*silicon epitaxial planner diode *low reverse current and low forward voltage *low current rectification and high speed switching *case : mini-melf glass case (sod-80) *polarity: color band denotescathode band *weight : approx 0.05 gram *high reliability *used in recorder, radio, tv, telephone as detectors 30-50 mamperes 40-45 volts LL60/LL60p schottky barrier diode s maximum ratings ( t a =25 c u nless other wise not ed) characteristic p ep etitiv e p eak r e v erse v oltage symbol v rrm i fsm LL60 LL60p unit v ma t j t st g -65 t o +125 electrical characteristics ( t a =25 c u nless other wise not ed) characteristic symbol min tpy max unit v r e v erse r ec o v er y t ime i r i f =1 ma i r r =1 ma, i f =30 ma i f =i =1ma , i f =200 ma v f i f a m c f or w ar d v oltage cj pf f or w ar d c on tinuous c ur r en t , t =25 c n on-r ep etitiv e p eak f or w ar d sur ge c ur r en t op er a ting and s tr or age t emp er a tur e r ange , 40 150 30 50 500 45 LL60 LL60p LL60 LL60p LL60 LL60p LL60 LL60p j unc tion c apacitanc e rv erse c ur r en t v r =15v r c =100 v r =1v , f=1mhz v r =10v , f=1mhz t r r 0.32 0.24 0.65 0.65 0.1 0.5 2.0 r 6.0 1.0 0.5 1.0 0.5 0.5 1.0 1.0 ua ns - - - - - - - - - - - - @t=1s a 3. 4 +0 . 3 -0 .1 0. 4 0. 1 |? 1 .5 0 .1 c a t h ode i n d i f i c a t i on mini-melf dimension in millimeters features m echani cal d ata http://www.luguang.cn mail:lge@luguang.cn
fig.1 fowrad current vs. forward voltage fig.2 reverse current vs. continuous reverse votlage fig.3 junction capacitance vs. continuous reverse applied voltage vf(v) if(ma) vr(v) ir(ua) vf(v) c (pf) 50 0 100 150 200 250 0 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.2 0.4 0.6 0.8 1.0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 2 4 6 8 10 12 LL60p LL60p LL60 LL60p LL60 LL60 j LL60/LL60p schottky barrier diodes http://www.luguang.cn mail:lge@luguang.cn
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