cph5902 no.6962-1/8 60612 tkim/62005ac msim tb-00001588/22004 tsim ta-101143/52501 tsim ta-3247 sanyo semiconductors data sheet http:// semicon.sanyo.com/en/network ordering number : en6962c features ? composite type with j-fet and npn transistors contained in the cph5 package, improving the mounting ef ciency greatly ? the cph5902 contains a 2sk2394-equivalent chip and a 2sc4639-equivalent chip in one package ? drain and emitter are shared speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit [fet] drain-to-source voltage v dsx 15 v gate-to-drain voltage v gds --15 v gate current i g 10 ma drain current i d 50 ma allowable power dissipation p d mounted on a ceramic board (600mm 2 0.8mm) 350 mw [tr] collector-to-base voltage v cbo 55 v collector-to-emitter voltage v ceo 50 v emitter-to-base voltage v ebo 6v collector current i c 150 ma collector current (pulse) i cp 300 ma base current i b 30 ma collector dissipation p c mounted on a ceramic board (600mm 2 0.8mm) 350 mw [tr] total power dissipation p t mounted on a ceramic board (600mm 2 0.8mm) 500 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7017a-007 cph5902 product & package information ? package : cph5 ? jeita, jedec : sc-74a, sot-25 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 1 : collector 2 : gate 3 : source 4 : emitter/drain 5 : base sanyo : cph5 2 1 4 53 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 rb lot no. rank tl tr : npn epitaxial planar silicon transistor fet : n-channel silicon junction fet high-frequency ampli er. am ampli er. low-frequency ampli er applications CPH5902G-TL-E cph5902h-tl-e 5 3 12 4
cph5902 no.6962-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [fet] gate-to-drain breakdown voltage v (br)gds i g =--10 a, v gs =0v --15 v gate cutoff current i gss v gs =--10v, v ds =0v --1.0 na cutoff voltage v gs (off) v ds =5v, i d =100 a --0.4 --0.7 --1.5 v drain current i dss v ds =5v, v gs =0v 10.0* 32.0* ma forward transfer admittance | yfs | v ds =5v, v gs =0v, f=1khz 24 38 ms input capacitance ciss v ds =5v, v gs =0v, f=1khz 10.0 pf reverse transfer capacitance crss v ds =5v, v gs =0v, f=1khzz 2.9 pf noise figure nf v ds =5v, rg=1k , i d =1ma, f=1khz 1.0 db [tr] collector cutoff current i cbo v cb =35v, i e =0a 0.1 a emitter cutoff current i ebo v eb =4v, i c =0a 0.1 a dc current gain h fe v ce =6v, i c =1ma 135 400 gain-bandwidth product f t v ce =6v, i c =10ma 200 mhz output capacitance cob v cb =6v, f=1mhz 1.7 pf collector-to-emitter saturation voltage v ce (sat) i c =50ma, i b =5ma 0.08 0.4 mv base-to-emitter saturation voltage v be (sat) i c =50ma, i b =5ma 0.8 1.0 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 55 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 50 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 6 v turn-on time t on see speci ed test circuit. 0.15 ns storage time t stg 0.75 ns fall time t f 0.20 ns * : the cph5902 is classi ed by i dss as follows : (unit : ma) rank g h i dss 10.0 to 20.0 16.0 to 32.0 the speci cations shown above are for each individual fet or transistor. switching time test circuit ordering information device package shipping memo CPH5902G-TL-E cph5 3,000pcs./reel pb free cph5902h-tl-e cph5 3,000pcs./reel v r 1k v cc =20v v be = --5v + + 50 input outpu t r l 2k 220 f 470 f pc=20 s i b1 d.c. 1% i b2 10i b1 = --10i b2 =i c =10ma
