1994. 3. 23 1/1 semiconductor technical data KTA1658 epitaxial planar pnp transistor revision no : 0 general purpose application. features good linearity of h fe . complementary to ktc4369. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) note : h fe (1) classification o:70~140, y:120~240 characteristic symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current i c 3 a base current i b -0.3 a collector power dissipation (tc=25 1 ) p c 15 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-20v, i e =0 - - -1.0 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -1.0 a collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -30 - - v dc current gain h fe (1) (note) v ce =-2v, i c =-0.5a 70 - 240 h fe (2) v ce =-2v, i c =-2.5a 25 - - collector-emitter saturation voltage v ce(sat) i c =-2a, i b =-0.2a - -0.3 -0.8 v base-emitter voltage v be v ce =-2v, i c =-0.5a - -0.75 -1.0 v transition frequency f t v ce =-2v, i c =-0.5a - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 40 - pf
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