View JAN2N3811L_5915039.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

mil-prf-19500/396h 4 january 2002 superseding mil-prf-19500/396g 21 april 2000 performance specification semiconductor device, transistor , pnp, silicon, switching types 2n3762, 2n3762l, 2n3763, 2n3763l, 2n3764, and 2n3765 jan, jantx, jantxv, jans, janhc and jankc this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers t he performance requirements for pnp s ilicon switching transistors. four levels of product assurance are provided for each encaps ulated device type as specified in mil-prf-19500 and two levels of product assurance are prov ided for each unencapsulated device type. 1.2 physical dimensions . see figure 1, 2n3762l and 2n3763l (to-5), 2n3762 and 2n3763 (to-39), 2n3764 and 2n3765 (to - 46) and figure 2 (die) herein. 1.3 maximum ratings . types p t t a = +25 c v cbo v ceo v ebo i c t op and t stg r jc w v dc v dc v dc a dc c c/w 2n3762 2n3762l 2n3763 2n3763l 2n3764 2n3765 1.0 (1) 1.0 (1) 1.0 (1) 1.0 (1) 0.5 (2) 0.5 (2) 40 40 60 60 40 60 40 40 60 60 40 60 5 5 5 5 5 5 1.5 1.5 1.5 1.5 1.5 1.5 -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 60 60 60 60 88 88 (1) derate linearly at 5.71 mw/ c above t a = +25 c. (2) derate linearly at 2.86 mw/ c above t a = +25 c. amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. inch-pound the documentation and process conv ersion measures necessary to comply with this document shall be completed by 4 april, 2002. beneficial comments (recommendations, additions, deleti ons) and any pertinent data which may be of use in improving this document should be addressed to: defens e supply center columbus, attn: dscc-vac, p. o. box 3990, columbus, oh 43216-5000, by using the standar dization document improv ement proposal (dd form 1426) appearing at the end of this document or by letter.
mil-prf-19500/396h 2 1.4 primary electrical characteristics t a = +25 c . (unless otherwise indicated, applies to all devices.). limits h fe1 v ce = 1.0 v dc; i c = 10 ma dc h fe3 v ce = 1.0 v dc; i c = 500 ma dc h fe5 (1) v ce = 5.0 v dc; i c = 1.5 a dc 2n3762 2n3762l 2n3764 2n3763 2n3763l 2n3765 min max 35 40 140 30 20 pulse response limits |h fe | f = 100 mhz v ce = 10 v dc i c = 50 ma dc v ce(sat)3 i c = 500 ma dc i b = 50 ma dc (1) c obo v ce = 10 v dc i e = 0 100 khz f 1 mhz see figure 3 see figure 4 2n3762 2n3764 2n3763 2n3765 t d t r t s t f v dc pf ns ns ns ns min 1.8 1.5 max 6.0 6.0 0.5 25 8 35 80 35 (1) pulsed (see 4.5.1). 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other secti ons of this specificati on or recommended for additional information or as examples. while every effort has been made to ensure t he completeness of this list, document users are cautioned that they must m eet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. un less otherwise specified, the issues of these documents are those listed in the issue of the department of def ense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devi ces, general specification for. standard department of defense mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above s pecifications, standards, and handbooks are available from the document automation and production services , building 4d (dpm-dodssp), 700 robbins avenue, philadelphia, pa 19111-5094.)