cph5902 no.6962-3/8 [fet] [fet] 0 0 i d -- v ds 20 16 12 8 4 0.4 0.8 1.2 1.6 2.0 itr10364 i d -- v ds --0.1v v gs =0v --0.2v --0.3v --0.4v --0.5v --0.6v - -0.7v 0 0 20 16 12 8 4 24 6810 --0.1v v gs =0v --0.2v --0.3v --0.4v --0.5v --0.6v --0.7v itr10365 drain-to-source voltage, v ds -- v drain current, i d -- ma drain-to-source voltage, v ds -- v drain current, i d -- ma [fet] [fet] [fet] [fet] i d -- v gs it03287 i d -- v gs itr10367 | y fs | -- i d it03288 | y fs | -- i dss it03289 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 22 20 18 16 14 12 10 8 6 4 2 i dss =20ma 15ma 10ma --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 4 2 6 8 12 10 14 16 75 c v ds =5v i dss =15ma 25 c ta= --25 c 10 5 3 7 2 3 5 7 3 1.0 10 7 5235723 5 2 v ds =5v f=1khz i dss =15ma 30ma v ds =5v v gs =0v f=1khz 7 10 23 5 10 2 3 5 7 100 v ds =5v gate-to-source voltage, v gs -- v drain current, i d -- ma gate-to-source voltage, v gs -- v drain current, i d -- ma drain current, i d -- ma forward transfer admittance, | y fs | -- ms drain current, i dss -- ma forward transfer admittance, | y fs | -- ms [fet] [fet] it03290 ciss -- v ds itr10371 v gs (off) -- i dss 7 10 23 5 --0.1 2 --1.0 7 5 3 2 v ds =5v i d =100 a 7235723 1.0 3 1.0 10 10 2 3 5 7 2 v gs =0v f=1mhz drain current, i dss -- ma cutoff voltage, v gs(off) -- v drain-to-source voltage, v ds -- v input capacitance, ciss -- pf
cph5902 no.6962-4/8 [fet] [fet] crss -- v ds itr10372 nf -- f itr10373 73 5 10 1.0 2 10 2 357 7 5 3 2 1.0 7 v gs =0v f=1mhz 10 8 6 4 2 0.01 2 0.1 1.0 10 100 0 357 2357 2357 2357 v ds =5v i d =1ma rg=1k drain-to-source voltage, v ds -- v reverse transfer capacitance, crss -- pf frequency, f -- khz noise figure, nf -- db 50 30 20 40 10 0 0 0.4 1.0 0.8 0.6 0.2 i c -- v ce [tr] [tr] 50 a 100 a 150 a 200 a 250 a 300 a 350 a 400 a 45 0 a 500 a itr10376 020 50 40 10 30 i c -- v ce itr10377 12 10 6 4 8 2 0 i b =0 a 10 a 15 a 20 a 25 a 30 a 35 a 40 a 45 a 50 a 5 a i b =0 a [fet] [fet] nf -- rg itr10374 p d -- ta 10 8 6 4 2 0.1 2 1.0 10 100 1000 0 357235723572357 v ds =5v i d =1ma f=1khz signal source resistance, rg -- k noise figure, nf -- db ambient temperature, ta -- c allowable power dissipation, p d -- mw collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector-to-emitter voltage, v ce -- v collector current, i c -- ma it09864 400 300 200 50 100 350 250 150 0 0 20 40 60 80 100 160 120 140 mounted on a ceramic board (600mm 2 ? 0.8mm) [tr] [tr] ta=75 c --25 c 100 3 2 7 5 1000 2 7 5 3 0.1 3 25 1.0 3 23 25 100 3 2 5 10 h fe -- i c 25 c v ce =6v itr10379 ta=75 c -- 2 5 c 160 120 140 20 80 100 40 60 0 v ce =6v 25 c 0 0.2 0.4 0.8 0.6 1.0 1.4 1.2 i c -- v be itr10378 base-to-emitter voltage, v be -- v collector current, i c -- ma collector current, i c -- ma dc current gain, h fe
cph5902 no.6962-5/8 [tr] [tr] 3 100 2 5 7 3 2 5 7 1.0 10 52 7 3 2 100 57 3 2 3 1.0 10 2 3 2 5 5 7 1.0 10 57 57 3 2 f t -- i c itr10380 c ib -- v eb itr10381 v ce =6v f=1mhz collector current, i c -- ma gain-bandwidth product, f t -- mhz emitter-to-base voltage, v eb -- v input capacitance, c ib -- pf p c -- ta [tr] [tr] 1.0 7 23 5 7 22 35 10 100 5 3 1.0 10 7 5 3 2 7 v be (sat) -- i c i c / i b =10 itr10384 75 c ta= --25 c 25 c [tr] [tr] 3 10 2 3 2 5 5 7 1.0 5 7 1.0 10 57 57 3 2 100 57 3 2 cob -- v cb itr10382 f=1mhz 1.0 7 23 5 7 22 35 10 100 5 3 2 0.1 1.0 7 5 3 2 3 2 7 v ce (sat) -- i c i c / i b =10 itr10383 ta=75 c --25 c collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v ambient temperature, ta -- c collector dissipation, p c -- mw it09865 25 c 400 300 200 50 100 350 250 150 0 0 20 40 60 80 100 160 120 140 mounted on a ceramic board (600mm 2 ? 0.8mm)
cph5902 no.6962-6/8 embossed taping speci cation CPH5902G-TL-E, cph5902h-tl-e
cph5902 no.6962-7/8 outline drawing land pattern example CPH5902G-TL-E, cph5902h-tl-e mass (g) unit 0.02 * for reference mm unit: mm 0.6 2.4 1.4 0.95 0.95
cph5902 ps no.6962-8/8 this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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