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mrf7p20040hr3 MRF7P20040HSR3 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for cdma base station applications with frequencies from 1800 to 2200 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical doherty single--carrier w--cdma performance: v dd =32volts, i dqa = 150 ma, v gsb =1.5vdc,p out = 10 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 2025 mhz 18.2 42.6 7.3 --34.8 ? capable of handling 5:1 vswr, @ 32 vdc, 2017.5 mhz, 50 watts cw (1) output power (3 db input overdrive from rated p out ) ? typical p out @ 3 db compression point ? 50 watts cw (1) features ? production tested in a symmetrical doherty configuration ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? rohs compliant ? in tape and reel. r3 suffix = 250 units, 56 mm tape width, 13 inch reel. for r5 tape and reel option, see p. 15. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (2,3) t j 225 c cw operation @ t c =25 c derate above 25 c cw 42.4 0.17 w w/ c table 2. thermal characteristics characteristic symbol value (3,4) unit thermal resistance, junction to case case temperature 78 c, 10 w cw, 32 vdc, i dqa = 150 ma, v gsb = 1.5 vdc, 2017.5 mhz case temperature 82 c, 40 w cw (1) ,32vdc,i dqa = 150 ma, v gsb = 1.5 vdc, 2017.5 mhz r jc 2.11 1.50 c/w 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 2. continuous use at maximum temperature will affect mttf. 3. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 4. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/- application notes -- an1955. document number: mrf7p20040h rev. 2, 12/2010 freescale semiconductor technical data 2010--2025 mhz, 10 w avg., 32 v single w--cdma lateral n--channel rf power mosfets mrf7p20040hr3 MRF7P20040HSR3 case 465h--02, style 1 ni--780s--4 MRF7P20040HSR3 (top view) rf outa /v dsa 31 figure 1. pin connections 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb case 465m--01, style 1 n i -- 7 8 0 -- 4 mrf7p20040hr3 ? freescale semiconductor, inc., 2009--2010. a ll rights reserved.
2 rf device data freescale semiconductor mrf7p20040hr3 MRF7P20040HSR3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1a (minimum) machine model (per eia/jesd22--a115) b (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds =10vdc,i d = 33.5 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v dd =32vdc,i da = 150 madc, measured in functional test) v gs(q) 2 2.7 3.5 vdc drain--source on--voltage (v gs =10vdc,i d = 0.325 adc) v ds(on) 0.1 0.24 0.3 vdc functional tests (2,3) (in freescale doherty test fixture, 50 ohm system) v dd =32vdc,i dqa = 150 ma, v gsb =1.5vdc,p out =10wavg., f = 2025 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 16 18.2 21 db drain efficiency d 39 42.6 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.9 7.3 ? db adjacent channel power ratio acpr ? --34.8 -- 3 0 dbc input return loss irl ? --17.8 -- 1 0 db typical performance (3) (in freescale doherty test fixture, 50 ohm system) v dd =32vdc,i dqa = 150 ma, v gsb =1.5vdc, 2010--2025 mhz bandwidth p out @ 1 db compression point, cw p1db ? 35 ? w p out @ 3 db compression point, cw (4) p3db ? 50 ? w imd symmetry @ 15 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 8 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 70 ? mhz gain flatness in 15 mhz bandwidth @ p out =10wavg. g f ? 0.04 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.013 ? db/ c output power variation over temperature (--30 cto+85 c) (4) ? p1db ? 0.006 ? db/ c 1. each side of device measured separately. 2. part internally matched both on input and output. 3. measurement made with device in a sy mmetrical doherty configuration. 4. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