mil-prf-19500/396h 3 symbol to-5, 39 to-46 notes min max min max cd .305 .355 0.178 0.195 ch .240 .260 0.065 0.085 hd .355 .370 0.209 0.230 lc .200 tp 0.100 tp 4 ld .016 .021 0.016 0.021 4, 5 ll see notes 4, 5, 6, 7 lu .016 .021 0.016 0.021 5 l1 .050 0.050 5 l2 .250 0.250 5 tl .029 .045 0.028 0.048 2 tw .028 .034 0.036 0.046 p .100 q .040 3 r .010 0.007 2 a 45 tp 45 tp notes: 1. dimensions are in inches. 2. dimension tl measured from maximum hd. dim ension r (radius) applies to both inside corners of tab. 3. body contour optional within zone defined by hd, cd, and q. dimension p not applicable to to-46. 4. leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods or by the gauge and gauging procedure. 5. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 6. for to-5 packages, dimension ll shall be 1.5 inc hes (38.1) mm minimum and 1.75 inches (44.4 mm) maximum. 7. for to-39 and to-46 packages, dimension ll sha ll be 0.5 inches (12.7) mm minimum and 0.75 inches (19.0 mm) maximum. 8. in accordance with ansi y14.5m, diameters are equivalent to x symbology. 9. lead 1 = emitter, lead 2 = base, lead 3 = collector (internally connected to the case). figure 1. physical dimensions 2n3762l and 2n3763l (to - 5), 2n3762 and 2n3763 (to - 39), 2n3764 and 2n3765 (to - 46).
mil-prf-19500/396h 4 1. chip size .040 x .040 inch .001 inch. 2. chip thickness .010 .0015 inch. 3. top metal aluminum 15,000 ? minimum, 18,000 ? nominal. 4. back metal a. al/ti/ni/ag 12k ? /3k ? /7k ? /7k ? min.,15k ? /5k ? /10k ? /10k ? nominal. b. gold 2,500 ? minimum, 3,000 ? nominal. c. eutectic mount - no gold. 5. backside collector. 6. bonding pad b = .006 x .008 inch, e = .006 x .004 inch. figure 2. janhca and jankca die dimensions .
mil-prf-19500/396h 5 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. no thing in this document, howev er, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 general . the requirements for acquiring the product descr ibed herein shall consist of this document and mil-prf-19500. * 3.2 qualification . devices furnished under this specification s hall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis ting on the applicable qualified manufacturers list (qml) before contract award (see 4.2 and 6.3). 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500. 3.4 interface and physical dimensions . the interface and physical dimens ions shall be as specified in mil-prf-19500 and on figures 1 and 2 herein. 3.4.1 lead finish . lead finish shall be solderable as defined in mil-prf-19500, mil-std-750, and herein. where a choice of lead finish is desired, it sha ll be specified in the acquisition document (see 6.2). 3.5 electrical perfo rmance characteristics . unless otherwise specified, the el ectrical performance characteristics are as specified in 1.3, 1.4, and table i herein. 3.6 electrical test requirements . the electrical test requirements s hall be the subgroups specified in table i. 3.7 marking . devices shall be marked in accordance with mil-prf-19500. * 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from defects that will a ffect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specif ied herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2 qualification inspection . qualification inspection shall be in accordance with mil-prf-19500 and 6.3 herein. * 4.2.1 janhc and jankc qualification . janhc and jankc qualification inspection shall be in accordance with mil-prf-19500.
mil-prf-19500/396h 6 4.3 screening (jantx, jantxv and jans levels only) . screening shall be in accordance with table iv of mil-prf-19500, and as specified herein. the following m easurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see table iv of mil-prf-19500) measurement jans level jantx and jantxv level 1b required required (jantxv only) 2 optional optional 3a 3b (1) 3c required not applicable required method 3131. required not applicable required method 3131. 4 required optional 5 and 6 required not applicable (2) 7a and 7b required required 8 required not required 9 i cbo2 , h fe3 read and record not applicable 10 24 hours minimum 24 hours minimum 11 i cbo2 ; h fe3 ; ? i cbo2 = 100 percent of initial value or 10 na dc, whichever is greater. ? h fe3 = 15 percent i cbo2 ; h fe3 12 see 4.3.1, 240 hours minimum see 4.3.1, 80 hours minimum (3) 13 subgroups 2 and 3 of table i herein; ? i cbo2 = 100 percent of initial value or 10 na dc, whichever is greater; ? h fe3 = 15 percent subgroups 2 of table i herein; ? i cbo2 = 100 percent of initial value or 10 na dc, whichever is greater; ? h fe3 = 15 percent (2) 14a and 14b optional optional 15 and 16 not required not required (1) thermal impedance may be performed any time after s ealing provided temperature cycling is performed in accordance with mil-prf-19500, screen 3 prior to this thermal test. (2) hermeticity evaluation may be per formed in either step 7 or step 14. (3) pda = 5 percent for screen 13, applies to ? i cbo2 , ? h fe3 , i cbo2 ,h fe3 . thermal impedance (z jx ) is not required in screen 13.
