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| inchange semiconductor product specification silicon npn power transistors BDY56 description ? with to-3 package ? high current capability ? fast switching speed applications ? lf large signal power amplification. pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i b base current 7 a p t total power dissipation t c =25 ?? 117 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.5 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BDY56 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ; i b =0 120 v v cesat-1 collector-emitter saturation voltage i c =4a ;i b =0.4a 1.1 v v cesat-2 collector-emitter saturation voltage i c =10a ;i b =3.3a 2.5 v v be base-emitter on voltage i c =4 a; v ce =4v 1.8 v i cex collector cut-off current v ce =150v; v be =-1.5v t c =150 ?? 3.0 30 ma i ceo collector cut-off current v ce =60v; i b =0 0.5 ma i ebo emitter cut-off current v eb =7v; i c =0 3.0 ma h fe-1 dc current gain i c =4a ; v ce =4v 20 70 h fe-2 dc current gain i c =10a ; v ce =4v 10 f t transition frequency i c =10a ; v ce =4v 10 mhz inchange semiconductor product specification 3 silicon npn power transistors BDY56 package outline fig.2 outline dimensions |
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