vishay siliconix dg2747, dg2748, dg2749 document number: 69977 s09-0396-rev. b, 09-mar-09 www.vishay.com 1 0.4- , low voltage, dual spst analog switch description the dg2747, dg2748, and dg 2749 are high performance, low on-resistance analog switches of dual spst configuration. built on vishay siliconix's su b-micro cmos technology, the dg2747, dg2748, dg2749 achiev e switch on-resistance of 0.4 at 2.7 v v+ and 0.3 at 4.3 v v+. it provides 0.1 flatness at 2.7 v v+, and total harmonic distortion to 0.03 % (frequency range 20 hz to 20 khz). it achieves - 72 db off-isolation and - 100 db crosstalk at 100 khz. its - 3 db bandwidth is up to 93 mhz. it can switch signals with amplitudes of up to v cc to be transmitted in either direction. the select pins of the control logic can tolerate voltages above v+. logic high is 1.4 v to make it compatible with many low voltage digital control circuits. combining wide operation voltage, low power, high speed, low on-resistance and small physical size, the dg2747, dg2748, dg2749 are ideal for portable and battery powered applications requiring high performance and efficient use of board space. the dg2747, dg2748, dg2749 come in a small miniqfn-8 lead package (1.4 x 1.4 x 0. 55 mm). as a committed partner to the community and the environment, vishay siliconix manufactures this product with the lead (pb)-free device terminations and is 100 % rohs compliant. features ? wide operation voltage range: 1.6 v to 4.3 v ? low on-resistance: 0.4 typ. at 2.7 v ? low voltage logic threshold: v th(high) = 1.4 v at v+ = 3 v ? - 100 db crosstalk at 100 khz ? > 250 ma latch up current per jesd78 ? switch exceeds 7 kv esd/hbm benefits ? ultra small miniqfn8 package of 1.4 x 1.4 x 0.55 mm ? high fidelity audio switch ? reed relay replacement ? low power consumption applications ? cellular phones ? portable media player ?gps ? pcmcia cards ? medical and test equipment functional block diagram and pin configuration pin 1 de v ice marking: dx for dg2747 x = date/lot tracea b ility code dx (top v ie w ) dg2747 miniqfn- 8 l top v ie w 2 6 8 4 1 3 7 5 g n d v + i n 1 i n 2 n o 2 com 1 n o 1 pin 1 de v ice marking: fx for dg2749 x = date/lot tracea b ility code fx (top v ie w ) dg2749 miniqfn- 8 l top v ie w 2 6 8 4 1 3 7 5 v + n c 1 com 1 i n 1 i n 2 com 2 n c 2 g n d pin 1 de v ice marking: ex for dg274 8 x = date/lot tracea b ility code ex (top v ie w ) 2 6 8 4 1 3 7 5 g n d v + n c 1 n c 2 i n 1 dg274 8 miniqfn-8l i n 2 top v ie w com 1 com 2 com 2 rohs compliant
www.vishay.com 2 document number: 69977 s09-0396-rev. b, 09-mar-09 vishay siliconix dg2747, dg2748, dg2749 notes: a. signals on nc, no, or com or in exceeding v+ will be clamped by inte rnal diodes. limit forward diode current to maximum curr ent ratings. b. all leads welded or soldered to pc board. c. derate 2.4 mw/c above 70 c. truth table logic dg2747 dg2748 dg2749 com 1 and no 1 com 2 and no 2 com 1 and nc 1 com 2 and nc 2 com 1 and nc 1 com 2 and no 2 low off off on on on off high on on off off off on ordering information temp. range package part number - 40 c to 85c miniqfn-8l DG2747DN-T1-E4 dg2748dn-t1-e4 dg2749dn-t1-e4 absolute maximum ratings t a = 25 c, unless otherwise noted parameter limit unit reference to gnd v+ - 0.3 to 5.0 v in, com, nc, no a - 0.3 to (v+ + 0.3) current (any terminal except no, nc or com) 30 ma continuous current (no, nc, or com) 300 peak current (pulsed at 1 ms, 10 % duty cycle) 500 storage temperature (d suffix) - 65 to 150 c power dissipation (packages) b miniqfn-8l c 190 mw
