|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
issue 5 - january 2007 1 www.zetex.com ? zetex semiconductors plc 2007 zxmn6a09k 60v n-channel enhancement mode mosfet in dpak summary v (br)dss =60v : r ds(on) =0.040 ; i d =12.2a description this new generation of trench mo sfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? dpak (t0-252) package applications ? dc-dc converters ? power management functions ? disconnect switches ? motor control ordering information device marking zxmn 6a09k device reel size (inches) tape width (mm) quantity per reel zxmn6a09ktc 13 16 2500 d s g gs d d pinout - top view
zxmn6a09k issue 5 - january 2007 2 www.zetex.com ? zetex semiconductors plc 2007 absolute maximum ratings notes: (a) for a device surface mounted on 50mm x 50mm x 1.6mm fr 4 pcb with high coverage of single sided 2oz copper, in still air conditions. (b) for a device surface mounted on fr4 pcb measured at t 10 sec. (c) repetitive rating 50mm x 50mm x 1.6mm fr4 pcb, d=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d) for a device surface mounted on 25mm x 25mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. parameter symbol limit unit drain-source voltage v dss 60 v gate-source voltage v gs 20 v continuous drain current @ v gs =10v; t amb =25c (b) i d 12.2 a @ v gs =10v; t amb =70c (b) 9.8 @ v gs =10v; t amb =25c (a) 7.9 pulsed drain current (c) i dm 43 a continuous source current (body diode) (b) i s 10.8 a pulsed source current (body diode) (c) i sm 43 a power dissipation at t amb =25c (a) p d 4.3 w linear derating factor 34.4 mw/c power dissipation at t amb =25c (a) p d 10.1 w linear derating factor 80.8 mw/c power dissipation at t amb =25c (a) p d 2.15 w linear derating factor 17.2 mw/c operating and storage temperature range t j , t stg -55 to +150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 29 c/w junction to ambient (b) r ja 12.3 c/w junction to ambient (d) r ja 58.1 c/w zxmn6a09k issue 5 - january 2007 3 www.zetex.com ? zetex semiconductors plc 2007 characteristics zxmn6a09k issue 5 - january 2007 4 www.zetex.com ? zetex semiconductors plc 2007 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions static drain-source breakdown voltage v (br)dss 60 v i d = 250 a, v gs =0v zero gate voltage drain current i dss 1 av ds = 60v, v gs =0v gate-body leakage i gss 100 na v gs =20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 3.0 v i d = 250 a, v ds =v gs static drain-source on-state resistance (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. r ds(on) 0.040 v gs = 10v, i d = 7.3a 0.060 v gs = 4.5v, i d = 5.6a forward transconductance (*)(?) g fs 15 s v ds = 15v, i d = 7.3a dynamic (?) input capacitance c iss 1426 pf v ds = 30v, v gs =0v f=1mhz output capacitance c oss 134 pf reverse transfer capacitance c rss 64 pf switching (?) (?) (?) switching characteristics are independ ent of operating junction temperature. (?) for design aid only, not subject to production testing. turn-on-delay time t d(on) 4.8 ns v dd = 30v, i d = 1a r g ? 6.0 , v gs = 10v (refer to test circuit) rise time t r 4.6 ns turn-off delay time t d(off) 32.5 ns fall time t f 14.5 ns total gate charge q g 15 nc v ds = 30v, v gs = 4.5v i d = 5.6a total gate charge q g 29 nc v ds = 30v, v gs = 10v i d = 7.3a gate-source charge q gs 7.0 nc gate drain charge q gd 4.7 nc source-drain diode diode forward voltage (*) v sd 0.85 0.95 v t j =25c, i s = 6.6a, v gs =0v reverse recovery time (?) t rr 25.6 ns t j =25c, i s = 3a, di/dt=100a/ s reverse recovery charge (?) q rr 26.0 nc zxmn6a09k issue 5 - january 2007 5 www.zetex.com ? zetex semiconductors plc 2007 typical characteristics zxmn6a09k issue 5 - january 2007 6 www.zetex.com ? zetex semiconductors plc 2007 typical characteristics current regulator charge gate charge test circuit switching time test circuit basic gate charge waveform switching time waveforms d.u.t 50k 12v same as d.u.t v gs v gs v ds v g q gs q gd q g v gs 90% 10% t (on) t (on) t d(on) t r t r t d(off) v ds v cc r d r g v ds i d i g zxmn6a09k issue 5 - january 2007 7 www.zetex.com ? zetex semiconductors plc 2007 package outline - dpak note: controlling dimensions are in inches. approx imate dimensions are provided in millimeters dim inches millimeters dim inches millimeters min max min max min max min max a 0.086 0.094 2.18 2.39 e 0.090 bsc 2.29 bsc a1 - 0.005 - 0.127 h 0.370 0.410 9.40 10.41 b 0.020 0.035 0.508 0.89 l 0.055 0.070 1.40 1.78 b2 0.030 0.045 0.762 1.14 l1 0.108 ref 2.74 ref b3 0.205 0.215 5.21 5.46 l2 0.020 bsc 0.508 bsc c 0.018 0.024 0.457 0.61 l3 0.035 0.065 0.89 1.65 c2 0.018 0.023 0.457 0.584 l4 0.025 0.040 0.635 1.016 d 0.213 0.245 5.41 6.22 l5 0.045 0.060 1.14 1.52 d1 0.205 - 5.21 - 1 0 10 0 10 e 0.250 0.265 6.35 6.73 0 15 0 15 e10.170-4.32------ zxmn6a09k issue 5 - january 2007 8 www.zetex.com ? zetex semiconductors plc 2007 zetex sales offices europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com ? 