mil-prf-19500/396h 7 * 4.3.1 power burn-in conditions . power burn-in conditions are as follows: v cb = 10-30 v dc; power shall be applied to achieve t j = +135 c minimum using a minimum power dissipation = 75 percent of maximum rated p t (see 1.3). note: no heat sink or forced air cooling on the devices shall be permitted. power burn-in conditions for "l" suffix devices are identical to thei r corresponding non-l suffix devices. 4.3.2. screening (janhc and jankc) . screening of janhc and jankc die shall be in accordance with mil-prf-19500, ?discrete semiconductor die/chip lot accept ance?. burn-in duration for the jankc level follows jans requirements; the janhc follows jantx requirements. 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500 and as specified herein. if alternate screening is being perfo rmed in accordance with mil-prf-19500, a sample of screened devices shall be submitted to and pass the require ments of group a1 and group a2 inspection only (table vib, group b, subgroup 1 is not required to be performed again if group b has already been satisfied in accordance with 4.4.2 herein). 4.4.1 group a inspection . group a inspection shall be conducted in accordance with table v of mil-prf-19500 and table i herein. 4.4.2 group b inspection . group b inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in table via (jans) of mil-prf-19500 and 4. 4.2.1 herein. electrical measurements (end-points) and delta requirements shall be in accordance with gr oup a, subgroup 2 and 4.5.2 herein except for thermal impedance. see 4.4.2.2 for jan, jant x, and jantxv group b testing. elec trical measurement s (end-points) and delta requirements for jan, jantx, and jantxv shall be a fter each step in 4.4.2.2 and shall be in accordance with group a, subgroup 2 and 4.5.2 herein except for thermal impedance. 4.4.2.1 group b inspection, table via (jans) of mil-prf-19500 . subgroup method conditions * b4 1037 v cb = 10 - 30 v dc. * b5 1027 (note: if a failure occurs, resubm ission shall be at the test conditions of the original sample.) v cb = 10 - 30 v dc, p d 100 percent of maximum rated p t (see 1.3). option 1: 96 hours minimum, sample size in accordance with table via of mil-prf-19500 adjust t a or p d to achieve t j = +275 c minimum. option 2: 216 hrs minimum, sample size = 45, c = 0; adjust t a or p d to achieve t j = +225 c minimum. * 4.4.2.2 group b inspection, table vib (jan, jantx, and jantxv) . 1 / step method condition 1 1039 steady-state life: test condition b, 340 hours, v cb = 10 - 30 v dc, t j = +150 c minimum. no heat sink or forced- air cooling on devices shall be permitted. n = 45, c = 0. 2 1039 the steady-state life test of step 1 shall be extended to 1,000 hours for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high-temperatur e life (non-operating). t a = +200 c, t = 340 hours, n = 22, c = 0. ________ 1 / separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new ?assembly lot? option is exerci sed, the failed assembly lot shall be scrapped.