mrf7p20040hr3 MRF7P20040HSR3 3 rf device data freescale semiconductor figure 2. mrf7p20040hr3(hsr3) t est circuit component layout mrf7p20040h/hs rev. 1 cut out area v gga c13 r2 c5 c3 c1 r1 c4 c2 r3 c6 c14 v ggb v dsb c12 c16 c18 c19 c10 c8 c9 c7 c11 c15 c17 v dsa c p table 5. mrf7p20040hr3(hsr3) test circ uit component designations and values part description part number manufacturer c1, c2, c9, c10 12 pf chip capacitors atc600f120ft250xt atc c3, c4 2.4 pf chip capacitors atc600f2r4at250xt atc c5, c6 27 pf chip capacitors atc600f270ft250xt atc c7, c8 1.1 pf chip capacitors atc600f1r1at250xt atc c11, c12 12 pf chip capacitors atc100b120ft1500xt atc c13, c14 2.2 f, 50 v chip capacitors c3225x7r1h225kt tdk c15, c16 4.7 f, 50 v chip capacitors grm43er61h475ma88l murata c17, c18 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c19 0.8 pf chip capacitor atc600f0r8at250xt atc r1 100 ? , 1/4 w chip resistor crcw12061000fkea vishay r2, r3 12 ? , 1/4 w chip resistors crcw120612r0fkea vishay pcb 0.020 , r =3.5 ro4350b rogers
4 rf device data freescale semiconductor mrf7p20040hr3 MRF7P20040HSR3 4 2 2 4 2 2 single--ended quadrature combined doherty push--pull 4 4 4 4 figure 3. possible circuit topologies
mrf7p20040hr3 MRF7P20040HSR3 5 rf device data freescale semiconductor typical characteristics irl, input return loss (db) 1880 irl g ps acpr f, frequency (mhz) figure 4. output peak--to--average ratio compression (parc) broadband performance @ p out = 10 watts avg. -- 2 2 -- 1 4 -- 1 6 -- 1 8 -- 2 0 18.5 18 -- 3 8 46 44 42 40 -- 2 8 -- 3 0 -- 3 2 -- 3 4 d , drain efficiency (%) d g ps , power gain (db) 17 16 15 14 1900 1920 1940 1960 1980 2000 2020 2040 38 -- 3 6 -- 2 4 parc parc (db) -- 2 . 6 -- 1 . 8 -- 2 -- 2 . 2 -- 2 . 4 -- 2 . 8 acpr (dbc) v dd =32vdc,p out =10w(avg.) i dqa = 150 ma, v gsb =1.5vdc figure 5. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u v dd =32vdc,p out = 15 w (pep), i dqa = 150 ma v gsb = 1.5 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 2017.5 mhz figure 6. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 6 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 3 912 24 48 44 40 36 32 28 d , drain efficiency (%) --1 db = 5.48 w --2 db = 7.64 w --3 db = 10.07 w 15 v dd =32vdc,i dqa = 150 ma d acpr parc acpr (dbc) -- 3 8 -- 2 6 -- 2 8 -- 3 0 -- 3 4 -- 3 2 -- 3 6 18.5 g ps , power gain (db) 18 17.5 17 16.5 16 15.5 g ps 17.5 16.5 15.5 14.5 13.5 single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probab ility on ccdf v gsb = 1.5 vdc, f = 2017.5 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf
6 rf device data freescale semiconductor mrf7p20040hr3 MRF7P20040HSR3 typical characteristics 1 g ps acpr p out , output power (watts) avg. figure 7. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 14 19 10 60 50 40 30 20 d , drain efficiency (%) g ps , power gain (db) 18.5 18 10 50 acpr (dbc) 16 15 14.5 0 -- 3 0 -- 4 0 -- 5 0 figure 8. broadband frequency response -- 4 20 1450 f, frequency (mhz) v dd =32vdc p in =0dbm i dqa = 150 ma v gsb =1.5vdc 16 12 8 1575 gain (db) gain 1700 1825 1950 2075 2200 2325 2450 irl -- 4 0 -- 4 -- 1 0 -- 1 6 -- 2 2 -- 2 8 irl (db) 4 -- 3 4 2025 mhz 2017.5 mhz f = 2010 mhz d 2010 mhz 2017.5 mhz 2025 mhz 2025 mhz 2017.5 mhz 2010 mhz v dd =32vdc,i dqa = 150 ma v gsb = 1.5 vdc, single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probabilit y on ccdf 17.5 17 16.5 15.5 55 45 35 25 15 -- 5 -- 1 5 -- 2 5 -- 3 5 -- 4 5 0
mrf7p20040hr3 MRF7P20040HSR3 7 rf device data freescale semiconductor w--cdma test signal 10 0.0001 100 0 peak--to--average (db) figure 9. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 2468 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 9.9 db @ 0.01% probabilit y on ccdf input signal 12 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 10. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0
8 rf device data freescale semiconductor mrf7p20040hr3 MRF7P20040HSR3 v dd =32vdc,i dqa = 150 ma, v gsb =1.5vdc,p out =10wavg. f mhz z source ? z load ? 1995 6.80 -- j13.11 14.67 + j4.09 2000 6.66 -- j13.03 14.87+ j3.82 2005 6.52 -- j12.93 15.08 + j3.58 2010 6.37 -- j12.85 15.27 + j3.29 2015 6.22 -- j12.78 15.45 + j3.00 2020 6.08 -- j12.69 15.62 + j2.77 2025 5.94 -- j12.60 15.80 + j2.44 2030 5.80 -- j12.49 15.95 + j2.14 2035 5.65 -- j12.40 16.08 + j1.82 note: measured with peaking side open. z load = test circuit impedance as measured from drain to ground. z source = test circuit impedance as measured from gate to ground. figure 11. series equivalent source and load impedance ? carrier side z source z load input matching network device under test output matching network v dd =32vdc,i dqa = 150 ma, v gsb =1.5vdc,p out =10wavg. f mhz z source ? z load ? 1995 8.45 -- j12.85 5.83 -- j10.09 2000 8.28 -- j12.79 5.57 -- j10.11 2005 8.11 -- j12.70 5.32 -- j10.08 2010 7.95 -- j12.63 5.06 -- j10.07 2015 7.79 -- j12.56 4.80 -- j10.06 2020 7.63 -- j12.48 4.55 -- j10.01 2025 7.50 -- j12.40 4.32 -- j9.96 2030 7.34 -- j12.32 4.06 -- j9.88 2035 7.19 -- j12.24 3.82 -- j9.81 note: measured with carrier side open. z load = test circuit impedance as measured from drain to ground. z source = test circuit impedance as measured from gate to ground. figure 12. series equivalent source and load impedance ? peaking side z source z load input matching network device under test output matching network
mrf7p20040hr3 MRF7P20040HSR3 9 rf device data freescale semiconductor alternative peak tune load pull characteristics 25 p in , input power (dbm) v dd =32vdc,i dqa = 150 ma, pulsed cw 10 sec(on), 10% duty cycle 44 42 27 26 actual ideal 45 43 39 p out , output power (dbm) load pull test fixture tuned for peak p1db output power @ 32 v 46 47 48 49 24 23 22 17 21 18 f = 2025 mhz f = 2010 mhz 20 19 41 40 f = 2025 mhz f = 2010 mhz f (mhz) p1db p3db watts dbm watts dbm 2010 26 44.1 31 44.9 2025 26 44.2 31 44.9 test impedances per compression level f (mhz) z source ? z load ? 2010 p1db 2.49 -- j18.56 15.82 -- j0.28 2025 p1db 2.66 -- j19.78 15.78 + j0.52 figure 13. pulsed cw output power versus input power @ 32 v note: measurement made on the class ab, carrier side of the device.
