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  1/6 target data january 2003 STGW40NC60V n-channel 40a - 600v to-247 powermesh? igbt n high input impedance n low on-voltage drop (v cesat ) n off losses include tail current n low gate charge n high current capability n very high frequency operation applications n high frequency inverters n smps and pfc in both hard switch and resonant topologies n ups n welding absolute maximum ratings (  )pulse width limited by safe operating area type v ces v ce(sat) i c STGW40NC60V 600 v < 2.5 v40a symbol parameter value unit v ces collector-emitter voltage (v gs =0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c =25c 80 a i c collector current (continuous) at t c =100c 40 a i cm (  ) collector current (pulsed) 300 a p tot total dissipation at t c = 25c tbd w derating factor tbd w/c t stg storage temperature C 55 to 150 c t j max. operating junction temperature 150 c to-247 1 2 3 internal schematic diagram
STGW40NC60V 2/6 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (1) dynamic switching on rthj-case thermal resistance junction-case max 1.04 c/w rthj-amb thermal resistance junction-ambient max 30 c/w rthc-sink thermal resistance case-sink typ 0.1 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250 a, v ge = 0 600 v i ces collector cut-off (v ge =0) v ce = max rating, t c =25c 250 a v ce = max rating, t c = 125 c tbd a i ges gate-emitter leakage current (v ce =0) v ge =20v,v ce = 0 250 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250 a 345v v ce(sat) collector-emitter saturation voltage v ge =15v,i c =40a,tj=25c 1.92 2.5 v v ge =15 v, i c = 40 a, tj =125c 1.7 v symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25v , i c =40a tbd s c ies input capacitance v ce = 25 v, f= 1 mhz, v ge =0 4500 pf c oes output capacitance 350 pf c res reverse transfer capacitance 100 pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v, i c =40a, v ge =15v tbd tbd tbd nc nc nc i cl latching current v clamp = 480 v , tj = 150c r g =10 w tbd a symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v cc =480v,i c =40a r g =10 w ,v ge =15v tbd tbd ns ns (di/dt) on eon turn-on current slope turn-on switching losses v cc = 480 v, i c =40a r g =5 w, v ge =15v, tj =125c 2100 810 a/s j
3/6 STGW40NC60V electrical characteristics (continued) switching off note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) symbol parameter test conditions min. typ. max. unit t r (v off ) off voltage rise time v cc = 480 v, i c =40a, r ge =5 w ,v ge =15v t j =25c 28 ns t d ( off ) delay time 170 ns t f fall time 65 ns e off (**) turn-off switching loss 940 m j e ts total switching loss 1750 m j t r (v off ) off voltage rise time v cc = 480 v, i c =40a, r ge =5 w ,v ge =15v tj = 125 c 54 ns t d ( off ) delay time 210 ns t f fall time 90 ns e off (**) turn-off switching loss 1400 m j e ts total switching loss 2200 m j
STGW40NC60V 4/6 fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
5/6 STGW40NC60V dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 d 2.20 2.60 0.08 0.10 e 0.40 0.80 0.015 0.03 f 1 1.40 0.04 0.05 f1 3 0.11 f2 2 0.07 f3 2 2.40 0.07 0.09 f4 3 3.40 0.11 0.13 g 10.90 0.43 h 15.45 15.75 0.60 0.62 l 19.85 20.15 0.78 0.79 l1 3.70 4.30 0.14 0.17 l2 18.50 0.72 l3 14.20 14.80 0.56 0.58 l4 34.60 1.36 l5 5.50 0.21 m 2 3 0.07 0.11 v 5o 5o v2 60o 60o dia 3.55 3.65 0.14 0.143 to-247 mechanical data
STGW40NC60V 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com


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