TLRE157AP 2002-09-25 1 toshiba led lamp ingaa ? p red light emission TLRE157AP panel circuit indicator 5mm diameter (t1 ? 3 / 4) ingaa ? p red led all plastic mold type. colorless clear lens low drive current, high intensity red light emission recommended forward current: i f = 15~20ma (dc) all plastic molded lens, provides an excellent on ? off contrast ratio. fast response time, capable of pulse operation. high power luminous intensity without stand ? offs applications: suitable for outdoor message signboard, safety equipment. automotive use. maximum ratings (ta = 25c) characteristic symbol rating unit forward current (dc) i f 50 ma reverse voltage v r 4 v power dissipation p d 125 mw operating temperature range t opr 30~85 c storage temperature range t stg 40~120 c unit in mm jedec D eiaj D toshiba weight: 0.31g
TLRE157AP 2002-09-25 2 electrical and optical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit forward voltage v f i f 20ma D 1.85 2.4 v reverse current i r v r 4v D D 50 a TLRE157AP 272 1000 D luminous intensity TLRE157AP(st) i v i f 20ma (note) 850 D 4140 mcd peak emission wavelength p i f 20ma D 644 D nm spectral line half width i f 20ma D 18 D nm dominant wavelength d i f 20ma D 630 D nm (note): lamps are classified into the following ranks according to their luminous intensity. mesurement tolerance for each limit is 15%. q: 320 640mcd, r: 560 1120mcd, s: 1000 2000mcd, t: 1800 3600mcd, u: 3200 6400mcd precaution please be careful of the followings soldering temperature: 260cmax soldering time: 3s max (soldering portion of lead: up to 2mm from the body of the device) if the lead is formed, the lead should be formed up to 5mm from the body of the device without forming stress to the resin. soldering should be performed after lead forming. this visible led lamp also emits some ir light. if a photodetector is located near the led lamp, please ensure that it will not be affected by this ir light.
TLRE157AP 2002-09-25 3 i v ? t c case temperature tc (c) relative luminous intensity i v 3 0.1 ? 20 1 0.5 0.3 0 20 40 60 80 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 forward voltage v f (v) forward current i f (ma) i f ? v f 50 1 1.6 30 10 5 3 1.7 1.8 1.9 2.0 2.1 2.2 ta = 25c i v ? i f forward current i f (ma) luminous intensity i v (mcd) 10000 50 0.5 3000 1000 500 300 100 1 3 5 10 30 50 100 300 5000 ta = 2 5 c radiation pattern ta = 2 5 c 90 0 90 0.2 0.4 0.6 0.8 80 70 60 50 40 30 20 10 0 70 80 50 60 30 40 20 10 relative luminous intensity ? wavelength wavelength (nm) relative luminous intensity 1.0 0 580 0.8 0.6 0.4 0.2 600 620 640 660 680 700 i f = 20 ma ta = 2 5 c
TLRE157AP 2002-09-25 4 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707eac restrictions on product use
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