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npn silicon power transistors switchmode bridge series . . . specifically designed for use in half bridge and full bridge off line converters. ? excellent dynamic saturation characteristics ? rugged rbsoa capability ? collectoremitter sustaining voltage e v ceo(sus) e 400 v ? collectoremitter breakdown e v (br)ces e 650 v ? stateofart bipolar power transistor design ? fast inductive switching: t fi = 25 ns (typ) @ 100 c t c = 50 ns (typ) @ 100 c t sv = 1 m s (typ) @ 100 c ? ultrafast fbsoa specified ? 100 c performance specified for: rbsoa inductive load switching saturation voltages leakages ??????????????????????? ??????????????????????? maximum ratings ??????????? ??????????? rating ????? ????? symbol ???? ???? mj16110 ???? ???? mjw16110 ??? ??? unit ??????????? ??????????? collectoremitter sustaining voltage ????? ????? v ceo(sus) ??????? ??????? 400 ??? ??? vdc ??????????? ??????????? collectoremitter breakdown voltage ????? ????? v ces ??????? ??????? 650 ??? ??? vdc ??????????? ??????????? emitterbase voltage ????? ????? v ebo ??????? ??????? 6 ??? ??? vdc ??????????? ? ????????? ? ??????????? collector current e continuous e pulsed (1) ????? ? ??? ? ????? i c i cm ??????? ? ????? ? ??????? 15 20 ??? ? ? ? ??? adc ??????????? ??????????? base current e continuous e pulsed (1) ????? ????? i b i bm ??????? ??????? 10 15 ??? ??? adc ??????????? ? ????????? ? ? ????????? ? ??????????? total power dissipation @ t c = 25 c @ t c = 100 c derated above 25 c ????? ? ??? ? ? ??? ? ????? p d ???? ? ?? ? ? ?? ? ???? 175 100 1 ???? ? ?? ? ? ?? ? ???? 135 54 1.09 ??? ? ? ? ? ? ? ??? watts w/ c ??????????? ??????????? operating and storage temperature ????? ????? t j , t stg ???? ???? 65 to 200 ???? ???? 55 to 150 ??? ??? c ??????????????????????? ? ????????????????????? ? ??????????????????????? thermal characteristics ??????????? ??????????? thermal resistance e junction to case ????? ????? r q jc ???? ???? 1 ???? ???? 0.92 ??? ??? c/w ??????????? ? ????????? ? ? ????????? ? ??????????? maximum lead temperature for soldering purposes 1/8 from case for 5 seconds ????? ? ??? ? ? ??? ? ????? t l ??????? ? ????? ? ? ????? ? ??????? 275 ??? ? ? ? ? ? ? ??? c (1) pulse test: pulse width = 5 ms, duty cycle 10%. on semiconductor ? semiconductor components industries, llc, 2001 april, 2001 rev. 4 1 publication order number: mj16110/d power transistors 15 amperes 400 volts 175 and 135 watts mj16110 mjw16110 * * case 107 to204aa (formerly to3) mj16110 case 340f03 to247ae mjw16110 *not recommended for new design
mj16110 mjw16110 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics (1) ??????????????????? ??????????????????? collectoremitter sustaining voltage (table 1) (i c = 20 madc, i b = 0) ????? ????? v ceo(sus) ???? ???? 400 ??? ??? e ???? ???? e ??? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v ce = 650 vdc, v be(off) = 1.5 v) (v ce = 650 vdc, v be(off) = 1.5 v, t c = 100 c) ????? ? ??? ? ????? i cev ???? ? ?? ? ???? e e ??? ? ? ? ??? e e ???? ? ?? ? ???? 100 1000 ??? ? ? ? ??? m adc ??????????????????? ??????????????????? collector cutoff current (v ce = 650 vdc, r be = 50 w , t c = 100 c) ????? ????? i cer ???? ???? e ??? ??? e ???? ???? 1000 ??? ??? m adc ??????????????????? ??????????????????? emitterbase leakage (v eb = 6 vdc, i c = 0) ????? ????? i ebo ???? ???? e ??? ??? e ???? ???? 