S9226 features l pixel pitch: 7.8 ? pixel height: 125 ? l number of pixels: 1024 ch l single 3.3 v power supply operation available l high sensitivity, low dark current, low noise l on-chip charge amplifier with excellent input/output characteristics l built-in timing generator allows operation with only start and clock pulse inputs l video data rate: 200 khz max. l spectral response range: 400 to 1000 nm l 8-pin dip, 16-pin surface mount type also available applications l analytical equipment l position detection l image reading image sensor cmos linear image sensor built-in timing generator and signal processing circuit; single 3.3 v supply operation S9226 is a small cmos linear image sensor designed for image input applications. the signal processing circuit has a charge amp lifier with excellent input/output characteristics. 1 absolute maximum ratings parameter symbol value unit supply voltage vdd -0.3 to +6 v gain selection terminal voltage vg -0.3 to +6 v clock pulse voltage v (clk) -0.3 to +6 v start pulse voltage v (st) -0.3 to +6 v operating temperature * 1 topr -5 to +60 c storage temperature ts t g -10 to +70 c *1: no condensation shape specifications parameter value unit number of pixels 1024 - pixel pitch 7.8 m pixel height 125 m active area length 7.9872 mm window material tempax -
cmos linear image sensor S9226 2 recommended terminal voltage parameter symbol min. typ. max. unit supply voltage vdd 3.3 5 5.25 v high gain - 0 - v gain selection terminal voltage low gain vg vdd-0.25 vdd vdd+0.25 v high vdd-0.25 vdd vdd+0.25 v clock pulse voltage low v (clk) -0-v high vdd-0.25 vdd vdd+0.25 v start pulse voltage low v (st) - 0 - v electrical characteristics [ta=25 c, vdd=5 v, v (clk)=v (st)=5 v] parameter symbol min. typ. max. unit clock pulse frequency f (clk) 10 - 800 khz video data rate vr - f (clk)/4 - khz power consumption p - 25 30 mw low gain - 1.6 - conversion efficiency high gain ce - 3.2 - v/e - output impedance * 2 zo - 185 - ? electrical and optical characteristics [ta=25 c, vdd=5 v, v (clk)=v (st)=5 v] parameter symbol min. typ. max. unit spectral response range 400 to 1000 nm peak sensitivity wavelength p - 700 - nm dark current i d -330fa high gain - 0.6 6 dark output voltage * 3 low gain vd - 0.3 3 mv saturation output voltage * 4 vsat 2 3 - v high gain - 0.6 2 readout noise low gain nr - 0.3 1 mv rms offset output voltage vo - 0.3 0.6 v photo response non-uniformity * 5 * 6 prnu -5 - +5 % *2: an increased current consumption at the video terminal rises the sensor chip temperature causing an increased dark current. connect a buffer amplifier for impedance conversion to the video terminal so that the current flowing to the video terminal is minimized. use a jfet or cmos input, high-impedance input op amp as the buffer amplifier. *3: storage time ts=100 ms *4: voltage difference with respect to vo, ts=10 ms *5: uniformity is defined under the condition that the device is uniformly illuminated by light which is 50 % of the saturation exposure level and using 1022 pixels excluding both ends pixels as follows: prnu= ? x/x 100 (%) where x is the average output of all pixels and ? x is the difference between x and maximum or minimum output and x. *6: measured with a tungsten lamp of 2856 k spectral response (typical example) kmpdb0229ec wavelength (nm) relative sensitivity (%) 80 200 600 1000 300 400 800 700 500 900 1100 0 60 100 40 20 (typ. ta=25 ?c)
cmos linear image sensor S9226 timing chart kmpdc0164ea 3 parameter symbol min. typ. max. unit start pulse high time thw (st) t1 4102 - - s start pulse rise and fall time tr (st), tf (st) 0 20 30 ns clock pulse width tpw (clk), t1 1.25 - 100 s clock pulse rise and fall time tr (clk), tf (clk) 0 20 30 ns video delay time tvd 10 20 30 ns note: the clk pulse should be set from high to low just once when the st pulse is low. the internal shift register starts operating at this timing. the storage time is determined by the start pulse intervals. however, since the charge storage of each pixel is carried out between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge storage differs depending on each pixel. in addition, the next start pulse cannot be input until signal readout from all pixels is completed. clk st video trig eos clk st video t1 tr (clk) tf (clk) tpw (clk) tr (st) tf (st) tvd thw (st), integration time block diagram kmpdc0165eb clk timing generator 12345 1023 1024 photodiode array st trig gnd vdd eos vg video 243 1875 6 shift register address switch charge amp clamp circuit
cmos linear image sensor S9226 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 7 hamamatsu photonics k.k. cat. no. kmpd1073e05 feb. 2007 dn 4 pin connections pin no. symbol name of pin i/o 1 gnd ground i 2 clk clock pulse i 3 trig trigger pulse o 4 st start pulse i 5 vg gain selection voltage i 6 video video output o 7 eos end of scan o 8 vdd supply voltage i precautions during use (1) electrostatic countermeasures this device has a built-in protection circuit against static electrical charges. however, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static dis- charges. also protect this device from surge voltages which might be caused by peripheral equipment. (2) incident window if dust or dirt gets on the light incident window, it will show up as black blemishes on the image. when cleaning, avoid rubbin g the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. then blow compressed air onto the window surface so that no spot or stain remains. (3) soldering to prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. soldering should be performed within 5 seconds at a soldering temperature below 260 c. (4) operating and storage environments always observe the rated temperature range when handling the device. operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. kmpda0172ea 0.5 7.62 2.54 1.5 0.15 0.5 5.0 0.5 active area 7.9872 0.125 chip 1 ch 7.87 0.25 pin no. 1 12.0 0.3 14 85 7.62 1.05 0.15 0.25 dimensional outline (unit: mm) kmpdc0265ea gnd clk tr i g st 1 2 3 4 8 7 6 5 vdd eos video vg
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