mil-prf-19500/396h 8 4.4.2.3 group b sample selection . samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx, and jantxv samples shall be se lected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. fo r jans, samples shall be selected from each inspection lot. see mil-prf-19500. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups b4 and b5 for jans, and group b for jan, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection, group c inspection shall be conducted in acco rdance with the conditions specified for subgroup testing in table vii of mil-prf-19500, and in 4.4.3.1 (jans) and 4.4.3.2 (jan, jantx, and jantxv) herein for group c testing. electrical measurements (end-points) and delta requirements shall be in accordance with group a, subgroup 2 and 4.5.2 herein except for thermal impedance. 4.4.3.1 group c inspection, table vii (jans) of mil-prf-19500. subgroup method condition c2 2036 test condition e. * c6 1027 1,000 hours at v cb = 10 v dc; t j = +150 c min. external heating of the device under test to achieve t j = +150 c minimum is allowed provided that a minimum of 75 percent of rated power is dissipated. no heat sink or forced-air cooling on device shall be permitted. 4.4.3 2 group c inspection, table vii (jan, jantx, and jantxv) of mil-prf-19500 . subgroup method condition c2 2036 test condition e. c5 3131 r jc (see 4.5.2). c6 not applicable. 4.4.3.3 group c sample selection . samples for subgroups in group c shall be chosen at random from any inspection lot containing the intended package type and lead fi nish procured to the same specification which is submitted to and passes group a tests for conformance ins pection. testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 group e inspection . group e inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in table ix of mil-prf-19500, table ii her ein. electrical measur ements (end-points) and delta requirements shall be in accordance wi th group a, subgroup 2 and 4.5.2 herein. 4.5 method of inspection . methods of inspection shall be as specif ied in the appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurement sha ll be as specified in section 4 of mil-std-750.
mil-prf-19500/396h 9 4.5.2 delta requirements . delta requirements shall be as specified below: step inspection mil-std-750 symbol limit method conditions 1 collector-base cutoff current 2n3762, l; 2n3764 2n3763, l; 2n3765 3036 bias condition d v cb = 20 v dc v cb = 30 v dc ? i cb02 (1) 100 percent of initial value or 10 na dc, whichever is greater. 2 forward current transfer ratio 3076 v ce = 1.0 v dc; i c = 150 ma dc; pulsed see 4.5.1 ? h fe2 (1) 25 percent change from initial reading. 3 collector to emitter voltage (saturated) 3071 i c = 500 ma dc; i b = 50 ma dc; pulsed (see 4.5.1) ? v ce(sat)3 (2) 50 mv dc change from previous measured value (1) devices which exceed the group a lim its for this test shall not be accepted. (2) applies to jans only.
mil-prf-19500/396h 10 table i. group a inspection . inspection 1 / mil-std-750 symbol limit unit method conditions min max subgroup 1 2 / visual and mechanical inspection 3 / 2071 n = 45 devices, c = 0 solderability 3 / 4 / 2026 n = 15 leads, c = 0 resistance to solvents 3 / 4 / 5 / 1022 n = 15 devices, c = 0 temp cycling 3 / 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0 hermetic seal 4 / fine leak gross leak 1071 n = 22 devices, c = 0 electrical measurements 4 / group a, subgroup 2 bond strength 3 / 4 / 2037 precondition t a = + 250 c at t = 24 hours or t a = + 300 c at t = 2 hours n = 11 wires, c = 0 decap internal visual (design verification) 2075 n = 1 device, c = 0 * subgroup 2 collector to base, cutoff current 2n3762, 2n3764 2n3763, 2n3765 3036 bias condition d v cb = 40 v dc v cb = 60 v dc i cbo1 10 a dc emitter to base, cutoff current 2n3762, 2n3764 2n3763, 2n3765 3061 bias condition d. v eb = 5 v dc i ebo1 10 a dc breakdown voltage collector to emitter 2n3762, 2n3764 2n3763, 2n3765 3011 bias condition d; i c = 10 ma dc v (br)ceo 40 60 v dc collector to base cutoff current 3036 bias condition d i cbo2 100 na dc 2n3762, 2n3764 2n3763, 2n3765 v cb = 20 v dc v cb = 30 v dc see footnotes at end of table.
