2sc5231a no. a1077-1/8 features ? low-noise : nf=1.0db typ (f=1ghz) ? high gain : ? s21e ? 2 =12db typ (f=1ghz) ? high cut-off frequency : f t =7ghz typ ? ultrasmall-sized package permitting applied sets to be made small and slim speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 20 v collector-to-emitter voltage v ceo 10 v emitter-to-base voltage v ebo 2v collector current i c 70 ma collector dissipation p c 100 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7027a-002 ordering number : ena1077a 82212 tkim/51408ab tiim tc-00001355 sanyo semiconductors data sheet 2sc5231a npn epitaxial planar silicon transistor vhf to uhf wide-band low-noise ampli er applications http://www.sanyosemi.com/en/network/ 3 2 1 product & package information ? package : smcp ? jeita, jedec : sc-75, sot-416 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection 1 : base 2 : emitter 3 : collector sanyo : smcp 1.6 0.3 0.1 0.2 0.5 0.5 1.6 0.8 0.4 0.1 min 0.4 0.6 0 to 0.1 0.75 12 3 2sc5231a-8-tl-e 2sc5231a-9-tl-e tl c lot no. rank lot no.
2sc5231a no. a1077-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =10v, i e =0a 1.0 a emitter cutoff current i ebo v eb =1v, i c =0a 10 a dc current gain h fe v ce =5v, i c =20ma 60* 270* gain-bandwidth product f t v ce =5v, i c =20ma 5 7 ghz output capacitance cob v cb =10v, f=1mhz 0.7 1.2 pf reverse transfer capacitance cre 0.45 pf forward transfer gain ? s21e ? 2 1v ce =5v, i c =20ma, f=1ghz 9 12 db ? s21e ? 2 2v ce =2v, i c =3ma, f=1ghz 8.5 db noise figure nf v ce =5v, i c =7ma, f=1ghz 1.0 1.8 db * : the 2sc5231a is classi ed by 20ma h fe as follows : rank 7 8 9 h fe 60 to 120 90 to 180 135 to 270 ordering information device package shipping memo 2sc5231a-8-tl-e smcp 3,000pcs./reel pb free 2sc5231a-9-tl-e smcp 3,000pcs./reel h fe -- i c collector current, i c -- ma dc current gain, h fe cre -- v cb collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf collector current, i c -- ma gain-bandwidth product, f t -- ghz f t -- i c cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cre -- pf itr07965 f=1mhz itr07966 f=1mhz 35 3 2 1.0 7 35 2 0.1 7 72 10 35 3 2 1.0 7 35 2 0.1 7 72 10 1.0 0.1 2 3 5 7 5 7 2 3 1.0 0.1 2 3 5 7 5 7 2 3 itr07964 23 3 57 7 10 1.0 7 100 5 22 7 10 1.0 5 7 5 2 3 2 v ce =5v itr07968 100 10 3 5 3 2 1.0 7 3 5 722 10 5 7 100 2 3 5 7 5 7 2 3 v ce =5v
2sc5231a no. a1077-3/8 ? s21e ? 2 -- i c collector current, i c -- ma forward transfer gain, ? s21e ? 2 -- db collector dissipation, p c -- mw p c -- ta ambient temperature, ta -- c collector current, i c -- ma noise figure, nf -- db nf -- i c itr07967 0 14 12 10 8 6 4 2 357 1.0 23 57 10 100 22 357 v ce =5v f=1ghz 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 itr07969 v ce =2v itr07963 3 5 3 2 1.0 7 3 5 722 10 5 7 100 0 2 4 6 12 8 10 v ce =5v f=1ghz