10 ??? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ??????????????????? ? ????????????????? ? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 5 adc, i b = 0.5 adc) (i c = 10 adc, i b = 1.2 adc) (i c = 10 adc, i b = 2 adc) (i c = 10 adc, i b = 2 adc, t c = 100 c) ????? ? ??? ? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ? ?? ? ???? e e e e ??? ? ? ? ? ? ? ? ? ? ??? 0.3 0.7 0.3 0.4 ???? ? ?? ? ? ?? ? ? ?? ? ???? 0.9 2.0 1.0 1.5 ??? ? ? ? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 10 adc, i b = 2 adc) (i c = 10 adc, i b = 2 adc, t c = 100 c) ????? ? ??? ? ? ??? ? ????? v be(sat) ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? 1.2 1.2 ???? ? ?? ? ? ?? ? ???? 1.5 1.5 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ??????????????????? dc current gain (i c = 15 adc, v ce = 5 vdc) ????? ????? h fe ???? ???? 6 ??? ??? 12 ???? ???? 20 ??? ??? e ????????????????????????????????? dynamic characteristics ??????????????????? ??????????????????? dynamic saturation ????? ????? v ce(dsat) ????????? ????????? see figures 11, 12, and 13 ??? ??? v ??????????????????? ??????????????????? output capacitance (v ce = 10 vdc, i e = 0, f test = 1 khz) ????? ????? c ob ???? ???? e ??? ??? e ???? ???? 400 ??? ??? pf ????????????????????????????????? ????????????????????????????????? switching characteristics ????????????????????????????????? ????????????????????????????????? inductive load (table 1) ?????? ?????? storage ???????? ???????? ??????? ??????? ????? ????? t sv ???? ???? e ??? ??? 700 ???? ???? 1500 ??? ??? ns ?????? ?????? crossover ???????? ???????? ??????? ??????? t j = 25 c ????? ????? t c ???? ???? e ??? ??? 45 ???? ???? 150 ??? ??? ?????? ?????? fall time ???????? ???????? i c = 10 a, i b1 = 1 a, v be( ff) =5v ??????? ??????? j ????? ????? t fi ???? ???? e ??? ??? 20 ???? ???? 75 ??? ??? ?????? ?????? storage ???????? ???????? v be(off) = 5 v, v ce ( pk ) = 250 v ??????? ??????? ????? ????? t sv ???? ???? e ??? ??? 1000 ???? ???? 2000 ??? ??? ?????? ?????? crossover ???????? ???????? v ce( k) 250 v ??????? ??????? t j = 100 c ????? ????? t c ???? ???? e ??? ??? 50 ???? ???? 200 ??? ??? ?????? ?????? fall time ???????? ???????? ??????? ??????? j ????? ????? t fi ???? ???? e ??? ??? 25 ???? ???? 125 ??? ??? ????????????????????????????????? ????????????????????????????????? resistive load (table 2) ?????? ?????? delay time ???????? ???????? ??????? ??????? ????? ????? t d ???? ???? e ??? ??? 15 ???? ???? e ??? ??? ns ?????? ?????? rise time ???????? ???????? i 10 a i 1a ??????? ??????? i b2 = 2 a, ????? ????? t r ???? ???? e ??? ??? 330 ???? ???? e ??? ??? ?????? ?????? storage time ???????? ???????? i c = 10 a, i b1 = 1 a, v cc = 250 v, ??????? ??????? i b2 2 a , r b2 = 4 w ????? ????? t s ???? ???? e ??? ??? 800 ???? ???? e ??? ??? ?????? ?????? fall time ???????? ???????? v cc = 250 v , pw = 30 m s, duty cycle = 2% ??????? ??????? ????? ????? t f ???? ???? e ??? ??? 110 ???? ???? e ??? ??? ?????? ?????? storage time ???????? ???????? duty c ycle = 2% ??????? ??????? v =5v ????? ????? t s ???? ???? e ??? ??? 500 ???? ???? e ??? ??? ?????? ?????? fall time ???????? ???????? ??????? ??????? v be(off) = 5 v ????? ????? t f ???? ???? e ??? ??? 250 ???? ???? e ??? ??? (1) pulse test: pulse width = 300 m s, duty cycle 2%.
