 1.3 applications n major application segments: u automotive 42 v power u telecom infrastructure u industrial. n peripheral driver: u driver in low supply voltage applications (e.g. lamps and leds) u inductive load driver (e.g. relays, buzzers and motors). n dc-to-dc converter. 1.4 quick reference data PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor rev. 01 11 june 2004 objective data sheet table 1: quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage - - - 100 v i c collector current (dc) - - - 1a i cm peak collector current - - - 3a r cesat equivalent on-resistance - - 320 m w
9397 750 12842 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 01 11 june 2004 2 of 13 philips semiconductors PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking [1] made in malaysia. table 2: discrete pinning pin description simpli?ed outline symbol 1, 2, 5, 6 collector 3 base 4 emitter sot457 1 2 3 6 5 4 sym030 1, 2, 5, 6 4 3 table 3: ordering information type number package name description version PBSS9110D - plastic surface mounted package; 6 leads sot457 table 4: marking type number marking code PBSS9110D a7 [1]
9397 750 12842 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 01 11 june 2004 3 of 13 philips semiconductors PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor 5. limiting values [1] device mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, standard footprint. [2] device mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, 1 cm 2 collector mounting pad. [3] device mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, 6 cm 2 collector mounting pad. table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - - 120 v v ceo collector-emitter voltage open base - - 100 v v ebo emitter-base voltage open collector - - 5v i cm peak collector current t j(max) - - 3a i c collector current (dc) - - 1a i b base current (dc) - - 0.3 a p tot total power dissipation t amb 25 c [1] - 300 mw t amb 25 c [2] - 550 mw t amb 25 c [3] - 700 mw t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c (1) fr4 pcb; 6 cm 2 collector mounting pad. (2) fr4 pcb; 1 cm 2 collector mounting pad. (3) fr4 pcb; standard footprint. fig 1. power derating curves. t amb ( c) 0 160 120 40 80 001aaa493 400 200 600 800 p tot (mw) 0 (3) (2) (1)
9397 750 12842 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 01 11 june 2004 4 of 13 philips semiconductors PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, standard footprint. [2] device mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, 1 cm 2 collector mounting pad. [3] device mounted on a fr4 printed-circuit board, single-sided copper, tin-plated, 6 cm 2 collector mounting pad. table 6: thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient in free air [1] 416 k/w [2] 227 k/w [3] 178 k/w r th(j-s) thermal resistance from junction to soldering in free air [1] 83 k/w mounted on a fr4 pcb; standard footprint. (1) d =1. (2) d = 0.75. (3) d = 0.5. (4) d = 0.33. (5) d = 0.2. (6) d = 0.1. (7) d = 0.05. (8) d = 0.02. (9) d = 0.01. (10) d =0. fig 2. transient thermal impedance as a function of pulse time; typical values. 001aaa818 10 1 10 2 10 3 z th (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10)
9397 750 12842 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 01 11 june 2004 5 of 13 philips semiconductors PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor mounted on a fr4 pcb; mounting pad for collector 1 cm 2 . (1) d =1. (2) d = 0.75. (3) d = 0.5. (4) d = 0.33. (5) d = 0.2. (6) d = 0.1. (7) d = 0.05. (8) d = 0.02. (9) d = 0.01. (10) d =0. fig 3. transient thermal impedance as a function of pulse time; typical values. 001aaa819 10 1 10 2 10 3 z th (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10)
9397 750 12842 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 01 11 june 2004 6 of 13 philips semiconductors PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 7: characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb = - 80 v; i e =0a - - - 100 na v cb = - 80 v; i e = 0 a; t j = 150 c-- - 50 m a i ces collector-emitter cut-off current v ce = - 80 v; i be =0a - - - 100 na i ebo emitter-base cut-off current v eb = - 4 v; i c =0a - - - 100 na h fe dc current gain v ce = - 5 v; i c = - 1 ma 150 - - v ce = - 5 v; i c = - 250 ma 150 - - v ce = - 5 v; i c = - 0.5 a [1] 150 - 450 v ce = - 5 v; i c = - 1a [1] 125 - - v cesat collector-emitter saturation voltage i c = - 250 ma; i b = - 25 ma - - - 120 mv i c = - 500 ma; i b = - 50 ma - - - 180 mv i c = - 1 a; i b = - 100 ma - - - 320 mv r cesat equivalent on-resistance i c = - 1 a; i b = - 100 ma [1] - 170 320 m w v besat base-emitter saturation voltage i c = - 1 a; i b = - 100 ma - - - 1.1 v v beon base-emitter turn-on voltage i c = - 1 a; v ce = - 5v - - - 1.0 v f t transition frequency i c = - 50 ma; v ce = - 10 v; f = 100 mhz 100 - - mhz c c collector capacitance i e =i e = 0 a; v cb = - 10 v; f = 1 mhz - - 17 pf
