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| c-255 IRGPF30F fast speed igbt insulated gate bipolar transistor
c-256 IRGPF30F c-257 fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics c-258 fig. 5 - collector-to-emitter voltage vs. case temperature fig. 4 - maximum collector current vs. case temperature IRGPF30F c-259 IRGPF30F c-260 |
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