unisonic technologies co., ltd ut3p01z power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r502-341.b p channel power mosfet ? description the ut3p01z uses utc advanced technology to provide excellent r ds (on), low gate charge and operated with low gate voltages. this device can be applied to general-purpose switching devices applications. ? features * r ds(on) = 8 ? @ v gs = -4 v * ultra low gate charge ( typical 1.43 nc ) * low reverse transfer capacitance ( c rss = typical 1.8 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness * halogen free ? symbol 2.gate 1.source 3.drain ? ordering information pin assignment ordering number package 1 2 3 packing UT3P01ZG-AL3-R sot-323 s g d tape reel ut3p01zg-an3-r sot-523 s g d tape reel ut3p01zg-ae2-r sot-23-3 s g d tape reel ? marking
ut3p01z power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-341.b ? absolute maximum ratings (ta = 25 c) parameter symbol ratings unit drain-source voltage v dss -30 v gate-source voltage v gss 10 v dc -0.1 a drain current pulse(note 2) i d -0.4 a sot-523 150 mw power dissipation sot-323 / sot-23-3 p d 200 mw storage temperature t stg -55 ~ +150 c note: 1. 2. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width 10 s, duty cycle 1% ? electrical characteristics (ta=25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-1ma -30 v drain-source leakage current i dss v ds =-30v,v gs =0v -1 a gate-source leakage current i gss v gs =8v, v ds =0v 10 a on characteristics cutoff threshold voltage v gs(off) v ds =-10v, i d =-100a -0.4 -1.4 v v gs =-4v, i d =-50ma 8 10.4 ? v gs =-2.5v, i d =-30ma 11 15.4 ? static drain-source on-resistance r ds(on) v gs =-1.5v, i d =-1ma 27 54 ? forward transconductance g fs v ds =-10v, i d =-50ma 80 110 ms dynamic parameters input capacitance c iss 7.5 pf output capacitance c oss 5.7 pf reverse transfer capacitance c rss v ds =-10v, v gs =0 v, f=1.0mhz 1.8 pf switching parameters total gate charge q g 1.43 nc gate source charge q gs 0.18 nc gate drain charge q gd v ds =-10v, v gs =-10v, i d =-100ma 0.25 nc turn-on delay time t d(on) 24 ns turn-on rise time t r 55 ns turn-off delay time t d(off) 120 ns turn-off fall-time t f see specified test circuit 130 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =-100ma, v gs =0v -0.83 -1.2 v
ut3p01z power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-341.b ? switching time test circuit v in d.u.t. 0 v v out r l =300 v dd =-15v pulse width= 10 s duty cycle 1% g s d r g= 50 i d =-50ma -4v
ut3p01z power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-341.b ? typical characteristics drain current vs. drain-source breakdown voltage 0 drain current, i d (ma) drain-source breakdown voltage, bv dss (v) 0 0.2 0 0 50 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 1.0 100 150 200 250 300 0.4 0.8 1.2 1.6 2.0 1.6 5 10 15 20 25 30 35 0.4 0.6 0.8 1.2 1.4 40 45 50 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) 0 drain current, i d (ma) 0.2 0 drain-source on-state resistance characteristics drain current, i d (ma) drain to source voltage, v ds (mv) 0 10 20 0.4 0.6 0.8 1.0 1.2 20 40 60 80 100 120 40 100 180 200 30 40 50 v gs =-1.5v i d =-1ma v gs =-2.5v i d =-30ma v gs =-4v i d =50ma 20 60 80 120 140 160 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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