mj16110 mjw16110 http://onsemi.com 3 v ce , collector-emitter saturation v be , base-emitter voltage (volts) v ce , collector-emitter voltage (volts) 0.15 i c , collector current (amps) 0.2 1 3 1.5 10 i b , base current (amps) 5 2 1 0.7 0.2 0.1 0.3 t j = 100 c t j = 25 c 0.2 figure 1. dc current gain i c , collector current (amps) 2 0.2 0.3 0.5 1 2 5 10 20 30 10 3 figure 2. collectoremitter saturation voltage 0.15 i c , collector current (amps) 0.03 0.3 1 2 0.7 0.3 h fe , dc current gain 5 v ce = 5 v 3 5 10 15 figure 3. collectoremitter saturation region 7 0.7 0.1 0.2 0.5 10 25 0.7 figure 4. baseemitter saturation region figure 5. capacitance 3 1 10k 1 v ce , collector-emitter voltage (volts) 10 5 2k 100 1k c, capacitance (pf) 30 10 a i c = 3 a t j = 25 c c ib 5 a t j = 100 c 20 2 3 2 315 0.1 0.2 0.1 i c /i b = 10 0.5 1 1 0.5 5k 1k 3k 50 100 200 300 500 0.3 0.5 3 10 30 50 600 300 i c /i b = 5 0.7 7 0.5 0.05 0.07 t j = 25 c 7 0.5 7 0.3 0.5 2 5 10 f test = 1 khz 20 t j = 25 c t j = -55 c t j = 100 c t j = 25 c t j = 100 c t j = 25 c i c /i b = 5 & 10 0.7 7 a 15 a c ob voltage (volts) typical static characteristics
mj16110 mjw16110 http://onsemi.com 4 t c , crossover time (ns) 1k i c , collector current (amps) figure 6. storage time figure 7. crossover time i c , collector current (amps) 23 57 15 10k 7k 5k 3k 2k 500 , storage time (ns) t sv 1.5 700 figure 8. fall time figure 9. inductive switching measurements figure 10. peak reverse base current i c /i b = 10, t c = 100 c, v ce(pk) = 250 v 300 1k 100 10 2 3 5 7 15 700 500 300 100 30 1.5 50 200 70 10 10 2 20 v be(off) = 0 v i b2 = 2 (i b1 ) v be(off) = 2 v 1k i c , collector current (amps) 357 15 700 500 100 30 1.5 50 200 70 10 10 20 i b2 , reverse base current (amps) v be(off) , reverse base voltage (volts) 0 10 8 6 4 2 i b1 = 2 a 01 2 4 5 3 i c = 10 a t c = 25 c 1 a 1 9 7 5 3 t fi , collector current fall time (ns) t fi t rv t, time i c 90% i b1 i c(pk) v ce(pk) 90% v ce(pk) 90% i c(pk) 10% v ce(pk) 10% i c (pk) 2% i c i b t sv t ti t c v ce v be(off) = 5 v v be(off) = 0 v i b2 = 2 (i b1 ) v be(off) = 2 v v be(off) = 5 v v be(off) = 0 v i b2 = 2 (i b1 ) v be(off) = 5 v v be(off) = 2 v typical inductive switching characteristics
mj16110 mjw16110 http://onsemi.com 5 +15 150 w 100 w 100 m f mtp8p10 mpf930 mpf930 mur105 mje210 150 w 500 m f v off 50 w +10 mtp12n10 mtp8p10 r b1 r b2 a 1 m f 1 m f drive circuit *tektronix am503 * p6302 or equivalent scope e tektronix 7403 or equivalent t 1 l coil (i cpk ) v cc note: adjust v off to obtain desired v be(off) at point a. t 1 adjusted to obtain i c(pk) t 1 +v -v 0 v a *i b *i c l t.u.t . 1n4246gp v clamp v cc i c(pk) v ce(pk) v ce i b i c i b1 i b2 v ceo(sus) l = 10 mh r b2 = v cc = 20 volts i c(pk) = 20 ma inductive switching l = 200 m h r b2 = 0 v cc = 20 volts r b1 selected for desired i b1 rbsoa l = 200 m h r b2 = 0 v cc = 20 volts r b1 selected for desired i b1 table 1. inductive load switching t d and t r t s and t f h.p. 214 or equiv. p.g. 50 r b = 8.5 w *i b *i c t.u.t . r l v cc v in 0 v 11 v t r 15 ns *tektronix am503 * p6302 or equivalent v cc 250 vdc r l 25 w i c 10 a i b 1 a +15 150 w 100 w 100 m f mtp8p10 mpf930 mpf930 mur105 mje210 150 w 500 m f v off 50 w +10 v mtp12n10 mtp8p10 r b1 r b2 a 1 m f 1 m f t.u.t . *i c *i b a r l v cc v (off) adjusted to give specified off drive v cc 250 v i c 10 a i b1 1.0 a i b2 per spec r b1 15 w r b2 per spec r l 25 w table 2. resistive load switching
