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200 5 -11-07 rev. 2.4 page 1 spb12n50c3 cool mos? power transistor v ds @ t jmax 560 v r ds(on) 0.38 ? i d 11.6 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance pg-to263 - marking 12n50c3 type package ordering code spb12n50c3 pg-to263 q67040-s4641 maximum ratings parameter symbol value unit spb continuous drain current t c = 25 c t c = 100 c i d 11.6 7 a pulsed drain current, t p limited by t j ma x i d p uls 34.8 a avalanche energy, single pulse i d =5.5a, v dd =50v e as 340 mj avalanche energy, repetitive t ar limited by t jmax 2) i d =11.6a, v dd =50v e ar 0.6 avalanche current, repetitive t ar limited by t j ma x i ar 11.6 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 125 w operating and storage temperature t j , t st g -55...+150 c reverse diode dv/dt dv/dt 15 v/ns c 7)
200 5 -11-07 rev. 2.4 page 2 spb12n50c3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 400 v, i d = 11.6 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 1 k/w thermal resistance, junction - case, fullpak r thjc _ fp - - 3.8 thermal resistance, junction - ambient, leaded r thja - - 62 thermal resistance, junction - ambient, fullpak r thja _ fp - - 80 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - 35 62 - soldering temperature, reflow soldering, msl1 1.6 mm (0.063 in.) from case for 10s 4) t sold - - 260 c electrical characteristics, at t j =25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 500 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =11.6a - 600 - gate threshold voltage v gs(th) i d =500 a, v gs =v ds 2.1 3 3.9 zero gate voltage drain current i dss v ds =500v, v gs =0v, t j =25c t j =150c - - 0.1 - 1 100 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =7a t j =25c t j =150c - - 0.34 0.92 0.38 - gate input resistance r g f =1mhz, open drain - 1.4 -
200 5 -11-07 rev. 2.4 page 3 spb12n50c3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =7a - 8 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1200 - pf output capacitance c oss - 400 - reverse transfer capacitance c rss - 30 - effective output capacitance, 5) energy related c o(er) v gs =0v, v ds =0v to 400v - 45 - effective output capacitance, 6) time related c o(tr) - 92 - turn-on delay time t d(on) v dd =380v, v gs =0/10v, i d =11.6a, r g =6.8 - 10 - ns rise time t r - 8 - turn-off delay time t d(off) - 45 - fall time t f - 8 - gate charge characteristics gate to source charge q gs v dd =400v, i d =11.6a - 5 - nc gate to drain charge q gd - 26 - gate charge total q g v dd =400v, i d =11.6a, v gs =0 to 10v - 49 - gate plateau voltage v (plateau) v dd =400v, i d =11.6a - 5 - v 1 limited only by maximum temperature 2 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 4 soldering temperature for to-263: 220c, reflow 5 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 6 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . 7 i sd <=i d , di/dt<=400a/us, v dclink =400v, v peak 200 5 -11-07 rev. 2.4 page 4 spb12n50c3 electrical characteristics parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 11.6 a inverse diode direct current, pulsed i sm - - 34.8 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =400v, i f = i s , d i f /d t =100a/s - 380 - ns reverse recovery charge q rr - 5.5 - c peak reverse recovery current i rrm - 38 - a peak rate of fall of reverse recovery current di rr /dt t j =25c - 1100 - a/s typical transient thermal characteristics symbol value unit symbol value unit spb spb r th1 0.015 k/w c th1 0.0001878 ws/k r th2 0.03 c th2 0.0007106 r th3 0.056 c th3 0.000988 r th4 0.197 c th4 0.002791 r th5 0.216 c th5 0.007285 r th6 0.083 c th6 0.063 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
200 5 -11-07 rev. 2.4 page 5 spb12n50c3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 140 spp12n50c3 p tot 2 power dissipation fullpak p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 4 8 12 16 20 24 28 w 36 p tot 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 4 safe operating area fullpak i d = f ( v ds ) parameter: d = 0, t c = 25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms dc
200 5 -11-07 rev. 2.4 page 6 spb12n50c3 5 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 6 transient thermal impedance fullpak z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 7 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 4 8 12 16 20 24 28 32 a 40 i d 4.5v 5v 5.5v 6v 6.5v 7v 20v 10v 8v 8 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 2 4 6 8 10 12 14 16 18 a 22 i d 4v 4.5v 5v 5.5v 6v 20v 8v 7.5v 7v
200 5 -11-07 rev. 2.4 page 7 spb12n50c3 9 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 2 4 6 8 10 12 14 16 a 20 i d 0.4 0.6 0.8 1 1.2 1.4 1.6 2 r ds(on) 4v 4.5v 5v 5.5v 6v 6.5v 8v 20v 10 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 7 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2.1 spp12n50c3 r ds(on) typ 98% 11 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 1 2 3 4 5 6 7 8 v 10 v gs 0 4 8 12 16 20 24 28 32 a 40 i d 25c 150c 12 typ. gate charge v gs = f ( q gate ) parameter: i d = 11.6 a pulsed 0 10 20 30 40 50 nc 70 q gate 0 2 4 6 8 10 12 v 16 spp12n50c3 v gs 0,8 v ds max ds max v 0,2
200 5 -11-07 rev. 2.4 page 8 spb12n50c3 13 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp12n50c3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 14 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 1 2 3 4 5 6 7 8 9 a 11 i ar t j (start) =125c t j (start) =25c 15 avalanche energy e as = f ( t j ) par.: i d = 5.5 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 50 100 150 200 250 mj 350 e as 16 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 450 460 470 480 490 500 510 520 530 540 550 560 570 v 600 spp12n50c3 v (br)dss
200 5 -11-07 rev. 2.4 page 9 spb12n50c3 17 avalanche power losses p ar = f ( f ) parameter: e ar =0.6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 18 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 v 500 v ds -1 10 0 10 1 10 2 10 3 10 4 10 pf c ciss coss crss 19 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 v 500 v ds 0 1 2 3 4 j 6 e oss
200 5 -11-07 rev. 2.4 page 10 spb12n50c3 definition of diodes switching characteristics
5 11-07 rev. 2.4 pdjh 63%121& pg-to263-3-2, pg-to263-3-5, pg-to263-3-22
200 5 -11-07 rev. 2.4 page 12 spb12n50c3 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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