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| process CP753V small signal transistors pnp - high current transistor chip princip al device types czt953 process epitaxial planar die size 66 x 66 mils die thickness 7.1 mils base bonding pad area 7.9 x 7.9 mils emitter 1 bonding pad area 7.9 x 9.5 mils emitter 2 bonding pad area 7.9 x 9.5 mils top side metalization al-si 30,000? back side metalization au 12,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry r0 (23- september 2005) gross dier per 5 inch w afer 3,878
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