dated : 08/12/2003 ? semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) st 2sc5344 npn silicon epitaxial planar transistor audio power amplifier applications. the transistor is subdivided into two groups o and y according to its dc current gain. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 ) symbol value unit collector base voltage v cbo 35 v collector emitter voltage v ceo 30 v emitter base voltage v ebo 5 v collector current i c 800 ma collector dissipation p tot 625 mw junction temperature t j 150 o c storage temperature t s -55 to +150 o c
dated : 08/12/2003 ? semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) st 2sc5344 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at v ce =1v, i c =100ma o y h fe h fe 100 160 - - 200 320 - - collector-base breakdown voltage at i c =100 a, v cbo 35 - - v collector-emitter breakdown voltage at i c =10ma, v ceo 30 - - v emitter-base breakdown voltage at i e =10 a, v ebo 5 - - v collector cut-off current at v cb =35v, i cbo - - 0.1 a emitter cut-off current at v eb =5v, i ebo - - 0.1 a collector-emitter saturation voltage at i c =500ma, i b =50ma v ce(sat) - - 0.5 v transition frequency at v ce =5v, i c =10ma f t - 120 - mhz collector output capacitance at v cb =10v, f=1mhz, c ob - 13 - pf
dated : 08/12/2003 ? semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) st 2sc5344 t a =25c 6 t a =100c 5 100 1 10 1000 10 t a = -25c 100 t a =100c t a =25c 2000 fig.5 h fe - i c 0 v ce =1v 0 1 200 600 400 2 3 4 1000 i b =0ma 6 0.01 1 3 1 2 4 5 0.1 10 100 1000 t a = -25c 125 power disspation p c (mw) ambient temperature t a (c) 800 fig. 3 i c - v ce 1000 t a =25c 0 150 0 25 50 75 100 300 450 600 fig. 1 p c - t a 800 collector current ic (ma) ic/i b =10 fig. 4 v ce (sat) - i c 0.2 7 8 1 2 1 5 0 0 1.0 base-emitter voltage v be (v) 0.4 0.6 0.8 1.0 fig. 2 i c - v be v ce =1v 30 5 10 100 1000 t a = - 2 5 c t a = 1 0 0 c t a = 2 5 c 1.6 1.4 1.2 collector current i c (ma) collector- emitter voltage v ce (v) collector- emitter saturation voltage v ce (sat) (v) collector current i c (ma) dc current gain h fe collector current i c (ma)
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