2sc5231a no. a1077-4/8 s11e f=100mhz, f=200mhz to 2000mhz(200mhz step) s21e f=100mhz, f=200mhz to 2000mhz(200mhz step) s12e f=100mhz, f=200mhz to 2000mhz(200mhz step) s22e f=100mhz, f=200mhz to 2000mhz(200mhz step) j50 j25 j10 0 10 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 250 v ce =2v i c =3ma 90 120 150 180 --150 --120 --90 --30 --60 0 60 30 20 25 15 10 5 0.1ghz 0.1ghz 2.0ghz v ce =5v i c =20ma 90 120 150 180 --150 --120 --90 --30 --60 0 60 30 0.04 0.08 0.16 0.12 0.2 0.1ghz v ce =2v i c =3ma j50 j25 j10 0 10 25 --j10 --j25 --j50 --j100 --j150 --j200 --j250 j100 j150 j200 j250 100 150 250 2.0ghz 0.1ghz 50 v ce =5v i c =7ma itr07970 itr07971 itr07972 itr07973 0.1ghz 25 0.1ghz 2.0ghz 2.0ghz v ce =5v i c =7ma 0.1ghz v ce =2v i c =3ma 2.0ghz 2.0ghz 2.0ghz 2.0ghz 2.0ghz v ce =5v i c =20ma v ce =5v i c =7ma 0.1ghz 0.1ghz 0.1ghz 0.1ghz v ce =5v i c =20ma v ce =2v i c =3ma 2.0ghz 2.0ghz 50 2.0ghz v ce =5v i c =20ma v ce =5v i c =7ma 0.1ghz
2sc5231a no. a1077-5/8 s parameters (common emitter) v ce =5v, i c =7ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.786 -40.7 17.507 151.3 0.028 70.1 0.898 -20.4 200 0.677 -72.4 13.998 131.4 0.046 58.0 0.739 -33.4 400 0.546 -112.7 9.061 108.6 0.064 49.6 0.525 -43.7 600 0.492 -135.2 6.442 96.1 0.076 49.3 0.423 -46.7 800 0.473 -150.0 5.005 87.3 0.087 50.8 0.374 -44.4 1000 0.465 -160.0 4.073 80.4 0.099 52.6 0.346 -49.7 1200 0.457 -169.5 3.449 74.0 0.111 54.0 0.332 -51.6 1400 0.451 -176.2 2.989 68.6 0.124 55.2 0.321 -54.1 1600 0.449 177.8 2.658 63.8 0.138 56.6 0.319 -56.2 1800 0.454 172.5 2.378 58.4 0.151 56.7 0.313 -60.0 2000 0.460 167.1 2.154 54.0 0.166 56.7 0.311 -63.2 v ce =5v, i c =20ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.601 -65.8 28.967 137.1 0.023 64.1 0.757 -32.9 200 0.497 -103.7 19.309 116.6 0.035 57.0 0.534 -50.3 400 0.435 -139.6 10.891 98.6 0.050 58.7 0.345 -50.3 600 0.419 -156.6 7.461 89.3 0.065 61.3 0.280 -50.7 800 0.414 -166.6 5.695 82.5 0.081 63.1 0.251 -51.3 1000 0.413 -174.0 4.613 77.0 0.098 63.8 0.235 -52.9 1200 0.413 178.6 3.870 71.8 0.114 63.9 0.226 -55.1 1400 0.411 173.8 3.345 66.9 0.131 63.6 0.221 -57.7 1600 0.413 169.6 2.960 62.7 0.148 63.2 0.220 -60.2 1800 0.416 165.1 2.655 58.0 0.165 61.8 0.219 -64.8 2000 0.422 160.3 2.406 54.0 0.182 60.6 0.218 -68.3 v ce =2v, i c =3ma, z o =50 freq(mhz) ? s11 ? s11 ? s21 ? s21 ? s12 ? s12 ? s22 ? s22 100 0.888 -30.2 9.280 158.6 0.038 73.6 0.949 -15.1 200 0.815 -56.4 8.218 141.3 0.067 60.5 0.849 -26.9 400 0.690 -96.0 6.074 116.7 0.098 45.1 0.657 -41.1 600 0.616 -120.7 4.517 101.4 0.112 38.4 0.539 -47.6 800 0.584 -138.0 3.610 90.4 0.120 35.8 0.475 -51.2 1000 0.566 -150.7 2.995 81.9 0.125 35.7 0.434 -54.5 1200 0.555 -161.2 2.540 74.2 0.131 36.5 0.410 -57.5 1400 0.546 -169.3 2.213 67.5 0.137 38.4 0.393 -60.7 1600 0.541 -176.4 1.982 62.0 0.143 40.7 0.391 -64.0 1800 0.545 177.1 1.774 55.9 0.152 42.5 0.382 -67.8 2000 0.547 170.9 1.614 50.9 0.163 44.7 0.381 -72.1
2sc5231a no. a1077-6/8 embossed taping speci cation 2sc5231a-8-tl-e, 2sc5231a-9-tl-e
2sc5231a no. a1077-7/8 outline drawing land pattern example 2sc5231a-8-tl-e, 2sc5231a-9-tl-e mass (g) unit 0.003 * for reference mm unit: mm 0.5 0.5 0.7 1.3 0.7 0.7 0.6
2sc5231a ps no. a1077-8/8 this catalog provides information as of august, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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