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  l l 6 0 , l l 6 0 p small signal schottky diodes fea tures mechanical da t a absolute ra tings(limiting v alues) electrical characteristics repetitive peak reverse v oltage forward v oltage reverse current i f =1ma ll60 0.35 0.26 0.70 0.70 1.0 5.0 0.5 0.5 1.0 1.0 10.0 1 5.0 4.0 1 0 .0 6 0 400 ll60 ll60 ll60 ll60p ll60p ll60p ll60p i f =30ma i f =200ma v r =15v v r =1v f=1mhz v r =10v f=1mhz v i =3v f=30mhz c l =10pf r l =3.8k w i f =i r =1ma irr=1ma rc=100 w reverse recovery time junction capacitance junction ambient thermal resistance detection ef ficiency(see diagram 4) v rrm ma ma v olts forward continuous current t a =25 c peak forward surge current(t=1s) v olts ma pf ns c/w % if i fsm v f i r c j t rr h 400 150 50 30 40 40 m e t a l - o n - s i l i c o n j u n c t i o n , m a j o r i t y c a r r i e r c o n d u c t i o n h i g h c u r r e n t c a p a b i l i t y , l o w f o r w a r d v o l t a g e d r o p e x t r e m e l y l o w r e v e r s e c u r r e n t i u l t r a s p e e d s w i t c h i n g c h a r a c t e r i s t i c s s m a l l t e m p e r a t u r e c o e f f i c i e n t o f f o r w a r d c h a r a c t e r i s t i c s s a t i s f a c t o r y a v e d e t e c t i o n e f f i c i e n c y r w f o r u s e i n r e c o r d e r , t v , r a d i o a n d t e l e p h o n e a s d e t e c t o r s s u p e r h i g h s p e e d s w i t c h i n g c i r i t s , s m a l l c u r r e n t r e c t i f i e r parameters symblos units ll60p ll60 v alue parameters symblos units max. min. v alue t est conditions t yp. high temperature soldering guaranteed : 260 !/ 10 seconds at terminals r q ja minimelf dimensions in inches and (millimeters) 0.142(3.6) 0.134(3.4) 0.019(0.48) 0.011(0.28) 0.063(1.6) 0.055(1.4) case: minimelf glass case(sod-80 ) polarity: color band denotes cathode end w eight: approx. 0.05 gram t stg /t j storage and junction t emperature range maximum lead t emperature for soldering during 10s at 4mm from case -55 to+125 c c t l 260 xinghe electronics e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017 1
2 fig.1-for w ard current versus for w ard vol t age (typical v alues) fig.2-reverse current versus continuous reverse vol t age fig.4-detection efficiency measurement circuit fig.3-junction cap acit ance versus continuous reverse applied vol t age d.u.t. input:3v rms output c l r l 10pf 3.8k w ir( u a) c j (pf) if(ma) vr(v) vr(v) vf(v) 0 0 0 10 0.20 0.5 20 0.40 1.0 30 0.60 1.5 40 50 0.80 2.0 60 1.00 2.5 70 1.20 3.0 80 1.40 3.5 4.0 90 100 0.2 5 0.4 10 0.8 20 0.6 15 1.0 25 30 ~ ~ ~ 1 2 4 3 5 6 l l 6 0 , l l 6 0 p small signal schottky diodes xinghe electronics e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017
3 fig.1-for w ard current versus for w ard vol t age (typical v alues) fig.2-reverse current versus continuous reverse vol t age i r ( u a) c(pf) if(ma) vr(v) vr(v) vf(v) 0 0 0 50 0.10 6 100 0.20 8 150 0.30 10 200 250 0.40 12 300 0.50 14 350 0.60 16 400 0.70 18 20 450 500 0.2 5 1 0.4 10 2 0.8 20 4 0.6 15 3 1.0 25 5 30 6 fig.3-junction cap acit ance versus continuous reverse applied vol t age fig.4-detection efficiency measurement circuit d.u.t. input:3v rms output c l r l 10pf 3.8k w ~ ~ ~ l l 6 0 , l l 6 0 p small signal schottky diodes xinghe electronics e?o?? gaomi xinghe electronicsco.,ltd. www.sddzg.com tel:0536-2210359 qq:464768017


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