?2001 fairchild semiconductor corporation rev. a1, june 2001 KSC5302DI npn silicon transistor absolute maximum ratings t c =25 c unless otherwise noted thermal characteristics t c =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage 800 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 12 v i c collector current (dc) 2 a i cp *collector current (pulse) 5 a i b base current (dc) 1 a i bp *base current (pulse) 2 a p c power dissipation(t c =25 c) 25 w t j junction temperature 150 c t stg storage temperature - 55 ~ 150 c symbol characteristics rating unit r jc thermal resistance junction to case 5.0 c/w r ja junction to ambient 83.3 KSC5302DI high voltage & high speed power switch application ? built-in free-wheeling diode makes efficient anti saturation operation suitable for half-bridge light ballast applications ? no need to interest an hfe value because of low variable storage-time spread even though corner spirit ? low base drive requirement 1. base 2. collector 3. emitter i-pak 1 c b e equivalent circuit
?2001 fairchild semiconductor corporation rev. a1, june 2001 KSC5302DI electrical characteristics t c =25 c unless otherwise noted *pulse test : pulse width=5, duty cycles 10% symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =1ma, i e =0 800 - - v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 400 - - v bv ebo emitter cut-off current i e =1ma, i c =0 12 - - v i cbo collector cut-off current v cb =500v, i e =0 - - 10 a i ebo emitter cut-off current v eb = 9v, i c = 0 - - 10 a h fe1 h fe2 dc current gain v ce =1v, i c =0.4a v ce =1v,i c =1a 20 10 - - - - v ce (sat) collector-emitter saturation voltage i c =0.4a, i b =0.04a i c =1a, i b =0.2a - - - - 0.4 0.5 v v v be (sat) base-emitter saturation voltage i c =0.4a, i b =0.04a i c =1a, i b =0.2a - - - - 0.9 1.0 v v c ob output capacitance vcb = 10v, f=1mhz - - 75 pf t on turn on time v cc =300v, i c =1a i b1 = 0.2a, i b2 =-0.5a r l = 300 ? - - 150 ns t stg storage time - - 2 s t f fall time - - 0.2 s t stg storage time v cc =15v,v z =300v i c = 0.8a,i b1 = 0.16a i b2 = -0.16a l c =200 h - - 2.35 s t f fall time - - 150 ns v f diode forward voltage i f = 0.4a i f = 1a - - - - 1.2 1.5 v v t rr * reverse recovery time (di/dt = 10a/ s) i f = 0.2a i f = 0.4a i f = 1a - - - 800 1.0 1.4 - - - ns s s
?2001 fairchild semiconductor corporation KSC5302DI rev. a1, june 2001 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. dc current gain figure 4. collector-emitter saturation voltage base-emitter saturation voltage figure 5. collector-emitter saturation voltage figure 6. base-emitter saturation voltage 012345678910 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i b = 100ma i b = 120ma i b = 80ma i b = 180ma i b = 160ma i b = 140ma i b = 200ma i b = 60ma i b = 40ma i b = 0 i c [a], collector current v ce [v], collector-emitter voltage 0.01 0.1 1 10 1 10 100 -25 o c 25 o c t a = 125 o c v ce = 5v h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 1 10 100 -20 o c 25 o c t a = 125 o c v ce = 1v h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [a], collector current 0.01 0.1 1 10 0.01 0.1 1 10 -20 o c 25 o c t a = 125 o c i c = 5i b v ce (sat)[v], saturation voltage i c [a], collector current 0.01 0.1 1 10 0.1 1 10 -20 o c 25 o c t a = 125 o c i c = 5i b v be [v], saturation voltage i c [a], collector current
?2001 fairchild semiconductor corporation KSC5302DI rev. a1, june 2001 typical characteristics (continued) figure 7. switching time figure 8. forward diode voltage figure 9. reverse recovery time figure 10. collector output capacitance figure 11. safe operating area figure 12. power derating 0.1 1 10 0.01 0.1 1 10 v cc = 300v i c = 5i b1 = -2.5i b2 t f t stg t stg , t f [ s], time i c [a], collector current 0.20.40.60.81.0 0.8 1.0 1.2 1.4 1.6 di/dt = 10a/ s trr[ s], reverse recovery time i f [a], forward current 0.01 0.1 1 10 0.1 1 10 v f [v], forward diode voltage i f [a], forward diode current 110100 1 10 100 1000 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage 10 100 1000 0.01 0.1 1 10 100 10 s dc 1 s 5ms 1ms i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 10 20 30 40 p c [w], power dissipation t c [ o c], case temperature
package demensions ?2001 fairchild semiconductor corporation rev. a1, june 2001 KSC5302DI dimensions in millimeters 6.60 0.20 0.76 0.10 max0.96 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] 0.60 0.20 0.80 0.10 1.80 0.20 9.30 0.30 16.10 0.30 6.10 0.20 0.70 0.20 5.34 0.20 0.50 0.10 0.50 0.10 2.30 0.20 (0.50) (0.50) (4.34) i-pak
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: ?2001 fairchild semiconductor corporation rev. h3 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. a cex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx? star*power is used under license
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