mj16110 mjw16110 http://onsemi.com 6 v ce , collector-emitter voltage (volts) t, time figure 11. definition of dynamic saturation measurement figure 12. dynamic saturation voltage i b , base current (amps) 0 16 i b1 v ce 14 10 6 t = 2 m s 0.5 1 2 2.5 1.5 i c = 10 a 2 12 8 4 v ce(dsat) = dynamic saturation voltage and is measured from the 90% point of i b1 (t = 0) to a measurement point on the time axis (t 1 , t 2 or t 3 etc.) 0 0t 8 t 7 t 6 t 5 t 4 t 3 t 2 t 1 t = 1 m s maximum typical 90% i b1 dynamic saturation voltage for bipolar power transistors low dc saturation voltages are achieved by conductivity modulating the collector region. since conductivity modulation takes a finite amount of time, dc saturation voltages are not achieved instantly at turnon. in bridge circuits, two transistor forward converters, and two transistor flyback converters dynamic saturation characteristics are responsible for the bulk of dynamic losses. the mj16110 has been designed specifically to minimize these losses. performance is roughly four times better than the original version of mj16010. from a measurement point of view, dynamic saturation voltage is defined as collectoremitter voltage at a specific point in time after i b1 has been applied, where t = 0 is the 90% point on the i b1 rise time waveform, this definition is illustrated in figure 11. performance data was taken in the circuit that is shown in figure 13. the 24 volt rail allows a tektronix 2445 or equivalent scope to operate at 1 volt per division without input amplifier saturation. dynamic saturation performance is illustrated in figure 12. the mj16110 reaches dc saturation levels in approximately 2 m s, provided that sufficient base drive is provided. the dependence of dynamic saturation voltage upon base drive suggests a spike of i b1 at turnon to minimize dynamic saturation losses, and also avoid overdrive at turnoff. however, in order to simulate worst case conditions the guaranteed dynamic saturation limits in this data sheet are specified with a constant level of i b1 . +24 1k 1k 10k 0.1 m f 0.01 m f 100pf u1 mc1455 (oscillator) 1n5314 q1 1n4111 mj11012 100 m f 100 w 1 w 2.4 w 20 w 0.01 m f q4 irfd9120 q5 mtm8p08 2.4mh 1n5831 10 m f i c i b v ce mur405 mur405 47 w 1 w 500 w q2 q3 irfd113 0.01 m f 0.01 m f irfd9123 1n914 10k 1.8k q6 mtp25n06 48 7 6 2 15 3 48 2 3 7 6 15 figure 13. dynamic saturation test circuit
mj16110 mjw16110 http://onsemi.com 7 20 0 200 14 10 16 8 4 2 400 600 12 18 6 i c , collector current (amps) 50 v ce , collector-emitter voltage (volts) 0.01 20 5 1 10 0.5 0.2 0.1 0.02 100 500 region ii expanded fbsoa using mur870 ultrafast rectifier, see figure 16 t c = 25 c 10 m s 1ms dc 100 ns 0 v ce , collector-emitter voltage (volts) figure 14. forward bias safe operating area i c /i b1 = 5 t j 100 c mjw16110 figure 15. reverse bias safe operating area v be(off) = 1 to 5 v v be(off) = 0 v i c , collector current (amps) bonding wire limit thermal limit secondary breakdown limit 2 20 0.3 3 30 200 1000 10 50 300 1235 300 500 700 100 0.03 0.05 mj16110 ii guaranteed safe operating area information figure 16. switching safe operating area +15 150 w 100 m f mtp8p10 mpf930 mpf930 mur105 mje210 150 w 500 m f v off 50 w +10 mtp12n10 r b1 r b2 1 m f 1 m f 100 w mtp8p10 mur105 mur1100 t.u.t . mur870 v ce (650 v max) 10 m f 10 mh note: test circuit for ultrafast fbsoa note: r b2 = 0 and v off = 5 volts
mj16110 mjw16110 http://onsemi.com 8 figure 17. power derating t, time (ms) 1 0.01 0.01 0.7 0.2 0.1 0.05 0.02 r(t), effective transient thermal 0.05 1 2 5 10 20 50 100 200 500 r q jc (t) = r(t) r q jc r q jc = 1 or 0.92 cw t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.02 single pulse 0.1 0.1 0.5 0.2 resistance (normalized) 1000 figure 18. thermal response 0.5 0.3 0.07 0.03 0.03 0.3 3 30 300 0.02 power derating factor (%) 100 0 t c , case temperature ( c) 0 40 200 80 60 40 20 mj16110 mjw16110 80 120 160 second breakdown derating thermal derating 0.03
