1/9 may 2002 STB70NF03L n-channel 30v - 0.008 w - 70a d 2 pak low gate charge stripfet? power mosfet (1) i sd 70a, di/dt 290a/s, v dd v (br)dss , t j t jmax. n typical r ds (on) = 0.008 w n typical qg= 35 nc @10v n optimal r ds (on) x qg trade-off n conduction losses reduced n switching losses reduced n add suffix t4 for ordering in tape & reel description this application specific power mosfet is the third genaration of stmicroelectronics unique single feature size strip-based process. the resulting transistor shows the best trade-off between on-re- sistance and gate charge. when used as high and low side in buck regulators, it gives the best perfor- mance in terms of both conduction and switching losses. this is extremely important for mother- boards where fast switching and high efficiency are of paramount importance. applications n specifically designed and optimised for high efficiency cpu core dc/dc converters n automotive absolute maximum ratings ( l ) pulse width limited by safe operating area type v dss r ds(on) i d STB70NF03L 30 v < 0.01 w 70 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k w ) 30 v v gs gate- source voltage 18 v i d drain current (continuos) at t c = 25c 70 a i d drain current (continuos) at t c = 100c 50 a i dm ( l ) drain current (pulsed) 280 a p tot total dissipation at t c = 25c 100 w derating factor 0.67 w/c dv/dt (1) peak diode recovery voltage slope 4 v/ns t stg storage temperature C60 to 175 c t j max. operating junction temperature 175 c d 2 pak 1 3 internal schematic diagram
STB70NF03L 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 1.5 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 35 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 450 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 18v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1v r ds(on) static drain-source on resistance v gs = 10v, i d = 35 a 0.008 0.01 w v gs = 5v, i d = 18 a 0.015 0.018 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds = 25v , i d = 35 a 40 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 1470 pf c oss output capacitance 490 pf c rss reverse transfer capacitance 110 pf
3/9 STB70NF03L electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 15v, i d = 35a r g = 4.7 w v gs = 4.5v (see test circuit, figure 3) 20 ns t r rise time 350 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 24v, i d = 70a, v gs = 10v 35 5 10 45 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 15v, i d = 35a, r g =4.7 w, v gs = 4.5v (see test circuit, figure 3) 35 65 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 70 a i sdm (2) source-drain current (pulsed) 280 a v sd (1) forward on voltage i sd = 70a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 70a, di/dt = 100a/s, v dd = 20v, t j = 150c (see test circuit, figure 5) 75 110 2.9 ns nc a safe operating area thermal impedence
STB70NF03L 4/9 capacitance variations transconductance static drain-source on resistance transfer characteristics output characteristics gate charge vs gate-source voltage
5/9 STB70NF03L normalized on resistance vs temperature normalized gate thereshold voltage vs temp. source-drain diode forward characteristics
STB70NF03L 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 STB70NF03L 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o4o d 2 pak mechanical data 3
STB70NF03L 8/9 tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
9/9 STB70NF03L information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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