philips semiconductors PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor 9397 750 12842 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 01 11 june 2004 7 of 13 v ce = - 10 v. (1) t amb = 100 c. (2) t amb =25 c. (3) t amb = - 55 c. v ce = - 10 v. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 100 c. fig 4. dc current gain as a function of collector current; typical values. fig 5. base-emitter voltage as a function of collector current; typical values. i c /i b = 10. (1) t amb = 100 c. (2) t amb =25 c. (3) t amb = - 55 c. t amb =25 c. (1) i c /i b = 50. (2) i c /i b = 20. fig 6. collector-emitter saturation voltage as a function of collector current; typical values. fig 7. collector-emitter saturation voltage as a function of collector current; typical values. 001aaa376 200 400 600 h fe 0 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 001aaa377 - 0.4 - 0.8 - 1.2 v be (v) 0 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 001aaa378 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 10 - 1 - 1 v cesat (v) - 10 - 2 (1) (2) (3) 001aaa380 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 10 - 1 - 1 v cesat (v) - 10 - 2 (1) (2)
philips semiconductors PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor 9397 750 12842 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 01 11 june 2004 8 of 13 i c /i b = 10. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 100 c. i c /i b = 20. t amb =25 c. fig 8. base-emitter saturation voltage as a function of collector current; typical values. fig 9. base-emitter saturation voltage as a function of collector current; typical values. i c /i b = 10. (1) t amb = - 55 c. (2) t amb =25 c. (3) t amb = 100 c. t amb =25 c. (1) i c /i b = 50. (2) i c /i b = 20. fig 10. equivalent on-resistance as a function of collector current; typical values. fig 11. equivalent on-resistance as a function of collector current; typical values. 001aaa381 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 1 - 10 v besat (v) - 10 - 1 (1) (2) (3) 001aaa379 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 - 1 - 10 v besat (v) - 10 - 1 001aaa382 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 1 10 10 2 10 3 rcesat ( w ) 10 - 1 (1) (2) (3) 001aaa383 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 1 10 10 2 10 3 rcesat ( w ) 10 - 1 (1) (2)
9397 750 12842 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 01 11 june 2004 9 of 13 philips semiconductors PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor (1) i b = - 45 ma. (2) i b = - 40.5 ma. (3) i b = - 36 ma. (4) i b = - 31.5 ma. (5) i b = - 27 ma. (6) i b = - 22.5 ma. (7) i b = - 18 ma. (8) i b = - 13.5 ma. (9) i b = - 9 ma. (10) i b = - 4.5 ma. fig 12. collector current as a function of collector-emitter voltage; typical values. v ce (v) 0 - 5 - 4 - 2 - 3 - 1 001aaa384 - 0.8 - 1.2 - 0.4 - 1.6 - 2 i c (a) 0 (1) (2) (8) (10) (9) (3) (6) (7) (4) (5)
9397 750 12842 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 01 11 june 2004 10 of 13 philips semiconductors PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor 8. package outline fig 13. package outline. references outline version european projection issue date iec jedec eiaj sot457 sc-74 wb m b p d e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface mounted package; 6 leads sot457 unit a 1 b p cd e h e l p qy w v mm 0.1 0.013 0.40 0.25 3.1 2.7 0.26 0.10 1.7 1.3 e 0.95 3.0 2.5 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.6 0.2 0.33 0.23 a 1.1 0.9 97-02-28 01-05-04
9397 750 12842 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 01 11 june 2004 11 of 13 philips semiconductors PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor 9. revision history table 8: revision history document id release date data sheet status change notice order number supersedes PBSS9110D_1 20040611 objective data - 9397 750 12842 -
philips semiconductors PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor 9397 750 12842 ? koninklijke philips electronics n.v. 2004. all rights reserved. objective data sheet rev. 01 11 june 2004 12 of 13 10. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 12. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 13. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2004 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 11 june 2004 document order number: 9397 750 12842 published in the netherlands philips semiconductors PBSS9110D 100 v, 1 a pnp low v cesat (biss) transistor 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 10 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 11 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 contact information . . . . . . . . . . . . . . . . . . . . 12

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