document number: 69977 s09-0396-rev. b, 09-mar-09 www.vishay.com 3 vishay siliconix dg2747, dg2748, dg2749 notes: a. room = 25 c, full = as determined by the operating suffix. b. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guarantee by design, not subjected to production test. e. v in = input voltage to perform proper function. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications v+ = 3 v parameter symbol test conditions unless otherwise specified v+ = 3 v, 10 %,v in = 0.4 v or 1.4 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v analog r ds(on) full 0 v+ v on-resistance r ds(on) v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v room 0.4 0.6 v+ = 2.7 v, i no/nc = 100 ma, v com = 1.5 v v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v full 0.7 v+ = 2.7 v, i no/nc = 100 ma, v com = 1.5 v r on match d r on v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v, 1.5 v room 0.03 r on resistance flatness d r on flatness v+ = 2.7 v, i no/nc = 100 ma, v com = 0.5 v, 1.5 v room 0.1 0.2 switch off leakage current i no/nc(off) v+ = 4.3 v, v no/nc = 1.0 v/3.3 v, v com = 3.3 v/1.0 v room - 2 2 na full - 10 10 i com(off) room - 2 2 full - 10 10 channel-on leakage current i com(on) v+ = 4.3 v, v no/nc = v com = 3.3 v/1.0 v room full - 2 2 - 10 10 digital control input high voltage v inh full 1.4 v input low voltage v inl full 0.4 input current i inl or i inh v in = 0 or v+ full - 1 1 a dynamic characteristics tu r n - o n t i m e e t on v+ = 2.7 v to 3.6 v, v no or v nc = 1.5 v, r l = 50 , c l = 35 pf room 14 25 ns full 27 turn-off time e t off room 12 25 full 27 charge injection d q c l = 1 nf, r gen = 0 , v gen = 0 v room 10 pc off-isolation d o irr r l = 50 , c l = 5 pf, f = 1 mhz room - 52 db r l = 50 , c l = 5 pf, f = 100 khz - 72 crosstalk d x ta l k r l = 50 , c l = 5 pf, f = 1 mhz - 90 r l = 50 , c l = 5 pf, f = 100 khz - 100 3 db bandwidth d r l = 50 , c l = 5 pf room 93 mhz source off capacitance d c nx(off) f = 1 mhz, v nx = 0 v room 75 pf drain off capacitance d c com(off) f = 1 mhz, v com = 0 v room 55 drain on capacitance d c com(on) f = 1 mhz, v com = v nx = 0 v room 100 total harmonic distortion d thd v+ = 2.7 v to 3.6 v, v in = 0.5 vp-p f = 20 hz to 20 khz room 0.03 % power supply power supply range v+ 1.6 4.3 v power supply current i+ v in = 0 or v+ full 1.0 a
www.vishay.com 4 document number: 69977 s09-0396-rev. b, 09-mar-09 vishay siliconix dg2747, dg2748, dg2749 typical characteristics t a = 25 c, unless otherwise noted r ds(on) vs. v d and supply voltage supply current vs. temperature leakage vs. analog voltage v com ( v d ) - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r ds(on) 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 012345 v + = 2.7 v v + = 3 v v + = 3.6 v v + = 4.3 v v + = 1.6 v t a = 25 c temperat u re (c) s u pply c u rrent (na) - + i 0 0.1 1.0 10 100 - 40 - 20 0 20 40 60 8 0100 v + = 4.3 v v com - analog v oltage ( v ) ) a p ( t n e r r u c e g a k a e l - 2500 - 2000 - 1500 - 1000 - 500 0 500 1000 1500 01234 v + = 4.3 v i n o(off) i com(off) i com(on) 0.5 1.5 2.5 3.5 4.5 r ds(on) vs. v d and temperature leakage current vs. temperature charge injection vs. analog voltage v com ( v d ) - analog v oltage ( v ) ( ) e c n a t s i s e r - n o - r ds(on) 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 + 8 5 c + 25 c - 40 c v + = 2.7 v temperat u re (c) ) a p ( t n e r r u c e g a k a e l 1 10 100 1000 10000 - 40 - 20 0 20 40 60 8 0 100 i com(off) i n o(off) i com(on) v + = 4.3 v 0 2 4 6 8 10 12 14 16 1 8 0 0.5 1 1.5 2 2.5 3 3.5 4 analog v oltage ( v ) q - charge injection (pc) c l = 1 nf drain v + = 3.6 v v + = 3 v v + = 2.7 v
