? semiconductor components industries, llc, 2010 march, 2010 ? rev. 1 1 publication order number: mbrf30h150ct/d mbrf30h150ctg, MBR30H150CTG switchmode ? power rectifier 150 v, 30 a features and benefits ? low forward voltage ? low power loss/high efficiency ? high surge capability ? 30 a total (15 a per diode leg) ? guard ? ring for stress protection ? these are pb ? free devices applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight (approximately): 1.9 grams (to ? 220 & to ? 220fp) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds maximum ratings please see the table on the following page to ? 220ab case 221a style 6 3 4 1 schottky barrier rectifier 30 amperes, 150 volts 1 3 2, 4 2 marking diagrams ayww b30h150g aka a = assembly location y = year ww = work week b30h150 = device code g = pb ? free device aka = polarity designator http://onsemi.com to ? 220 fullpak case 221d style 3 3 1 2 see detailed ordering and shipping information in the package dimensions section on p age 2 of this data sheet. ordering information ayww b30h150g aka
mbrf30h150ctg, MBR30H150CTG http://onsemi.com 2 maximum ratings (per diode leg) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 150 v average rectified forward current (per leg) (rated v r ) t c = 124 c (per device) i f(av) 15 30 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 200 a operating junction temperature (note 1) t j ? 20 to +150 c storage temperature t stg ? 65 to +150 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s esd ratings: machine model = c human body model = 3b > 400 > 8000 v thermal characteristics rating symbol value unit maximum thermal resistance (MBR30H150CTG) ? junction ? to ? case ? junction ? to ? ambient (mbrf30h150ctg) ? junction ? to ? case r jc r ja r jc 2.0 45 2.5 c/w electrical characteristics (per diode leg) rating symbol typ max unit maximum instantaneous forward voltage (note 2) (i f = 5 a, t c = 25 c) (i f = 5 a, t c = 125 c) (i f = 15 a, t c = 25 c) (i f = 15 a, t c = 125 c) v f 0.69 0.55 0.98 0.68 0.75 0.60 1.11 0.73 v maximum instantaneous reverse current (note 2) (rated dc voltage, t c = 25 c) (rated dc voltage, t c = 125 c) i r 60 50 a ma stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . 2. pulse test: pulse width = 300 s, duty cycle 2.0%. device ordering information device order number package type shipping ? mbrf30h150ctg to ? 220fp (pb ? free) 50 units / rail MBR30H150CTG to ? 220 (pb ? free) 50 units / rail ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
mbrf30h150ctg, MBR30H150CTG http://onsemi.com 3 i f , instantaneous forward current (a) figure 1. typical forward voltage v f , instantaneous forward voltage (v) t j = 125 c t j = 25 c t j = 100 c 0.1 1 10 100 0 0.2 1 1.8 2 0.4 0.6 1.6 1.4 1.2 0.8 i f , instantaneous forward current (a) figure 2. maximum forward voltage v f , instantaneous forward voltage (v) t j = 125 c t j = 25 c t j = 100 c 0.1 1 10 100 0 0.2 1 1.8 2 0.4 0.6 1.6 1.4 1.2 0.8 2.2 i r , reverse current (a) figure 3. typical reverse current v r , reverse voltage (v) t j = 100 c t j = 125 c t j = 25 c 1.0e ? 07 1.0e ? 06 1.0e ? 05 1.0e ? 04 1.0e ? 03 1.0e ? 02 0 10 20 30 40 50 60 70 80 90 100110 120130140150 i r , reverse current (a) figure 4. maximum reverse current v r , reverse voltage (v) t j = 100 c t j = 125 c t j = 25 c 1.0e ? 06 1.0e ? 05 1.0e ? 04 1.0e ? 03 1.0e ? 02 1.0e ? 01 0 10 20 30 40 50 60 70 80 90 100110 12013014015 0 i f , average forward current (amps) figure 5. current derating t c , case temperature ( c) square wave dc p fo , average power dissipation (watts) i o , average forward current (amps) square figure 6. forward power dissipation dc t j = 150 c 0 5 10 15 20 25 125 130 135 0 5 10 15 20 25 024681012 30 14 16 18 20 2.4 140 145 150 155 110 115 120 95 100 105 22 24 26 28 30
mbrf30h150ctg, MBR30H150CTG http://onsemi.com 4 c, capacitance (pf) v r , reverse voltage (v) figure 7. capacitance 10 100 1000 10000 0 50 100 150 t j = 25 c r(t), transient thermal resistance figure 8. thermal response junction ? to ? ambient for MBR30H150CTG 1000 0.1 0.00001 t 1 , time (sec) 1 0.0001 0.001 0.01 1 10 100 0.000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t), transient thermal resistance figure 9. thermal response junction ? to ? case for MBR30H150CTG 1000 0.1 0.00001 t 1 , time (sec) 10 0.01 0.0001 0.001 0.01 1 10 100 0.000001 0.1 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.01
mbrf30h150ctg, MBR30H150CTG http://onsemi.com 5 r(t), transient thermal resistance figure 10. thermal response junction ? to ? case for mbrf30h150ctg 1000 0.1 0.00001 t 1 , time (sec) 0.1 0.0001 0.001 0.01 1 10 100 0.000001 0.01 1 10 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.001
mbrf30h150ctg, MBR30H150CTG http://onsemi.com 6 package dimensions to ? 220 fullpak case 221d ? 03 issue k style 3: pin 1. anode 2. cathode 3. anode dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y to ? 220 case 221a ? 09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. style 6: pin 1. anode 2. cathode 3. anode 4. cathode dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mbrf30h150ct/d fullpak and switchmode are trademarks of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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