1 dual n-channel 60-v (d-s) mosfet features ? halog en-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 175 c maximum junction temperature ? 100 % r g test ed ? compliant to rohs directive 2002/95/ec product s ummary v ds (v) r ds( on) ( )i d (a ) q g (t yp.) 60 0.041 at v gs = 1 0 v 6.5 9.2 nc 0.052 at v gs = 4.5 v 5.8 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 t op view 2 3 4 1 n-channel mosfet g 1 d 1 s 1 n-channel mosfet g 2 d 2 s 2 notes: a. surfa ce mounted on 1" x 1" fr4 board. b. t = 10 s. c. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. d. maximum under steady state conditions is 110 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted p arameter symbol limit unit drain-source voltage v ds 60 v gat e-source voltage v gs 20 contin uous drain current (t j = 150 c) t c = 25 c i d 6.5 a t c = 70 c 5.5 t a = 25 c 5.3 a, b t a = 70 c 4.4 a, b pulsed dr ain current i dm 30 contin uous source drain diode current t c = 25 c i s 3.1 t a = 25 c 2 a, b a valanche current l = 0 1 mh i as 12 single-pulse a valanche energy e as 7.2 mj maximum power dissipation t c = 25 c p d 3.7 w t c = 70 c 2.6 t a = 25 c 2.4 a, b t a = 70 c 1.7 a, b ope rating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings p arameter symbol typical maximum unit maximum junction-to-ambient a, c t 10 s r thj a 50 62.5 c/w maximum junction-to-foot (drain) steady state r thjf 33 41 dt . www. daysemi.jp
2 no tes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. st resses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. s pecifications t j = 25 c, unless otherwise noted p arameter symbol test conditions min. typ. max. unit static drain-source breakdo wn voltage v ds v gs = 0 v , i d = 250 a 60 v v ds t emperature coefficient v ds /t j i d = 250 a 53 mv/c v gs( th) t emperature coefficient v gs(t h) /t j - 6. 7 gate-source threshold voltage v gs(t h) v ds = v gs , i d = 250 a 1.0 2.4 3.0 v gate-source leakage i gss v ds = 0 v , v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 60 v , v gs = 0 v 1 a v ds = 6 0 v, v gs = 0 v , t j = 55 c 10 on-state drain current a i d( on) v ds 5 v , v gs = 10 v 30 a drain-source on-state resistance a r ds( on) v gs = 10 v , i d = 5.3 a 0.033 0.041 v gs = 4 .5 v, i d = 4.7 a 0.041 0.052 forward transconductance a g fs v ds = 15 v , i d = 5.3 a 24 s dy namic b inpu t capacitance c is s v ds = 30 v , v gs = 0 v , f = 1 mhz 840 pf output capacitance c oss 71 re verse transfer capacitance c rs s 44 t otal gate charge q g v ds = 30 v , v gs = 10 v , i d = 5.3 a 17 25 nc v ds = 30 v, v gs = 5 v , i d = 5.3 a 9.2 12 gate-source charge q gs 3.3 gate- drain charge q gd 3.7 g ate resistance r g f = 1 mhz 3.1 6.5 9.5 tu r n - o n d e l ay t i m e t d( on) v dd = 30 v, r l = 6.8 i d ? 4.4 a, v gen = 4.5 v, r g = 1 20 30 ns rise time t r 120 180 turn-off delay time t d( off) 20 30 fall time t f 30 45 tu r n - o n d e l ay t i m e t d( on) v dd = 30 v, r l = 6.8 i d ? 4.4 a, v gen = 10 v , r g = 1 10 15 rise time t r 12 20 turn-off delay time t d( off) 25 40 fall time t f 10 15 drain -source body diode characteristics continuous source-drain diode current i s t c = 25 c 3.1 a pulse diode forward current a i sm 30 body diode v oltage v sd i s = 2 a 0.8 1.2 v body diode reverse recovery time t rr i f = 4.4 a, di/dt = 100 a/s, t j = 2 5 c 25 50 ns body diode reverse recovery charge q rr 25 50 nc reverse recovery fall time t a 18 ns re verse recovery rise time t b 7 dt . www. daysemi.jp