mj16110 mjw16110 http://onsemi.com 9 safe operating area information forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data in figure 14 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 14 may be found at any case temperature by using the appropriate curve on figure 17. t j(pk) may be calculated from the data in figure 18. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the basetoemitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse biased safe operating area and represents the voltagecurrent condition allowable during reverse biased turnoff. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 15 gives the rbsoa characteristics. switchmode design considerations fbsoa allowable dc power dissipation in bipolar power transistors decreases dramatically with increasing collectoremitter voltage. a transistor which safely dissipates 100 watts at 10 volts will typically dissipate less than 10 watts at its rated v (br)ceo(sus) . from a power handling point of view, current and voltage are not interchangeable (see application note an875). turnon safe turnon load line excursions are bounded by pulsed fbsoa curves. the 10 m s curve applies for resistive loads, most capacitive loads, and inductive loads that are clamped by standard or fast recovery rectifiers. similarly, the 100 ns curve applies to inductive loads which are clamped by ultrafast recovery rectifiers, and are valid for turnon crossover times less than 100 ns (an952). at voltages above 75% of v (br)ceo(sus) , it is essential to provide the transistor with an adequate amount of base drive very rapidly at turnon. more specifically, safe operation according to the curves is dependent upon base current rise time being less than collector current rise time. as a general rule, a base drive compliance voltage in excess of 10 volts is required to meet this condition (see application note an875). turnoff a bipolar transistor's ability to withstand turnoff stress is dependent upon its forward base drive. gross overdrive violates the rbsoa curve and risks transistor failure. for this reason, circuits which use fixed base drive are more likely to fail at light loads due to heavy overdrive (see application note an875). operation above v (br)ceo(sus) when bipolars are operated above collectoremitter breakdown, base drive is crucial. a rapid application of adequate forward base current is needed for safe turnon, as is a stiff negative bias needed for safe turnoff. any hiccup in the basedrive circuitry that even momentarily violates either of these conditions will likely cause the transistor to fail. therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp input signal (see application note an952). rbsoa reversed biased safe operating area has a first order dependency on circuit configuration and drive parameters. the rbsoa curves in this data sheet are valid only for the conditions specified. for a comparison of rbsoa results in several types of circuits (see application note an951). design samples transistor parameters tend to vary much more from wafer lot to wafer lot, over long periods of time, than from one device to the next in the same wafer lot. for design evaluation it is advisable to use transistors from several different date codes. baker clamps many unanticipated pitfalls can be avoided by using baker clamps. mur105 and mur170 diodes are recommended for base drives less than 1 amp. similarly, mur405 and mur470 types are wellsuited for higher drive requirements (see article reprint ar131).
mj16110 mjw16110 http://onsemi.com 10 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h case 107 to204aa (formerly to3) issue z
mj16110 mjw16110 http://onsemi.com 11 package dimensions case 340f03 issue g to247 dim a min max min max inches 20.40 20.90 0.803 0.823 millimeters b 15.44 15.95 0.608 0.628 c 4.70 5.21 0.185 0.205 d 1.09 1.30 0.043 0.051 e 1.50 1.63 0.059 0.064 f 1.80 2.18 0.071 0.086 g 5.45 bsc 0.215 bsc h 2.56 2.87 0.101 0.113 j 0.48 0.68 0.019 0.027 k 15.57 16.08 0.613 0.633 l 7.26 7.50 0.286 0.295 p 3.10 3.38 0.122 0.133 q 3.50 3.70 0.138 0.145 r 3.30 3.80 0.130 0.150 u 5.30 bsc 0.209 bsc v 3.05 3.40 0.120 0.134 r p a k v f d g u l e 0.25 (0.010) m tb m 0.25 (0.010) m yq s j h c 4 123 t b y q notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter.
mj16110 mjw16110 http://onsemi.com 12 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mj16110/d switchmode is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland

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