ksc2331 ? npn epitaxial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com ksc2331 rev. b0 1 december 2011 ksc2331 npn epitaxial silicon transistor features ? low frequency amplifier & medium speed switching ? complement to ksa931 ? high collector-base voltage : v cbo =80v ? collector current : i c =700ma ? collector dissipation : p c =1w absolute maximum ratings t a = 25c unless otherwise noted electrical characteristics t a = 25c unless otherwise noted h fe classification symbol parameter value units v cbo collector-base voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 8 v i c collector current 700 ma p c collector power dissipation 1 w t j junction temperature 150 c t stg storage temperature -55 to 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =100 a, i e =0 80 v bv ceo collector-emitter breakdown voltage i c =10ma, i b =0 60 v bv ebo emitter-base breakdown voltage i e =10 a, i c =0 8 v i cbo collector cut-off current v cb =60v, i e =0 0.1 a i ebo emitter cut-off current v eb =5v, i c =0 0.1 a h fe dc current gain v ce =2v, i c =50ma 40 240 v ce (sat) collector-emitter saturation voltage i c =500ma, i b =50ma 0.2 0.7 v v be (sat) base-emitter saturation voltage i c =500ma, i b =50ma 0.86 1.20 v classification r o y h fe 40 ~ 80 70 ~ 140 120 ~ 240 to-92l 1 1. emitter 2. collector 3. base
ksc2331 ? npn epitaxial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com ksc2331 rev. b0 2 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage collector-emitter sa turation voltage figure 4. base-emitter on voltage figure 5. safe operating area figure 6. power derating 0 5 10 15 20 25 30 35 40 45 50 55 0 20 40 60 80 100 120 140 160 180 200 i b = 1.2ma i b = 0.2ma i b = 1.4ma i b = 1.0ma i b = 0.8ma i b = 0.6ma i b = 0.4ma i c [ma], collector current v ce [v], collector-emitter voltage 1 10 100 1000 0 40 80 120 160 200 240 v ce = 2v h fe , dc current gain i c [ma], collector current 1 10 100 1000 0.01 0.1 1 10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000 v ce = 2v i c [ma], collector current v be [v], base-emitter voltage 1 10 100 1000 10 100 1000 10000 1. t a = 25 o c 2. *single pulse d c * 200ms i c [ma], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 p c [w], power dissipation t a [ o c], amibient temperature
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