3 typica l characteristics 25 c, unless otherwise noted ou tput characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 10 v thru 5 v 4 v v ds - drain-to-source voltage (v) - drain current (a) i d 3 v 0.000 0.020 0.040 0.060 0.080 0.100 0 5 10 15 20 25 30 v gs = 10 v i d - drain current (a) v gs = 4.5 v r ds (on) - on-resistance (m ) 0 2 4 6 8 10 0 4 8 12 16 20 i d = 5.3 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 48 v v ds = 30 v tran sfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 c t c = 150 c - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 200 400 600 800 1000 1200 0 102030405060 c rss c os s c is s v ds - drain-to-source voltage (v) c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 175 v gs = 10 v t j - junction temperature (c) r ds (on) - on-resistance (normalized) v gs = 4.5 v i d = 5.3 a dt . www. daysemi.jp
4 ty pical characteristics 25 c, unless otherwise noted sou rce-drain diode forward voltage threshold voltage 1.0 1.4 1 10 30 0 0.2 0.4 0.6 0.8 t j = 175 c v sd - source-to-drain voltage (v) - source current (a) i s 1.2 t j = 25 c 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a t j - temperature (c) v gs (th) (v) on-resista nce vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.02 0.04 0.06 0.08 0.10 02468 10 i d = 5.3 a v gs - gate-to-source voltage (v) r ds (on) - drain-to-source on-resistance ( ) t j = 25 c t j = 150 c 0 15 25 5 10 p ower (w) t ime (s) 20 10 1000 1 0.1 0.01 100 safe op erating area, junction-to-ambient 100 1 0.01 1 10 100 0.01 10 - drain current (a) i d 0.1 0.1 1 ms 10 ms 100 ms limited b y r ds (on) * v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds (on) is specified t a = 25 c single pulse 100 s dc 10 s 1 s dt . www. daysemi.jp
5 typica l characteristics 25 c, unless otherwise noted * the power dissipation p d is b ased on t j(max ) = 17 5 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 175 i d - drain current (a) t c - case temperature (c) po wer, junction-to-case 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175 t c - case temperature (c) p ower (w) single pulse avalanche capability 100 0.000001 0.001 1 10 0.0001 t a - t ime in avalanche (s) i c - peak avalanche current (a) t a = l i d bv - v dd 0.00001 dt . www. daysemi.jp
6 ty pical characteristics 25 c, unless otherwise noted norm alized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) nor malized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r th ja = 85 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm n ormalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) nor malized effective transient thermal impedance 0.02 0.05 single pulse dt . www. daysemi.jp
www. daysemi.jp 1 dim millimeters inch es min max min max a 1.35 1.7 5 0.053 0.069 a 1 0.10 0.2 0 0.00 4 0.008 b 0.35 0.51 0.014 0.020 c 0.19 0.25 0.0075 0.010 d 4.80 5.00 0.189 0.196 e 3.80 4.00 0.150 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 l 0.50 0.93 0.020 0.037 q0 8 0 8 s 0.44 0.64 0.018 0.026 ecn: c-06527-rev. i, 11-sep-06 dwg: 5498 4 3 1 2 5 6 8 7 h e h x 45 c all le a d s q 0.101 mm 0.004" l ba 1 a e d 0.25 mm (g a ge pl a ne) s oic (narrow): 8-lead jedec p a rt n u m b er: m s -012 s package information
www .daysemi.jp 1 application note recommen ded minimum pads for so-8 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.71 1) 0.050 (1.270) 0.022 (0.559) return to index r e turn to index application note
legal disclaimer notice www. daysemi.jp 1 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.daysemi.jp revision: 02-oct-12 1 document number: 72610 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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