mil-prf-19500/396h 11 table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limit unit method conditions min max subgroup 2 - continued. collector to emitter cutoff current 3041 bias condition a; v eb = 2.0 v dc i cex1 100 na dc 2n3762, 2n3764 2n3763, 2n3765 v ce = 20 v dc v ce = 30 v dc emitter to base cutoff current 3061 bias condition d; v eb = 2.0 v dc i ebo2 200 na dc forward - current transfer ratio 3076 v ce = 1.0 v dc; i c = 10 ma dc h fe1 35 forward - current transfer ratio 3076 v ce = 1.0 v dc; i c = 150 ma dc; pulsed (see 4.5.1) h fe2 40 forward - current transfer ratio 3076 v ce = 1.0 v dc; i c = 500 ma dc; pulsed (see 4.5.1) h fe3 40 140 forward - current transfer ratio 3076 v ce = 1.5 v dc; i c = 1.0 a dc; pulsed (see 4.5.1) h fe4 2n3762, 2n3764 2n3763, 2n3765 30 20 120 80 forward - current transfer ratio 3076 v ce = 5.0 v dc; i c = 1.5 a dc; pulsed (see 4.5.1) h fe5 2n3762, 2n3764 2n3763, 2n3765 30 20 collector to emitter voltage (saturated) 3071 i c = 10 ma dc; i b = 1 ma dc; pulsed (see 4.5.1) v ce(sat)1 0.10 v dc collector to emitter voltage (saturated) 3071 i c = 150 ma dc; i b = 15 ma dc; pulsed (see 4.5.1) v ce(sat)2 0.22 v dc collector to emitter voltage (saturated) 3071 i c = 500 ma dc; i b = 50 ma dc; pulsed (see 4.5.1) v ce(sat)3 0.50 v dc collector to emitter voltage (saturated) 3071 i c = 1.0 a dc; i b = 100 ma dc; pulsed (see 4.5.1) v ce(sat)4 0.90 v dc base to emitter voltage (saturated) 3066 test condition a; i c = 10 ma dc; i b = 1 ma dc v be(sat)1 0.80 v dc base to emitter voltage (saturated) 3066 test condition a; i c = 150 ma dc; i b = 15 ma dc; pulsed (see 4.5.1) v be(sat)2 1.0 v dc see footnote at end of table.
mil-prf-19500/396h 12 table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limit unit method conditions min max subgroup 2 - continued. base to emitter voltage (saturated) 3066 test condition a; i c = 500 ma dc; i b = 50 ma dc, pulsed (see 4.5.1) v be(sat)3 1.2 v dc base to emitter voltage (saturated) 3066 test condition a; i c = 1.0 a dc; i b = 100 ma dc, pulsed (see 4.5.1) v be(sat)4 .90 1.40 v dc subgroup 3 high - temperature operation t a = +150 c collector to emitter cutoff current bias condition a; v eb = 2 v dc; i cex2 150 a dc 2n3762, 2n3764 2n3763, 2n3765 v ce = 20 v dc; v ce = 30 v dc low - temperature operation t a = -55 c forward - current transfer ratio 3076 v ce = 1.0 v dc; i c = 500 ma dc; pulsed (see 4.5.1) h fe6 20 subgroup 4 magnitude of common emitter, small - signal short - circuit forward - current transfer ratio 3306 v ce = 10 v dc; i c = 50 ma dc; f = 100 mhz |h fe | 2n3762, 2n3764 2n3763, 2n3765 1.8 1.5 6.0 6.0 open circuit output capacitance 3236 v cb = 10 v dc; i e = 0; 100 khz f 1 mhz c obo 25 pf input capacitance (output open - circuited) 3240 v eb = .5 v dc; i c = 0; 100 khz f 1 mhz c ibo 80 pf pulse response pulse delay time 3251 see figure 3 t d 8 ns pulse rise time 3251 see figure 3 t r 35 ns pulse storage time 3251 see figure 4 t s 80 ns pulse fall time 3251 see figure 4 t f 35 ns see footnote at end of table.