2007 published by zetex semiconductors plc definitions product change zetex semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. customers are solely responsible for obtaining th e latest relevant information before placing orders. applications disclaimer the circuits in this design/application note are offered as desi gn ideas. it is the responsibility of the user to ensure that t he circuit is fit for the user?s application and meets with the user?s requirements. no representation or warranty is given and no liability whatsoev er is assumed by zetex with respect to the accuracy or use of such in formation, or infringement of patents or other intellectual prop erty rights arising from such use or otherwise. zetex does not assume any le gal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restricti on or otherwise) for any damages, loss of profit, business, con tract, opportunity or consequential loss in the use of th ese circuit applications, under any circumstances. life support zetex products are specifically not authorized for use as critic al components in life support devices or systems without the ex press written approval of the chief executive officer of zetex semiconductors plc. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in t he labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devi ce or system whose failure to pe rform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. reproduction the product specifications contained in this publication are issu ed to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the pr oducts or services concerned. terms and conditions all products are sold subjects to zetex? terms and conditions of sale, and this disclaimer (save in the event of a conflict bet ween the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. for the latest information on technology, delivery terms and condi tions and prices, please contact your nearest zetex sales off ice. quality of product zetex is an iso 9001 and ts16949 certified semiconductor manufacturer. to ensure quality of service and products we strongly advise the purchase of parts dire ctly from zetex semiconductors or one of our regionally authorized distributors. for a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork zetex semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. esd (electrostatic discharge) semiconductor devices are susceptible to damage by esd. suitab le precautions should be taken when handling and transporting dev ices. the possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. the extent of damage can vary from immediate functional or parametric malfunc tion to degradation of function or performance in use over ti me. devices suspected of being affected should be replaced. green compliance zetex semiconductors is committed to environ mental excellence in all aspects of its op erations which includes meeting or exceed ing reg- ulatory requirements with respect to the use of hazardous substances. numerous successful programs have been implemented to red uce the use of hazardous substances and/or emissions. all zetex components are compliant with the ro hs directive, and through this it is supporting its customers in their compliance with weee and elv directives. product status key: ?preview? future device intended for production at some point. samples may be available ?active? product status recommended for new designs ?last time buy (ltb)? device will be discontinued and last time buy period and delivery is in effect ?not recommended for new designs? device is still in production to support existing designs and production ?obsolete? production ha s been discontinued datasheet status key: ?draft version? this term denotes a very early datasheet ver sion and contains highly provisional information, which may change in any manner without notice. ?provisional version? this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specif ications may occur, at any time and without notice. ?issue? this term denotes an issued datasheet cont aining finalized specifications. however, changes to specifications may occur, at any time and without notice. |
Price & Availability of ZXMN6A09K07 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |