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1. product pro?le 1.1 general description a 500 w to 600 w ldmos power transistor for broadcast applications and industrial applications in the hf to 500 mhz band. 1.2 features n typical cw performance at frequency of 225 mhz, a supply voltage of 50 v and an i dq of 1000 ma: u average output power = 500 w u power gain = 26.5 db u ef?ciency = 70 % n easy power control n integrated esd protection n excellent ruggedness n high ef?ciency n excellent thermal stability n designed for broadband operation (10 mhz to 500 mhz) n compliant to directive 2002/95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications n industrial, scienti?c and medical applications n broadcast transmitter applications BLF574 hf / vhf power ldmos transistor rev. 02 24 february 2009 product data sheet table 1. application information mode of operation f v ds p l g p h d (mhz) (v) (w) (db) (%) cw 225 50 500 26.5 70 108 50 600 27.5 73 caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 2 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 2. pinning information [1] connected to ?ange. 3. ordering information 4. limiting values 5. thermal characteristics [1] r th(j-c) is measured under rf conditions. table 2. pinning pin description simpli?ed outline graphic symbol 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] 5 12 4 3 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLF574 - ?anged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 110 v v gs gate-source voltage - 0.5 +11 v i d drain current - 56 a t stg storage temperature - 65 +150 c t j junction temperature - 225 c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 c; p l = 400 w 0.23 k/w
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 3 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 6. characteristics table 6. dc characteristics t j = 25 c; per section unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 2.5 ma 110 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 250 ma 1.25 1.7 2.25 v v gsq gate-source quiescent voltage v ds = 50 v; i d = 500 ma 1.35 1.85 2.35 v i dss drain leakage current v gs =0v; v ds =50v - - 2.8 m a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 29 37.5 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 280 na g fs forward transconductance v ds =10v; i d = 12.5 a - 17 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 8.33 a - 0.14 - w c rs feedback capacitance v gs =0v; v ds =50v; f=1mhz - 1.5 - pf c iss input capacitance v gs =0v; v ds =50v; f=1mhz - 204 - pf c oss output capacitance v gs =0v; v ds =50v; f=1mhz -72-pf table 7. rf characteristics mode of operation: cw; f = 225 mhz; rf performance at v ds =50v;i dq = 1000 ma for total device; t case =25 c; unless otherwise speci?ed; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 400 w 25 26.5 28 db rl in input return loss p l = 400 w 13 20 - db h d drain ef?ciency p l = 400 w 66 70 - %
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 4 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 6.1 ruggedness in class-ab operation the BLF574 is capable of withstanding a load mismatch corresponding to vswr = 13 : 1 through all phases under the following conditions: v ds = 50 v; i dq = 1000 ma; p l = 400 w; f = 225 mhz. v gs = 0 v; f = 1 mhz. fig 1. output capacitance as a function of drain-source voltage; typical values per section v ds (v) 050 40 20 30 10 001aaj126 200 300 100 400 500 c oss (pf) 0
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 5 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 7. application information 7.1 rf performance rf performance in a 500 w application circuit at 225 mhz. 7.1.1 1-tone cw v ds = 50 v; i dq = 1000 ma; f = 225 mhz. v ds = 50 v; f = 225 mhz. (1) i dq = 400 ma (2) i dq = 600 ma (3) i dq = 800 ma (4) i dq = 1000 ma (5) i dq = 1200 ma (6) i dq = 1400 ma (7) i dq = 1800 ma fig 2. power gain and drain ef?ciency as functions of load power; typical values fig 3. power gain as function of load power; typical values 001aaj127 p l(pep) (w) 0 600 400 200 26 24 28 30 g p (db) 22 40 20 60 80 0 h d (%) g p h d p l (w) 0 500 400 200 300 100 001aaj128 26 24 28 30 g p (db) 22 (7) (6) (5) (4) (3) (2) (1)
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 6 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 7.1.2 2-tone cw v ds = 50 v; i dq = 1000 ma; f = 225 mhz. (1) p l(1db) = 57.32 dbm (540 w) fig 4. load power as function of source power; typical values p s (dbm) 24 34 32 28 30 26 001aaj129 54 56 52 58 60 p l (dbm) 50 p l ideal p l (1) v ds = 50 v; i dq = 1000 ma; f 1 = 224.95 mhz; f 2 = 225.05 mhz. v ds = 50 v; f 1 = 224.95 mhz; f 2 = 225.05 mhz. (1) i dq = 600 ma (2) i dq = 800 ma (3) i dq = 1000 ma (4) i dq = 1200 ma (5) i dq = 1400 ma fig 5. power gain and drain ef?ciency as functions of peak envelope load power; typical values fig 6. third order intermodulation distortion as a function of peak envelope load power; typical values 001aaj130 p l(pep) (w) 0 800 400 200 600 26 24 28 30 g p (db) 22 40 20 60 80 0 h d (%) g p h d p l(pep) (w) 0 800 600 200 400 001aaj131 - 40 - 60 - 20 0 imd3 (dbc) - 80 (1) (2) (3) (4) (5)
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 7 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 7.1.3 application circuit [1] american technical ceramics type 100b or capacitor of same quality. table 8. list of components for application circuit, see figure 7 . printed-circuit board (pcb): rogers 5880; e r = 2.2 f/m; height = 0.79 mm; cu (top/bottom metallization); thickness copper plating = 35 m m. component description value remarks c1, c2, c23, c24 multilayer ceramic chip capacitor 100 pf [1] c3 multilayer ceramic chip capacitor 24 pf [1] c4, c5 multilayer ceramic chip capacitor 39 pf [1] c6, c9 multilayer ceramic chip capacitor 4.7 m f tdk4532x7r1e475mt020u c7, c8, c10, c11 multilayer ceramic chip capacitor 1 nf [1] c12, c16 electrolytic capacitor 220 m f; 63 v c13, c15 multilayer ceramic chip capacitor 62 pf [1] c14 multilayer ceramic chip capacitor 15 pf [1] c17, c19 multilayer ceramic chip capacitor 47 pf [1] c18 multilayer ceramic chip capacitor 33 pf [1] c20, c22 multilayer ceramic chip capacitor 10 pf [1] c21 multilayer ceramic chip capacitor 18 pf [1] l1, l2, l3, l4 3 turns 1 mm copper wire d = 3 mm; length = 3 mm l5, l6 stripline - (l w) 125 mm 7mm l7, l8, l9, l10 stripline - (l w) 8 mm 15 mm l11, l12 stripline - (l w) 132 mm 7mm r1, r2 metal ?lm resistor 10 w ; 0.6 w r3, r4 metal ?lm resistor 3 w ; 0.6 w t1, t2, t3, t4 semi rigid coax 50 w ; 120 mm ez-141-al-tp-m17
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 8 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor fig 7. component layout for class-ab application circuit 001aaj132 t1 c6 c9 c7 c8 r1 l6 c4 c5 c3 c1 c2 l5 l8 l7 r2 t2 + + c10 c11 l3 l2 c16 c12 r4 c19 c17 c18 l4 l1 r3 l11 c23 c24 c13 c14 c15 c20 c21 c22 l12 t4 t3 l9 l10
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 9 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 7.2 reliability ttf (0.1 % failure fraction). (1) t j = 100 c (2) t j = 110 c (3) t j = 120 c (4) t j = 130 c (5) t j = 140 c (6) t j = 150 c (7) t j = 160 c (8) t j = 170 c (9) t j = 180 c (10) t j = 190 c (11) t j = 200 c fig 8. BLF574 electromigration (i d , total device) 001aaj133 10 2 10 10 4 10 3 10 5 years 1 i dc (a) 0 20 16 812 4 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11)
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 10 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 8. test information 8.1 impedance information table 9. typical impedance simulated z s and z l test circuit impedances. f z s z l mhz w w 225 3.2 + j2.5 7.5 + j4.0 fig 9. de?nition of transistor impedance 001aaf059 drain z l z s gate
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 11 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 8.2 rf performance the following ?gures are measured in a class-ab production test circuit. 8.2.1 1-tone cw v ds = 50 v; i dq = 1000 ma; f = 225 mhz. v ds = 50 v; f = 225 mhz. (1) i dq = 400 ma (2) i dq = 600 ma (3) i dq = 800 ma (4) i dq = 1000 ma (5) i dq = 1200 ma (6) i dq = 1400 ma (7) i dq = 1800 ma fig 10. power gain and drain ef?ciency as functions of load power; typical values fig 11. power gain as function of load power; typical values p l (w) 0 500 400 200 300 100 001aaj134 26 24 28 30 g p (db) 22 40 20 60 80 0 h d (%) g p h d p l (w) 0 500 400 200 300 100 001aaj135 26 24 28 30 g p (db) 22 (7) (6) (5) (4) (3) (2) (1)
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 12 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 8.2.2 2-tone cw v ds = 50 v; i dq = 1000 ma; f = 225 mhz. (1) p l(1db) = 56.43 dbm (440 w) fig 12. load power as function of source power; typical values p s (dbm) 24 34 32 28 30 26 001aaj136 54 56 52 58 60 p l (dbm) 50 p l ideal p l (1) v ds = 50 v; i dq = 1000 ma; f 1 = 224.95 mhz; f 2 = 225.05 mhz. v ds = 50 v; f 1 = 224.95 mhz; f 2 = 225.05 mhz. (1) i dq = 600 ma (2) i dq = 800 ma (3) i dq = 1000 ma (4) i dq = 1200 ma (5) i dq = 1400 ma fig 13. power gain and drain ef?ciency as functions of peak envelope load power; typical values fig 14. third order intermodulation distortion as a function of peak envelope load power; typical values 001aaj137 p l(pep) (w) 0 600 400 200 500 300 100 26 24 28 30 g p (db) 22 40 20 60 80 0 h d (%) g p h d 001aaj138 p l(pep) (w) 0 600 400 200 500 300 100 - 40 - 60 - 20 0 imd3 (dbc) - 80 (4) (5) (1) (2) (3)
