typical characteristics v ds - drain source voltage (volts) i d (o n) - on-s tate drain cur rent (am p s ) 01 2 3 4 5 saturation characteristics 5v v gs= 10v 7v 8v 6v 4v 3v 9v on-resistance v gate-source voltage v gs -gate source voltage (volts) r ds(on) -drain source on-resistance ( w ) 11020 i d= 1a 0.5a 0.25a 0.1 1 10 normalised r ds(on) and v gs(th) v temperature normalise d r d s( on ) and v gs( t h ) -40 -20 0 20 40 60 80 120 100 140 160 d ra in-s ource re sist ance r d s( on) ga te t hresh old v ol tage v g s ( t h) t j -junction temperature (c) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 0.4 -80 -60 0 4 3 1 2 i d= 1a v gs= 10v i d= 1ma v gs= v ds transconductance v drain current i d - drain current (amps ) g f s - t ransconductance ( s ) 01 2 3 4 5 0.7 0.6 0.4 0.1 0 0.2 0.5 0.3 v ds= 10v q-charge (nc) v gs -g ate s ource v ol tage (v ol ts ) gate charge v gate-source voltage v dd = 20v 30v 50v 10 8 6 2 0 4 12 14 16 i d= 3a 0 0.5 1.0 1.5 2.0 2.5 3.0 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capaci tance ( p f ) c oss c iss c rss 0 10 20 30 40 50 60 40 20 80 100 ZVN2106G sot223 n-channel enhancement mode vertical dmos fet issue 3 C november 1995 features * 60 volt v ds *r ds(on) =2 w complementary type - zvp2106g partmarking detail - zvn2106 absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 710 ma pulsed drain current i dm 8a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 2.0 w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 2.4 v i d =1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 500 100 na m a v ds =60 v, v gs =0 v ds =48 v, v gs =0v, t=125c (2) on-state drain current (1) i d(on) 2av ds =18v, v gs =10v static drain-source on-state resistance (1) r ds(on) 2 w v gs =10v,i d =1a forward transconductance (1)(2) g fs 300 ms v ds =18v,i d =1a input capacitance (2) c iss 75 pf common source output capacitance (2) c oss 45 pf v ds =18 v, v gs =0v, f=1mhz reversetransfer capacitance(2) c rss 20 pf turn-on delay time (2)(3) t d(on) 7ns v dd ? 18v, i d =1a rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 12 ns fall time (2)(3) t f 15 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device ZVN2106G d d s g 3 - 386 3 - 385
typical characteristics v ds - drain source voltage (volts) i d (o n) - on-s tate drain cur rent (am p s ) 01 2 3 4 5 saturation characteristics 5v v gs= 10v 7v 8v 6v 4v 3v 9v on-resistance v gate-source voltage v gs -gate source voltage (volts) r ds(on) -drain source on-resistance ( w ) 11020 i d= 1a 0.5a 0.25a 0.1 1 10 normalised r ds(on) and v gs(th) v temperature normalise d r d s( on ) and v gs( t h ) -40 -20 0 20 40 60 80 120 100 140 160 d ra in-s ource re sist ance r d s( on) ga te t hresh old v ol tage v g s ( t h) t j -junction temperature (c) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 0.4 -80 -60 0 4 3 1 2 i d= 1a v gs= 10v i d= 1ma v gs= v ds transconductance v drain current i d - drain current (amps ) g f s - t ransconductance ( s ) 01 2 3 4 5 0.7 0.6 0.4 0.1 0 0.2 0.5 0.3 v ds= 10v q-charge (nc) v gs -g ate s ource v ol tage (v ol ts ) gate charge v gate-source voltage v dd = 20v 30v 50v 10 8 6 2 0 4 12 14 16 i d= 3a 0 0.5 1.0 1.5 2.0 2.5 3.0 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capaci tance ( p f ) c oss c iss c rss 0 10 20 30 40 50 60 40 20 80 100 ZVN2106G sot223 n-channel enhancement mode vertical dmos fet issue 3 C november 1995 features * 60 volt v ds *r ds(on) =2 w complementary type - zvp2106g partmarking detail - zvn2106 absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 60 v continuous drain current at t amb =25c i d 710 ma pulsed drain current i dm 8a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 2.0 w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 60 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 2.4 v i d =1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 500 100 na m a v ds =60 v, v gs =0 v ds =48 v, v gs =0v, t=125c (2) on-state drain current (1) i d(on) 2av ds =18v, v gs =10v static drain-source on-state resistance (1) r ds(on) 2 w v gs =10v,i d =1a forward transconductance (1)(2) g fs 300 ms v ds =18v,i d =1a input capacitance (2) c iss 75 pf common source output capacitance (2) c oss 45 pf v ds =18 v, v gs =0v, f=1mhz reversetransfer capacitance(2) c rss 20 pf turn-on delay time (2)(3) t d(on) 7ns v dd ? 18v, i d =1a rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 12 ns fall time (2)(3) t f 15 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device ZVN2106G d d s g 3 - 386 3 - 385
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