EIM7678-5 issued 08/11/2008 7.6 ? 7.8 gh z multi-stage power amplifier specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised august 2008 excelics rf in -5v vd1 rf out n/c vd2 gnd features ? 7.6? 7.8ghz operating frequency range ? 37.0dbm output power at 2db compression ? 31.0 db typical power gain @2db gain compression ? non-hermetic metal flange package applications ? point-to-point and point-to-multipoint radio ? military radar systems caution! esd sensitive device. electrical characteristics (tb = 25 c, 50 ohm, vd1=7v, vd2=10v, vgg=-5v) symbol parameter/test conditions min typ max units f operating frequency range 7.6 7.8 ghz p2db output power at 2db gain compression 36.0 37.0 dbm g2db gain @2db gain compression 29 31 db ? gain gain flatness 1.0 db input rl input return loss -12 -8 db output rl output return loss -15 -10 db vd1 drain supply voltage 1 7 v vd2 drain supply voltage 2 10 v i dq1 quiescent drain current 1 200 ma i dq2 quiescent drain current 2 2600 3000 ma vgg gate supply voltage -5 v rth thermal resistance 2.4 o c/w tb operating base plate temperature - 30 + 80 oc EIM7678-5
EIM7678-5 issued 08/11/2008 7.6 ? 7.8 gh z multi-stage power amplifier specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 2 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised august 2008 maximum ratings @25c 1,2 symbol characteristic absolute continuous 1,2 v d1 drain supply voltage 1 12v 8v v d2 drain supply voltage 2 14v 10v v gg gate supply voltage -10v -6 v i gg gate current 150ma 50 ma p in input power 20dbm @ pout 2db compression t ch channel temperature 175c 175c t stg storage temperature -65/175c -65/175c p t total power dissipation 37.5w 37.5w notes: 1. operating the device beyond any of t he above rating may reduce mttf and cause permanent damage. 2. bias conditions mu st also satisfy the following equation vdd*idd < (t ch ?tb)/r th package dimension and pin assignment .063 .157 .177 gnd .412 .206 .920 0.060x0.060 r0.063 (4 plcs) .120 min .020 .100 .004 .669 .827 -5v rf in vd1 n/c .105 .920 .412 excelics rf out vd2 dimensions are in inches * nc: no connection inside the package EIM7678-5
EIM7678-5 issued 08/11/2008 7.6 ? 7.8 gh z multi-stage power amplifier specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 3 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised august 2008 application note 1. the package should be screwed onto a good heat sink and ground 2. turn on/off sequence is required: ---to turn on: apply -5v first, then +7v and +10v. ---to turn off: turn +7v and +10v off first, then turn -5v off 3. recommended external bias circuit and internal block diagram 22uf 22uf nc rf out vd2 22uf 0.1uf 0.1uf 0.1uf gnd vgg vd1 rf in typical performance: p1db & g1db (@vds=10.0v, idsq=2700ma) p1db g1db 30 31 32 33 34 35 36 37 38 39 40 7.4 7.5 7.6 7.7 7.8 7.9 8 frequency (ghz) p1db(dbm) 30 31 32 33 34 35 36 37 38 39 40 p1db g1db
EIM7678-5 issued 08/11/2008 7.6 ? 7.8 gh z multi-stage power amplifier specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 4 of 4 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised august 2008 s-parameters ( vd1= 10v, i dq1 =2700ma, vd2= 7v, i dq2 =180ma) freq s11 s21 s12 s22 ghz mag ang mag ang mag ang mag ang 6.0 0.2739 -126.02 7.8680 157.28 0.0038 78.75 0.1621 -92.98 6.2 0.2135 -143.95 14.1273 65.93 0.0025 -121.90 0.1503 -121.39 6.4 0.1461 -152.50 23.4034 -28.46 0.0025 -128.06 0.1000 -153.57 6.6 0.1155 -139.22 35.9707 -127. 90 0.0027 -59.16 0.0534 -49.77 6.8 0.1449 -135.08 47.3280 129. 69 0.0017 45.82 0.1889 -85.17 7.0 0.1663 -148.04 53.8634 28.59 0.0033 45.58 0.2179 -128.72 7.2 0.1563 -151.11 53.5623 -69.47 0.0004 103.89 0.1500 -142.99 7.4 0.1880 -153.11 49.5049 -160.95 0.0017 -99.64 0.1878 -135.61 7.6 0.2437 -170.31 46.4079 112.81 0.0045 -20.74 0.2598 -156.35 7.8 0.2399 159.50 44.4597 23.45 0.0038 149.12 0.2348 171.42 8.0 0.1948 142.63 37.8991 -63.19 0.0029 158.82 0.1796 163.79 8.2 0.1805 138.04 32.6948 -142. 76 0.0029 24.78 0.1824 165.68 8.4 0.1789 127.05 31.7834 139.44 0.0068 59.47 0.2126 154.82 8.6 0.1849 110.83 33.6484 55.37 0.0014 23.03 0.2254 144.31 8.8 0.1373 85.62 34.7505 -39.89 0.0040 -81.51 0.2497 130.34 9.0 0.0932 91.29 29.2272 -139.08 0.0036 -81.65 0.2166 108.53 disclaimer excelics semiconductor reserves the right to make changes without further notice to any products herein to improve reliabil ity, function or design. excelics does not assume any liability arising ou t of the application or use of any produc t or circuit described herein. life support policy excelics semiconductor products are not authorized for use as critical components in life support devices or systems with out the express written approval of excelics semiconductor, inc. as here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perf orm when properly used in accordance with instructions for use provided in the labeling, can be reasonably expect ed to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support dev ice or system, or to affect its safety or effectiveness.
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