vishay byt54. document number 86031 rev. 1.6, 12-aug-04 vishay semiconductors www.vishay.com 1 949539 fast avalanche sinterglass diode features ? glass passivated junction hermetically sealed package low reverse current soft recovery characteristics applications very fast rectification and switching diodes mechanical data case: sod-57 sintered glass case terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation package byt54a v r = 50 v; i fav = 1.25 a sod-57 byt54b v r = 100 v; i fav = 1.25 a sod-57 byt54d v r = 200 v; i fav = 1.25 a sod-57 BYT54G v r = 400 v; i fav = 1.25 a sod-57 byt54j v r = 600 v; i fav = 1.25 a sod-57 byt54k v r = 800 v; i fav = 1.25 a sod-57 byt54m v r = 1000 v; i fav = 1.25 a sod-57 parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics byt54a v r = v rrm 50 v byt54b v r = v rrm 100 v byt54d v r = v rrm 200 v BYT54G v r = v rrm 400 v byt54j v r = v rrm 600 v byt54k v r = v rrm 800 v byt54m v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sinewave i fsm 30 a
www.vishay.com 2 document number 86031 rev. 1.6, 12-aug-04 vishay byt54. vishay semiconductors maximum thermal resistance t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25 c unless otherwise specified) average forward current on pc board i fav 0.75 a l = 10 mm i fav 1.25 a junction and storage temperature range byt54a t j = t stg - 55 to + 175 c byt54b t j = t stg - 55 to + 175 c byt54d t j = t stg - 55 to + 175 c BYT54G t j = t stg - 55 to + 175 c byt54j t j = t stg - 55 to + 175 c byt54k t j = t stg - 55 to + 175 c byt54m t j = t stg - 55 to + 165 c non repetitive reverse avalanche energy i (br)r = 0.4 a byt54j e r 10 mj byt54k e r 10 mj byt54m e r 10 mj parameter test condition symbol value unit junction ambient l = 10 mm, t l = constant r thja 45 k/w on pc board with spacing 25 mm r thja 100 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 1 a v f 1.5 v reverse current v r = v rrm i r 5 a v r = v rrm , t j = 150 c i r 150 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr 100 ns parameter test condition part symbol value unit figure 1. max. thermal resistance vs. lead length 0 0 20 40 60 80 120 r - therm. resist. junction/ambient (k/w) thja l - lead length ( mm ) 94 9552 51015 25 30 20 100 ll t l = constant figure 2. forward current vs. forward voltage 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 16338 t j =25 c t j =175 c i - forward current ( a) 0.001 0.01 0.1 1 10 v f - forward voltag e(v) f
vishay byt54. document number 86031 rev. 1.6, 12-aug-04 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) figure 3. max. average forward current vs. ambient temperature figure 4. reverse current vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 120 140 160 180 t amb ? ambient temperature(c ) 16339 i - average forward current ( a ) fav r thja = 45 k/w l=10mm r thja = 100 k/w pcb:d=25mm v r =v rrm half sinewave 1 10 100 1000 25 50 75 100 125 150 175 t j ? junction temperature (c ) 16340 v r =v rrm i ? reverse current ( a ) r figure 5. max. reverse power dissipation vs. junction temperature figure 6. diode capacitance vs. reverse voltage 0 50 100 150 200 250 300 350 400 450 25 50 75 100 125 150 175 t j ? junction temperature ( c ) 16341 v r =v rrm p ? reverse power dissipation ( mw ) r p r ?limit @100 % v r p r ?limit @80%v r 0 5 10 15 20 25 30 35 0.1 1 10 100 v r ? reverse v oltag e(v) 16342 c ? diode capacitance ( pf ) d f= 1 mhz cathode identification 0.82 (0.032) max. sintered glass case sod-57 94 9538 26(1.014) min. 26(1.014) min. iso method e 3.6 (0.140)max. 4.0 (0.156) max.
www.vishay.com 4 document number 86031 rev. 1.6, 12-aug-04 vishay byt54. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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