inchange semiconductor isc product specification isc silicon npn power transistor MJ6308 description 700v collector-base breakdown capability excellent dynamic saturation characteristics fast swithing low saturation voltage advanced technology repl acement for the 2n6308 applications designed in circuits requiring good dynamio saturation characteristics in swithi ng powe r supply applications and other inductive swithing circuits. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 700 v v ces collector-emitter sustaining voltage 380 v v ebo emitter-base voltage 10 v i c collector current-continuous 8 a i b b base current-continuous 4 a p c collector power dissipation@t c =25 140 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJ6308 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = 10ma; i b = 0 380 v v (br)ebo emitter-collector breakdown voltage i e = 1.0ma; i c = 0 10 v v ce (sat)-1 collector-emitter saturation voltage i c =3a; i b = 0.4a 1 v v ce (sat)-2 collector-emitter saturation voltage i c = 6a; i b = 1a b 1 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1a b 1.5 v i ces collector cutoff current v ce =700v; v be =0v v ce =700v; v be =0v, tc=100 0.1 1.5 ma i ebo emitter cutoff current v eb =10v; i c = 0 10 a h fe dc current gain i c = 8a; v ce =5v 5 20 c ob output capacitance v ce =10v; i e = 0; f test =1.0khz 100 pf isc website www.iscsemi.cn
|