vishay siliconix dg2747, dg2748, dg2749 document number: 69977 s09-0396-rev. b, 09-mar-09 www.vishay.com 5 typical characteristics t a = 25 c, unless otherwise noted switching time vs. temperature switching threshold vs. supply voltage temperat u re (c) t o n , t off - s w itching time (ns) 6 8 10 12 14 16 1 8 - 40 - 20 0 20 40 60 8 0 t o n v + = 2.7 v t off v + = 3.6 v t off v + = 2.7 v t o n v + = 3.6 v 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v + - s u pply v oltage ( v ) v t - s w itching threshold ( v ) - 40 c to 8 5 c insertion loss vs. frequency off-isolation and crosstalk vs. frequency fre qu ency (hz) loss (db) - 9 - 8 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 1 100k 1m 10m 100m 1g - 10 v + = 3 v r l = 50 fre qu ency (hz) loss, oirr, x talk (db) - 110 - 100 - 90 - 8 0 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 oirr x talk 100k 1m 10m 100m 1g v + = 3 v r l = 50
www.vishay.com 6 document number: 69977 s09-0396-rev. b, 09-mar-09 vishay siliconix dg2747, dg2748, dg2749 test circuits figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ in no or nc c l 35 pf com logic input r l 50 v out gnd v+ 50 % 0 v logic input switch output t on t off logic "1" = switch on logic input waveforms inverted for switches that have the opposite logic sense. 0 v switch output v out v com r l r l r on 0.9 x v out t r 5 ns t f 5 ns v inh v inl = + < < ( ) figure 2. break-before-make (dg2749) v i n l logic inp u t s w itch s w itch o u tp u t v i n h 50 % 0 v o u tp u t 0 v 90 % v o1 v o2 90 % v n o2 v n c1 t d t d v o1 c l (incl u des fixt u re and stray capacitance) v + n c 1 n o 2 v n c1 i n 1 com 1 v n o2 r l1 50 com 2 v o2 c l1 35 pf g n d r l2 50 c l2 35 pf i n 2 v + figure 3. charge injection c l 1 nf com r g v o v + n c or n o v i n = 0 - v + i n v g g n d v + off o n off off o n off v o v o i n x i n x q = v o x c l
vishay siliconix dg2747, dg2748, dg2749 document number: 69977 s09-0396-rev. b, 09-mar-09 www.vishay.com 7 test circuits vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69977 . figure 4. off-isolation in gnd nc or no 0 v, v+ com off isolation 20 log v com v no / nc r l analyzer v+ v+ = figure 5. crosstalk 0 v , v + n o 1 or n c 1 x talk isolation = 20 log v o v s com 2 c = rf b ypass r l com 1 n o 2 or n c 2 v s 0 v , v + i n 1 50 v o i n 2 r g = 50 v + g n d v + c figure 6. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, v+ meter hp4192a impedance analyzer or equivalent v+ v+
document number: 68674 www.vishay.com revision: 05-may-08 1 package information vishay siliconix miniqfn-8l case outline d e a c a1 a 1 2 4 7 6 8 3 5 b e l 1 2 3 4 7 6 5 8 l ll millimeters inches dim min. nom. max. min. nom. max. a 0.50 0.55 0.60 0.0197 0.0217 0.0236 a1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.15 ref 0.006 ref d 1.35 1.40 1.45 0.053 0.055 0.057 e 1.35 1.40 1.45 0.053 0.055 0.057 e 0.40 bsc 0.016 bsc l 0.35 0.40 0.45 0.014 0.016 0.018 ecn: c-08336-rev. a, 05-may-08 dwg: 5964
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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