npn silicon planar medium power transistor issue 1 ? sept 93 features * 30 volt v ceo * 1 amp continuous current *p tot = 1 watt refer to ztx449 for graphs absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a power dissipation at t amb =25c p tot 1w operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 50 v i c =100 m a, i e =0 collector-emitter breakdown voltage v (br)ceo 30 v i c =10ma, i b =0* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a, i c =0 collector cut-off current i cbo 0.1 10 m a m a v cb =40v v cb =40v, t amb =100c emitter cut-off current i ebo 0.1 m a v eb =4v, i c =0 collector-emitter saturation voltage v ce(sat) 0.5 1 v v i c =1a, i b =100ma* i c =2a, i b =200ma* base-emitter saturation voltage v be(sat) 1.25 v i c =1a, i b =100ma* base-emitter turn-on voltage v be(on) 1vic=1a,v ce =2v* static forward current transfer ratio h fe 70 100 80 40 300 i c =50ma, v ce =2v* i c =500ma, v ce =2v* i c =1a, v ce =2v* i c =2a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 15 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% e-line to92 compatible FXT449 3-30 b c e
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