2008 .9. 17 1/3 semiconductor technical data kic7s66fu silicon monolithic cmos digital integrated circuit revision no : 3 bilateral switch the kic7s66fu is a high speed c 2 mos bilateral switch fabricated with silicon gate c 2 mos technology. it consists of a high speed switch capable of controlling either digital or analog signals while maintaining the c 2 mos low power dissipation. control input (c) is provided to control the switch. the switch turns on while the cl input is high, and the switch turns off while low. input is equipped with protection circuits against static discharge or transient excess voltage. features ? high speed : t pd =7ns(typ.) at v cc =5v. ? low power dissipation : i cc =1 a(max.) at ta=25 ? . ? high noise immunity : v nih =v nil =28% v cc (min.). ? low on resistance : r on =100 ? (typ.) at v cc =9v. ? low t.h.d : thd=0.05%(typ.) at v cc =5v. dim millimeters a b d g usv 2.00 0.20 1.25 0.1 2.1 0.1 0.2+0.10/-0.05 0-0.1 0.9 0.1 0.65 0.15+0.1/-0.05 b1 h c t g 1 3 2 b b1 d a h t 5 4 c c a1 1.3 0.1 a1 + _ + _ + _ + _ + _ maximum ratings (ta=25 ? ) marking type name lot no. sw pin connection (top view) gnd out/in in/out 3 2 1 cont. 4 5 v cc characteristic symbol rating unit dc supply voltage v cc -0.5 ?- 10 v control input voltage v in -0.5 ?- v cc +0.5 v swith i/o voltage v i/o -0.5 ?- v cc +0.5 v control diode current i ck ?? 20 ma output diode current i ok ?? 20 ma through i/o current i t ?? 12.5 ma dc v cc /ground current i cc ?? 25 ma power dissipation p d 200 mw storage temperature t stg -65 ?- 150 ? lead temperature (10s) t l 260 ?
2008 .9. 17 2/3 kic7s66fu revision no : 3 c i/o x 1 ii o/i logic diagram recommended operating conditions dc electrical characteristics truth table characteristic symbol rating unit supply voltage v cc 2 ?- 9 v control input voltage v in 0 ?- v cc v switch i/o voltage v i/o 0 ?- v cc v operating temperature t opr -40 ?- 85 ? input rise and fall time t r , t f 0 ?- 1000 (v cc =2.0v) 0 ?- 500 (v cc =4.5v) 0 ?- 400 (v cc =6.0v) 0 ?- 250 (v cc =9.0v) ns characteristic symbol test condition ta=25 ? ta=-40 ?- 85 ? unit v cc min. typ. max. min. max. high-level control input voltage v ihc - 2.0 4.5 9.0 1.5 3.15 6.3 - - - - - - 1.5 3.15 6.3 - - - v low-level control input voltage v ilc - 2.0 4.5 9.0 - - - - - - 0.5 1.35 2.7 - - - 0.5 1.35 2.7 v on resistance r on v in =v ihc v i/o =v cc to gnd v i/o z 1ma 4.5 9.0 - - 192 110 340 170 - - 400 200 ? v in =v ihc v i/o =v cc to gnd v i/o z 1ma 2.0 4.5 9.0 - - - 320 140 100 - 200 150 - - - - 260 190 input/output leakage current (switch off) i off v os =v cc or gnd v is =gnd or v cc v in =v ilc 9.0 - - ?? 100 - ?? 1000 switch input leakage current (sw on, output open) i iz v os =v cc or gnd v in =v ihc 9.0 - - ?? 100 - ?? 1000 na control input current i in v in =v cc or gnd 9.0 - - ?? 100 - ?? 1000 quiscent device current i cc v in =v cc or gnd 6.0 9.0 - - - 1.0 4.0 - - 10.0 40.0 a control switch function h on l off
2008 .9. 17 3/3 kic7s66fu revision no : 3 ac electrical characteristics (c l =50pf, input t r =t f =6ns) note 1 : c pd defined as the value of internal equivalent capacitance which is calculated from the operating current consumption without load average operating current can be obtained by the equation : i cc(opr) =c pd ? v cc ? f in + i cc characteristic symbol test condition ta=25 ? ta=-40 ?- 85 ? unit v cc min. typ. max. min. max. phase difference between input and output ?? i-o - 2.0 4.5 9.0 - - - 20 7 4 75 15 12 - - - 100 20 15 ns output enable time t pzl t pzh r l =1k ? 2.0 4.5 9.0 - - - 20 13 9 150 30 18 - - - 190 38 33 ns output disable time t plz t phz r l =1k ? 2.0 4.5 9.0 - - - 40 11 10 170 35 30 - - - 220 44 38 ns maximum control input frequency - r l =1k ? , c l =15pf v out =1/2 v cc 2.0 4.5 9.0 - - - 30 30 30 - - - - - - - - - mhz control input capacitance c in - - - 5 10 - 10 pf switch terminal capacitance c i/o - - - 6 - - - feedthrough capacitance c ios - - - 0.5 - - - power dissipation capacitance c pd (note 1) - - 15 - - - characteristic symbol test condition typ. unit v cc total harmonic distortion (t.h.d) - f in =1khz, v in =4v pp (v cc =4.5v) r l =10k ? , v in =8v pp (v cc =9.0v), c l =50pf 4.5 9.0 0.05 0.04 % maximum propagation frequency (switch on) f max adjust f in voltage to obtain 0dbm at v os increase f in frequency until db meter reads -3db. r l =50 ? , c l =10pf, f in =1mhz, sine wave 4.5 9.0 200 200 mhz feedthrough (switch on) - vin is ceintered at v cc /2 adjust input for 0dbm r l =600 ? , c l =50pf, f in =1mhz, sine wave 4.5 9.0 -60 -60 db crosstalk (control switch) - r l =600 ? , c l =50pf, in=1mhz, pulse (t r =t f =6ns) 4.5 9.0 60 100 mv note : these characteristics are determined by design of devices. analog switch characteristics (gnd=0v, ta=25 ? )
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