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 13 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 8.2.3 test circuit [1] american technical ceramics type 100b or capacitor of same quality. table 10. list of components for production test circuit, see figure 15 and figure 16 . printed-circuit board (pcb): rogers 5880; e r = 2.2 f/m; height = 0.79 mm; cu (top/bottom metallization); thickness copper plating = 35 m m. component description value remarks c1, c2, c20, c21 multilayer ceramic chip capacitor 100 pf [1] c3 multilayer ceramic chip capacitor 24 pf [1] c4, c5 multilayer ceramic chip capacitor 39 pf [1] c6, c7, c10, c11 multilayer ceramic chip capacitor 1 nf [1] c8, c9 multilayer ceramic chip capacitor 4.7 m f [1] tdk4532x7r1e475mt020u c12, c13 electrolytic capacitor 220 m f; 63 v c14, c15 multilayer ceramic chip capacitor 47 pf [1] c16 multilayer ceramic chip capacitor 33 pf [1] c17 multilayer ceramic chip capacitor 18 pf [1] c18, c19 multilayer ceramic chip capacitor 10 pf [1] c22 multilayer ceramic chip capacitor 15 pf [1] c23, c24 multilayer ceramic chip capacitor 62 pf [1] l1, l2, l3, l4 3 turns 1 mm copper wire d = 3 mm; length = 2 mm l5, l6 stripline - (l w) 125 mm 7mm l7, l8, l9, l10 stripline - (l w) 8 mm 15 mm l11, l12 stripline - (l w) 132 mm 7mm r1, r2 metal ?lm resistor 10 w ; 0.6 w r3, r4 metal ?lm resistor 3 w ; 0.6 w t1, t2, t3, t4 semi rigid coax 50 w ; 120 mm ez-141-al-tp-m17
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 14 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor fig 15. class-ab common-source production test circuit 001aaj139 c3 c1 t1 input 50 w output 50 w t2 t3 t4 c2 c20 c18 c19 c21 c4 c5 c22 c24 c23 c14 c15 c10 c11 c12 v dd v dd v gg v gg l3 c8 c7 r2 r1 c6 c9 l1 l2 l4 r3 l4 c13 c16 c17 l6 l5 l8 l7 l9 l10 l11 l12 fig 16. component layout for class-ab production test circuit 001aaj140 t1 c8 c9 c7 c6 r2 37 mm 11 mm c4 c5 c3 c1 c2 r1 t2 c11 c10 l2 l1 r4 r3 c12 c13 c15 c14 c16 l4 l3 c21 c23 c22 c24 c18 c17 c19 t4 t3 11 mm 3 mm 5 mm c20
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 15 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 9. package outline fig 17. package outline sot539a references outline version european projection issue date iec jedec eiaj sot539a 00-03-03 99-12-28 0 5 10 mm scale flanged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a p a f b e d u 2 l h q c 5 12 4 3 d 1 e a w 1 ab m m m q u 1 h 1 c b m m w 2 c e 1 m w 3 unit a mm d b 11.81 11.56 0.15 0.08 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 5.33 3.96 c e u 2 0.25 0.25 0.51 w 3 35.56 qw 2 w 1 f 1.75 1.50 u 1 41.28 41.02 h 1 25.53 25.27 p 3.30 3.05 q 2.31 2.01 ee 1 9.50 9.30 inches 0.465 0.455 0.006 0.003 1.242 1.218 d 1 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.210 0.156 0.010 0.010 0.020 1.400 0.069 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.091 0.079 0.374 0.366 h 3.73 2.72 0.147 0.107 l dimensions (millimetre dimensions are derived from the original inch dimensions)
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 16 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 10. abbreviations 11. revision history table 11. abbreviations acronym description cw continuous wave edge enhanced data rates for gsm evolution gsm global system for mobile communications hf high frequency ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor rf radio frequency ttf time to failure vhf very high frequency vswr voltage standing-wave ratio table 12. revision history document id release date data sheet status change notice supersedes BLF574_2 20090224 product data sheet - BLF574_1 modi?cations: ? data sheet status updated from preliminary to product BLF574_1 20081208 preliminary data sheet - -
BLF574_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 24 february 2009 17 of 18 nxp semiconductors BLF574 hf / vhf power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors BLF574 hf / vhf power ldmos transistor ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 24 february 2009 document identifier: BLF574_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 ruggedness in class-ab operation. . . . . . . . . . 4 7 application information. . . . . . . . . . . . . . . . . . . 5 7.1 rf performance . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.1 1-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.2 2-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.1.3 application circuit . . . . . . . . . . . . . . . . . . . . . . . 7 7.2 reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 10 8.1 impedance information . . . . . . . . . . . . . . . . . . 10 8.2 rf performance . . . . . . . . . . . . . . . . . . . . . . . 11 8.2.1 1-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 8.2.2 2-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 8.2.3 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 17 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13 contact information. . . . . . . . . . . . . . . . . . . . . 17 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

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