10 rf device data freescale semiconductor mrf7p20040hr3 MRF7P20040HSR3 v dd =28vdc,i dqa = 150 ma f mhz max p out (1) z source ? z load ? watts dbm 1805 35 45.4 2.2 -- j9.3 17.1 -- j7.9 1880 35 45.5 2.3 -- j11.3 14.0 -- j4.2 1930 35 45.5 2.4 -- j13.0 14.7 -- j5.9 2025 35 45.5 3.5 -- j17.3 15.5 -- j8.0 2110 34 45.3 3.8 -- j20.6 15.4 -- j9.3 2200 35 45.5 5.6 -- j25.8 14.4 -- j9.4 (1) maximum output power measurement reflects pulsed 3 db gain compression. z source = test circuit impedance as measured from gate contact to ground. z load = test circuit impedance as measured from drain contact to ground. figure 14. carrier side load pull performance ? maximum p3db tuning z source z load input load pull tuner device under test output load pull tuner v dd =28vdc,i dqa = 150 ma f mhz max eff. (1) % z source ? z load ? 1805 66.6 2.2 -- j9.3 17.6 + j9.5 1880 70.1 2.3 -- j11.3 16.1 + j9.8 1930 69.8 2.4 -- j13.0 14.2 + j8.9 2025 67.7 3.5 -- j17.3 13.8 + j6.2 2110 67.9 3.8 -- j20.6 11.5 + j3.9 2200 70.3 5.6 -- j25.8 9.6 -- j0.6 (1) maximum efficiency measur ement reflects pulsed 3 db gain compression. z source = test circuit impedance as measured from gate contact to ground. z load = test circuit impedance as measured from drain contact to ground. figure 15. carrier side load pull performance ? maximum efficiency tuning z source z load device under test output load pull tuner input load pull tuner
mrf7p20040hr3 MRF7P20040HSR3 11 rf device data freescale semiconductor package dimensions
12 rf device data freescale semiconductor mrf7p20040hr3 MRF7P20040HSR3
mrf7p20040hr3 MRF7P20040HSR3 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor mrf7p20040hr3 MRF7P20040HSR3
mrf7p20040hr3 MRF7P20040HSR3 15 rf device data freescale semiconductor product documentation, tools and software refer to the following documents, tools and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. r5 tape and reel option r5 suffix = 50 units, 56 mm tape width, 13 inch reel. the r5 tape and reel option for mrf7p20040h and mrf7p20040hs parts will be available for 2 years after release of mrf7p20040h and mrf7p20040hs. freescale semiconductor, inc. reserves the right to limit the quantities that will be delivered in the r5 tape and reel option. at the end of the 2 year period customers who have purchased these devices in the r5 tape and reel option will be offered mrf7p20040h and mrf7p20040hs in the r3 tape and reel option. revision history the following table summarizes revisions to this document. revision date description 0 june 2009 ? initial release of data sheet 1 aug. 2009 ? removed iq magnitude clipping from typical per formance bullet, p. 1 and functional test header, p. 2 ? electrical characteristics, dc tests: updated footnote to indicate each side of device measured separately, p. 2 2 dec. 2010 ? updated frequency in overview paragraph from ?2010 to 2025 mhz? to ?1800 to 2200 mhz? per expanded load pull characterization shown in fig. 14, ca rrier side load pull performance ? maximum p3db tuning and fig. 15, carrier side load pull perf ormance ? maximum efficiency tuning, p. 1 ? added cw operation information to maximum ratings table, p. 1 ? in table 2, thermal characteristics, p out = 10 w cw thermal resistance values changed from i dqa 2.5/v gsb 2.9to2.11 _ c/w and p out = 40 w cw thermal resistance value changed from 2.3 to 1.50 _ c/w. thermal values now reflect the use of the combined dissipated power from the carrier amplifier and peaking amplifier, p. 1 ? added fig. 14, carrier side load pull performanc e ? maximum p3db tuning and fig. 15, carrier side load pull performance ? maximum efficiency t uning to show load pull data for expanded frequency range presented in p. 1 overview paragraph, p. 10
16 rf device data freescale semiconductor mrf7p20040hr3 MRF7P20040HSR3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2009--2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf7p20040h rev. 2, 12/2010

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