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1/12 april 2004 stq2hnk60zr-ap STF2HNK60Z - std2hnk60z-1 n-channel 600v - 4.4 ? - 2.0a to-92/to-220fp/ipak zener-protected supermesh? mosfet typical r ds (on) = 4.4 ? extremely high dv/dt capability esd improved capability 100% avalanche tested new high voltage benchmark gate charge minimized description the supermesh? series is obtained through an extreme optimization of st?s well established strip- based powermesh? layout. in addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. such series comple- ments st full range of high voltage mosfets in- cluding revolutionary mdmesh? products. applications ac adaptors and battery chargers swith mode power supplies (smps) order codes type v dss r ds(on) i d p w stq2hnk60zr-ap std2hnk60z-1 STF2HNK60Z 600 v 600 v 600 v <4.8 ? <4.8 ? <4.8 ? 0.5 a 2.0 a 2.0 a 3w 45 w 20 w part number marking package packaging std2hnk60z-1 d2hnk60z ipak tube stq2hnk60zr-ap q2hnk60zr to-92 ammopak STF2HNK60Z f2hnk60z to-220fp tube to-220fp 3 2 1 ipak to-92 (ammopack) 1 2 3 internal schematic diagram
stq2hnk60zr-ap - STF2HNK60Z - std2hnk60z-1 2/12 absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 2a,di/dt 200 a/s, v dd v (br)dss ,t j t jmax. (*) current limited by package thermal data avalanche characteristics gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device ? s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ? s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit ipak to-220fp to-92 v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k ? ) 600 v v gs gate- source voltage 30 v i d drain current (continuous) at t c =25 c 2.0 2.0 (*) 0.5 a i d drain current (continuous) at t c = 100 c 1.26 1.26 (*) 0.32 a i dm ( ) drain current (pulsed) 8 8 (*) 2 a p tot total dissipation at t c =25 c 45 20 3 w derating factor 0.36 0.16 0.025 w/ c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k ?) 2000 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (dc) -- 2500 -- v t j t stg operating junction temperature storage temperature -55 to 150 c ipak to-220fp to-92 rthj-case thermal resistance junction-case max 2.77 6.25 -- c/w rthj-amb thermal resistance junction-ambient max 100 62.5 120 c/w rthj-lead thermal resistance junction-lead max -- -- 40 c/w t l maximum lead temperature for soldering purpose 300 300 260 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 2a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 120 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v
3/12 stq2hnk60zr-ap - STF2HNK60Z - std2hnk60z-1 electrical characteristics (t case =25 c unless otherwise specified) on/off dynamic source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =1ma,v gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating,t c = 125 c 1 50 a a i gss gate-body leakage current (v ds =0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds =v gs ,i d =50a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs =10v,i d = 1.0 a 4.4 4.8 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d = 1.0 a 1.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v,f=1mhz,v gs = 0 280 38 7 pf pf pf c oss eq. (3) equivalent output capacitance v gs =0v,v ds = 0v to 480v 30 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =300v,i d =1.0a r g =4.7 ? v gs =10v (resistive load see, figure 3) 10 30 23 50 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =480v,i d =2.0a, v gs =10v 11 2.25 6 15 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 2.0 8.0 a a v sd (1) forwardonvoltage i sd =2.0a,v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 2.0 a, di/dt = 100 a/s v dd =20v,t j =25 c (see test circuit, figure 5) 178 445 5 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =13a,di/dt=100a/s v dd =20v,t j = 150 c (see test circuit, figure 5) 200 500 5 ns nc a
stq2hnk60zr-ap - STF2HNK60Z - std2hnk60z-1 4/12 thermal impedance for ipak thermal impedance for to-220fp thermal impedance for to-92 safe operating area for to-92 safe operating area for to-220fp safe operating area for ipak
5/12 stq2hnk60zr-ap - STF2HNK60Z - std2hnk60z-1 capacitance variations gate charge vs gate-source voltage transfer characteristics transconductance output characteristics static drain-source on resistance
stq2hnk60zr-ap - STF2HNK60Z - std2hnk60z-1 6/12 normalized bvdss vs temperature normalized on resistance vs temperature normalized gate thereshold voltage vs temp. source-drain diode forward characteristics maximum avalanche energy vs temperature
7/12 stq2hnk60zr-ap - STF2HNK60Z - std2hnk60z-1 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
stq2hnk60zr-ap - STF2HNK60Z - std2hnk60z-1 8/12 dim. mm. inch min. typ max. min. typ. max. a 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 d 4.45 4.95 0.175 0.194 e 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 l 12.70 15.49 0.50 0.610 r 2.16 2.41 0.085 0.094 s1 0.92 1.52 0.036 0.060 w 0.41 0.56 0.016 0.022 v5 5 to-92 mechanical data
9/12 stq2hnk60zr-ap - STF2HNK60Z - std2hnk60z-1 dim. mm. inch min. typ max. min. typ. max. a1 4.45 4.95 0.170 0.194 t 3.30 3.94 0.130 0.155 t1 1.6 0.06 t2 2.3 0.09 d 0.41 0.56 0.016 0.022 p0 12.5 12.7 12.9 0.49 0.5 0.51 p2 5.65 6.35 7.05 0.22 0.25 0.27 f1, f2 2.44 2.54 2.94 0.09 0.1 0.11 delta h -2 2 -0.08 0.08 w 17.5 18 19 0.69 0.71 0.74 w0 5.7 6 6.3 0.22 0.23 0.24 w1 8.5 9 9.25 0.33 0.35 0.36 w2 0.5 0.02 h 18.5 20.5 0.72 0.80 h0 15.5 16 16.5 0.61 0.63 0.65 h1 25 0.98 d0 3.8 4 4.2 0.15 0.157 0.16 t0.90.035 l110.43 l1 3 0.11 delta p -1 1 -0.04 0.04 to-92 ammopack
stq2hnk60zr-ap - STF2HNK60Z - std2hnk60z-1 10/12 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
11/12 stq2hnk60zr-ap - STF2HNK60Z - std2hnk60z-1 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
stq2hnk60zr-ap - STF2HNK60Z - std2hnk60z-1 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

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