mil-prf-19500/396h 13 table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limit unit method conditions min max subgroups 5 and 6 not applicable 1 / for sampling plan, see mil-prf-19500. electrical characteristics for "l" suffix devices are identical to their corresponding non- suffix devices. 2 / for resubmission of failed subgroup a1, double the sample si ze of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the entire subgroup. only the failed test shall be rerun upon submission. 3 / separate samples may be used. 4 / not required for jans devices. 5 / not required for laser marked devices. * table ii. group e inspection (all qua lity levels) - for qualification only . mil-std-750 inspection method conditions qualification subgroup 1 1051 test condition c, 500 cycles, sampling plan 12 devices, c = 0. subgroup 2 1037 v cb = 10 v dc; p t = 1.0 w (for 2n3762, 2n3762l, 2n3763, and 2n3763l), p t = 0.5 w (for 2n3764 and 2n3765) at t a = room ambient as defined in the general requirements of mil-std-750. t on = t off = 3 minutes minimum for 6,000 cycles. 45 devices, c = 0 subgroup 3, 4, 5, 6, and 7 not applicable. subgroup 8 45 devices, c = 0 reverse stability 1033 condition a for devices 400 v dc. condition b for devices < 400 vd dc.
mil-prf-19500/396h 14 notes: 1. the rise time (t r ) of the applied pulse shall be 2 ns, duty cycle 2 percent, and the generator source impedance shall be 50 ? . 2. sampling oscilloscope: z in 100 k ? , c in 12 pf, rise time .1 ns. 3. i b1 = -100 ma dc. figure 3. pulse response test circuit for t d and t r . notes: 1. the rise time (t r ) of the applied pulse shall be 2 ns, duty cycle 2 percent, and the generator source impedance shall be 50 ? . 2. sampling oscilloscope: z in 100 k ? , c in 12 pf, rise time .1 ns. 3. i b1 = +i b2 = -100 ma dc. figure 4. pulse response test circuit for t s and t f .
mil-prf-19500/396h 15 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirement s shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control point's packaging ac tivity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense a gency's automated packaging files, cd-ro m products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or expl anatory nature that may be helpful, but is not mandatory.) 6.1 intended use . the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements . acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. packaging requirements (see 5.1). d. lead finish (see 3.4.1). e. type designation and quality assurance level. 6.3 qualification . with respect to products r equiring qualification, awards w ill be made only for products which are, at the time of award of contract, qualified for inclusi on in qualified manufacturers? list qml whether or not such products have actually been so listed by that date. the att ention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products t hat they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or pur chase orders for the products covered by this specification. information pertaini ng to qualification of products may be obtained from defense supply center columbus, attn: dscc-vqe, p. o. box 3990, columbus, oh 43216-5000. 6.4 suppliers of janhc and jankc die . the qualified janhc and jankc suppliers with the applicable letter version (example, janhca2n2369a) will be identified on the qml. janc ordering information manufacturer pin 43611 2n3762 2n3763 2n3764 2n3765 janhca2n3762 jankca2n3762 janhca2n3763 jankca2n3763 janhca2n3764 jankca2n3764 janhca2n3765 jankca2n3765
mil-prf-19500/396h 16 6.5 changes from previous issue . the margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notat ions. bidders and contractors are cautioned to evaluate the requirements of this document based on t he entire content irrespective of the marginal notations and relationship to the last previous issue. custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961-2491) nasa - na dla - cc review activities: army - mi navy - as, mc air force - 19, 71, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a r eply within 30 days from receipt of the form. note: this form may not be used to reques t copies of documents, nor to request waiv ers, or clarificati on of requirements on current contracts. comments submitted on th is form do not constitute or imply author ization to waive any portion of the refere nced document(s) or to amend c ontractual requirements. i recommend a change: 1. document number mil-prf-19500/396h 2. document date 4 january 2002 3. document title semiconductor device, transistor, pnp, silicon, switching types 2n3762, 2n3762l, 2n3763, 2n3763l, 2n3764, and 2n3765, jan, jantx, jantxv, jans, janhc and jankc. 4. nature of change (identify paragraph number and include propos ed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil c. address defense supply center columbus attn: dscc-vac p.o. box 3990 columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533 fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

▲Up To Search▲

Price & Availability of JAN2N3811L

	To Download JAN2N3811L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .