?2001 fairchild semiconductor corporation rev. a1, june 2001 KSC5302DM npn silicon transistor absolute maximum ratings t c =25 c unless otherwise noted thermal characteristics t c =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage 800 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 12 v i c collector current (dc) 2 a i cp *collector current (pulse) 5 a i b base current (dc) 1 a i bp *base current (pulse) 2 a p c power dissipation(t c =25 c) 25 w t j junction temperature 150 c t stg storage temperature - 55 ~ 150 c symbol characteristics rating unit r jc thermal resistance junction to case 5.0 c/w r ja junction to ambient 62.5 KSC5302DM high voltage & high speed power switch application ? high breakdown voltage :bv cbo =800v ? built-in free-wheeling diode makes efficient anti saturation operation ? suitable for half bridge light ballast applications ? no need to interest an h fe value because of low variable storage-time spread even though corner spirit product ? low base drive requirement c b e equivalent circuit 1 to-126 1. emitter 2.collector 3.base
?2001 fairchild semiconductor corporation rev. a1, june 2001 KSC5302DM electrical characteristics t c =25 c unless otherwise noted *pulse test : pulse width=5ms, duty cycles 10% symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =1ma, i e =0 800 - - v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 400 - - v bv ebo emitter cut-off current i e =1ma, i c =0 12 - - v i cbo collector cut-off current v cb =500v, i e =0 - - 10 a i ebo emitter cut-off current v eb = 9v, i c = 0 - - 10 a h fe1 h fe2 dc current gain v ce =1v, i c =0.4a v ce =1v,i c =1a 20 10 - - - - v ce (sat) collector-emitter saturation voltage i c =0.4a, i b =0.04a i c =1a, i b =0.2a - - - - 0.4 0.5 v v v be (sat) collector-emitter saturation voltage i c =0.4a, i b =0.04a i c =1a, i b =0.2a - - - - 0.9 1.0 v v c ob output capacitance vcb = 10v, f=1mhz - - 75 pf t on turn on time v cc =300v, i c =1a i b1 = 0.2a, i b2 =-0.5a r l = 300 ? - - 150 ns t stg storage time - - 2 s t f fall time - - 0.2 s t stg storage time v cc =15v, v z =300v i c = 0.8a, i b1 = 0.16a i b2 = -0.16a, l c =200 h - - 2.35 s t f fall time - - 150 ns v f diode forward voltage i f = 0.4a i f = 1a - - - - 1.2 1.5 v v t rr * reverse recovery time (di/dt = 10a/ s) i f = 0.2a i f = 0.4a i f = 1a - - - 800 1 1.4 - - - ns s s
?2001 fairchild semiconductor corporation KSC5302DM rev. a1, june 2001 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. dc current gain figure 4. base-emitter saturation voltage collector-emitter saturation voltage figure 5. collector-emitter saturation voltage figure 6. base-emitter saturation voltage 012345678910 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i b = 100ma i b = 120ma i b = 80ma i b = 180ma i b = 160ma i b = 140ma i b = 200ma i b = 60ma i b = 40ma i b = 0 i c [a], collector current v ce [v], collector-emitter voltage 0.01 0.1 1 10 1 10 100 -25 o c 25 o c t a = 125 o c v ce = 5v h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 1 10 100 -20 o c 25 o c t a = 125 o c v ce = 1v h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 -20 o c 25 o c t a = 125 o c i c = 5i b v ce (sat)[v], saturation voltage i c [a], collector current 0.01 0.1 1 10 0.1 1 10 -20 o c 25 o c t a = 125 o c i c = 5i b v be (sat)[v], saturation voltage i c [a], collector current
?2001 fairchild semiconductor corporation KSC5302DM rev. a1, june 2001 typical characteristics (continued) figure 7. switching time figure 8. collector output capacitance figure 9. reverse recovery time figure 10. forward diode voltage 0.1 1 10 0.01 0.1 1 10 v cc = 300v i c = 5i b1 = -2.5i b2 t f t stg t stg , t f [ s], time i c [a], collector current 110100 1 10 100 1000 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage 0.2 0.4 0.6 0.8 1.0 0.8 1.0 1.2 1.4 1.6 di/dt = 10a/ s t rr [ s], reverse recovery time i f [a], forward current 0.01 0.1 1 10 0.1 1 10 v f [v], forward diode voltage i f [a], forward diode current
package demensions ?2001 fairchild semiconductor corporation rev. a1, june 2001 KSC5302DM dimensions in millimeters 3.25 0.20 8.00 0.30 ?.20 0.10 0.75 0.10 #1 0.75 0.10 2.28typ [2.28 0.20] 2.28typ [2.28 0.20] 1.60 0.10 11.00 0.20 3.90 0.10 14.20max 16.10 0.20 13.06 0.30 1.75 0.20 (0.50) (1.00) 0.50 +0.10 ?.05 to-126
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